微納結(jié)構(gòu)硅的制備及器件化應(yīng)用研究
發(fā)布時(shí)間：2019-04-27 21:57
【摘要】：硅是極為常見(jiàn)的一種元素,然而它極少以單質(zhì)形式在自然界出現(xiàn),而是以復(fù)雜的硅酸鹽或二氧化硅的形式,廣泛存在于巖石、砂礫、塵土之中。硅的含量巨大且提純難度不高,以硅為基礎(chǔ)的半導(dǎo)體器件成為主流半導(dǎo)體器件。光探測(cè)及光伏領(lǐng)域?qū)t外和可見(jiàn)光波段的吸收有較高要求,而單晶硅擁有較大的禁帶寬度,無(wú)法高效吸收這些波段的光�；衔锇雽�(dǎo)體材料雖然能在一定程度解決這個(gè)問(wèn)題,但成本高昂限制了它們的廣泛應(yīng)用�？茖W(xué)家們不得不在硅材料本身尋求新的解決辦法�！昂诠琛笔峭ㄟ^(guò)飛秒激光刻蝕等得到的在硅材料表面具有均勻細(xì)小尖錐微結(jié)構(gòu)的一類(lèi)材料,能夠提高硅對(duì)光的吸收能力、延伸光譜探測(cè)范圍,在可見(jiàn)及近紅外波段有非常不錯(cuò)的表現(xiàn)。本文采用光催化電化學(xué)腐蝕工藝制備多孔硅,制備出了具有微米尺度的表面微結(jié)構(gòu)硅。創(chuàng)新性地提出了“納米多孔硅”的設(shè)想,利用電化學(xué)與金屬催化化學(xué)相結(jié)合的刻蝕工藝,成功制備出了“納米多孔硅”這種微結(jié)構(gòu)硅材料�；趯�(duì)微結(jié)構(gòu)硅金半接觸及器件制備的研究需要,基于微結(jié)構(gòu)硅材料進(jìn)行了電極制備及PIN原理性器件試制。研究表明,電化學(xué)腐蝕與金屬催化刻蝕結(jié)合制備“納米多孔硅”的設(shè)想具有可行性,制備出的“納米多孔硅”具有良好的光學(xué)性能,基于微結(jié)構(gòu)硅制備的PIN單元原理性器件,在近紅外波段的響應(yīng)度較高,這對(duì)改善硅基PIN探測(cè)器的性能具有重要意義。論文取得的主要研究成果如下:1)基于光催化電化學(xué)腐蝕工藝制備得到的多孔硅,具有大面積均勻性和良好的微米尺度表面微結(jié)構(gòu),在300 nm~1100 nm波段范圍內(nèi)光吸收率明顯增強(qiáng);2)利用“銀鏡反應(yīng)”能夠獲得均勻的催化銀粒子分布,既可以一步法制備納米尺度微結(jié)構(gòu)硅,還可以結(jié)合電化學(xué)與金屬催化刻蝕工藝,制備得到“納米多孔硅”材料,具有顯著的光吸收特性,在可見(jiàn)光與近紅外波段的吸收率達(dá)85%以上;3)用化學(xué)鍍方法在微結(jié)構(gòu)硅上制備金屬電極,具有良好的電接觸質(zhì)量;基于微結(jié)構(gòu)硅的Si-PIN光電探測(cè)原理性器件,在近紅外波段表現(xiàn)出良好的響應(yīng)特性。
[Abstract]:Silicon is a very common element, but it rarely appears in nature in the form of simple substance, but in the form of complex silicate or silica, it is widely found in rocks, gravel and dust. Silicon-based semiconductor devices have become the mainstream semiconductor devices because the silicon content is huge and the purification difficulty is not high. In the field of optical detection and photovoltaic, the absorption of near infrared and visible wavelengths is high, while monocrystalline silicon has a large band gap, so it is impossible to absorb the light in these bands efficiently. Compound semiconductor materials can solve this problem to a certain extent, but the high cost limits their wide application. Scientists have to find new solutions in the silicon material itself. "Black silicon" is a kind of materials with uniform and fine tapered microstructure on the surface of silicon materials obtained by femtosecond laser etching, which can improve the absorption ability of silicon to light and extend the detection range of spectrum. Very good performance in visible and near infrared bands. In this paper, porous silicon was prepared by photocatalysis electrochemical etching process, and the surface microstructure silicon with micrometer scale was prepared. The idea of "nano-porous silicon" was put forward creatively, and "nano-porous silicon" was successfully prepared by electrochemical etching process combined with metal catalytic chemistry. Based on the need of research on semi-contact of microstructure silicon and fabrication of devices, electrode preparation and PIN principle device fabrication were carried out based on micro-structure silicon material. The results show that it is feasible to fabricate "nano-porous silicon" by electrochemical etching combined with metal catalytic etching. The "nano-porous silicon" prepared by electrochemical etching has good optical properties. The PIN unit principle device based on microstructure silicon is fabricated. The high responsivity in near infrared band is very important to improve the performance of silicon-based PIN detector. The main results obtained in this thesis are as follows: 1) the porous silicon prepared by photocatalysis electrochemical etching has a large area uniformity and a good micro-scale surface microstructure, and the optical absorptivity is obviously enhanced in the range of 300 nm~1100 nm. 2) the uniform distribution of catalytic silver particles can be obtained by "silver mirror reaction", which not only can be used to prepare nano-scale microstructure silicon by one-step method, but also "nano-porous silicon" material can be prepared by combining electrochemistry and metal catalytic etching process, and "nano-porous silicon" can be prepared by electrochemistry and metal catalytic etching. The absorption rate is over 85% in visible and near infrared bands. 3) Electroless deposition of metal electrode on microstructure silicon has good electrical contact quality, and Si-PIN photoelectric detector based on microstructure silicon has good response characteristics in near infrared band.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN303
