【摘要】：介紹了邏輯電路IC芯片的兩項(xiàng)重要參數(shù)(性能和功耗)與芯片的通用電源短路測(cè)試參數(shù)之間的強(qiáng)相關(guān)性。從而在IC芯片的量產(chǎn)階段,利用晶圓測(cè)試階段的通用電源短路參數(shù)進(jìn)行分類的方法,來(lái)區(qū)分出不同性能和功耗規(guī)格要求的產(chǎn)品。在此基礎(chǔ)上,根據(jù)通用電源短路參數(shù)的不同分類,在芯片內(nèi)部的電熔絲里燒錄不同的電壓標(biāo)識(shí),使得芯片可以在系統(tǒng)上啟動(dòng)BIOS時(shí)通過(guò)讀取該電壓標(biāo)識(shí)來(lái)決定運(yùn)行芯片的電壓大小,從而有助于優(yōu)化產(chǎn)品的性能與功耗分布,進(jìn)而提高產(chǎn)品的規(guī)格。
[Abstract]:This paper introduces the strong correlation between two important parameters (performance and power consumption) of logic circuit IC chip and the general power supply short circuit test parameters of the chip. Therefore, in the mass production stage of IC chip, the general power short circuit parameters of wafer test stage are used to classify the products with different performance and power consumption specifications. On this basis, according to the different classification of short circuit parameters of general power supply, different voltage marks are burned in the electric fuse inside the chip. So that the chip can determine the voltage of the running chip by reading the voltage identification when the BIOS is started on the system, which is helpful to optimize the performance and power consumption distribution of the product, and then improve the specification of the product.
【作者單位】： 上海兆芯集成電路有限公司;
【分類號(hào)】：TN407
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本文編號(hào)：2485901