[Abstract]:Silicon is a very common element, but it rarely appears in nature in the form of simple substance, but in the form of complex silicate or silica, it is widely found in rocks, gravel and dust. Silicon-based semiconductor devices have become the mainstream semiconductor devices because the silicon content is huge and the purification difficulty is not high. In the field of optical detection and photovoltaic, the absorption of near infrared and visible wavelengths is high, while monocrystalline silicon has a large band gap, so it is impossible to absorb the light in these bands efficiently. Compound semiconductor materials can solve this problem to a certain extent, but the high cost limits their wide application. Scientists have to find new solutions in the silicon material itself. "Black silicon" is a kind of materials with uniform and fine tapered microstructure on the surface of silicon materials obtained by femtosecond laser etching, which can improve the absorption ability of silicon to light and extend the detection range of spectrum. Very good performance in visible and near infrared bands. In this paper, porous silicon was prepared by photocatalysis electrochemical etching process, and the surface microstructure silicon with micrometer scale was prepared. The idea of "nano-porous silicon" was put forward creatively, and "nano-porous silicon" was successfully prepared by electrochemical etching process combined with metal catalytic chemistry. Based on the need of research on semi-contact of microstructure silicon and fabrication of devices, electrode preparation and PIN principle device fabrication were carried out based on micro-structure silicon material. The results show that it is feasible to fabricate "nano-porous silicon" by electrochemical etching combined with metal catalytic etching. The "nano-porous silicon" prepared by electrochemical etching has good optical properties. The PIN unit principle device based on microstructure silicon is fabricated. The high responsivity in near infrared band is very important to improve the performance of silicon-based PIN detector. The main results obtained in this thesis are as follows: 1) the porous silicon prepared by photocatalysis electrochemical etching has a large area uniformity and a good micro-scale surface microstructure, and the optical absorptivity is obviously enhanced in the range of 300 nm~1100 nm. 2) the uniform distribution of catalytic silver particles can be obtained by "silver mirror reaction", which not only can be used to prepare nano-scale microstructure silicon by one-step method, but also "nano-porous silicon" material can be prepared by combining electrochemistry and metal catalytic etching process, and "nano-porous silicon" can be prepared by electrochemistry and metal catalytic etching. The absorption rate is over 85% in visible and near infrared bands. 3) Electroless deposition of metal electrode on microstructure silicon has good electrical contact quality, and Si-PIN photoelectric detector based on microstructure silicon has good response characteristics in near infrared band.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN303
【參考文獻(xiàn)】
相關(guān)期刊論文 前1條
1 林軍，張麗珠，陳志堅(jiān)，宋海智，姚德成，段家_錚�，笇�(dǎo)檬�，张伯儒P毓
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