【摘要】：微波固態(tài)功率放大器被廣泛應(yīng)用在電子對(duì)抗、衛(wèi)星通信、移動(dòng)通信、導(dǎo)航、電子對(duì)抗、雷達(dá)系統(tǒng)以及各種電子裝備中。它具有工作電壓低、噪聲低、效率高和線性度好以及尺寸小等特點(diǎn)。當(dāng)前隨著微波通信和軍事領(lǐng)域新標(biāo)準(zhǔn)新技術(shù)的發(fā)展,市場(chǎng)日益要求我們提高微波功率放大器的性能,并且具有更高的輸出功率、效率和可靠性。本文是在功率放大器研究的背景以及意義下,通過(guò)查閱大量文獻(xiàn)綜述總結(jié)和歸納了功率放大器的發(fā)展現(xiàn)狀以及理論基礎(chǔ),如功率放大器的分類、特點(diǎn)、常用技術(shù)指標(biāo)、穩(wěn)定性等戰(zhàn)術(shù)指標(biāo)后,最終對(duì)功率放大器的偏置電路和匹配電路的實(shí)驗(yàn)方案流程進(jìn)行了設(shè)計(jì)。并通過(guò)對(duì)具體的實(shí)驗(yàn)步驟進(jìn)行了設(shè)計(jì),選取了靜態(tài)工作點(diǎn),對(duì)偏置電路完成了設(shè)計(jì)和穩(wěn)定性的分析,最后根據(jù)分析結(jié)果來(lái)設(shè)計(jì)匹配電路。設(shè)計(jì)完成以后,對(duì)放大器進(jìn)行了仿真實(shí)驗(yàn),該實(shí)驗(yàn)為小信號(hào)S參數(shù)仿真以及帶信號(hào)非線性特性仿真;單管功率放大器仿真實(shí)驗(yàn)結(jié)束以后,設(shè)計(jì)了雙管平衡功率放大器,并將單管功率放大器和雙管平衡功率放大器做了對(duì)比優(yōu)化,最終根據(jù)分析結(jié)果來(lái)設(shè)計(jì)版圖。本文通過(guò)對(duì)單管和雙管的對(duì)比是本次課題研究的創(chuàng)新點(diǎn)。第四章是測(cè)試,對(duì)最終電路的關(guān)鍵射頻指標(biāo)進(jìn)行調(diào)式。
[Abstract]:Microwave solid-state power amplifiers are widely used in electronic countermeasures, satellite communications, mobile communications, navigation, electronic countermeasures, radar systems and various electronic equipment. It has the characteristics of low working voltage, low noise, high efficiency, good linearity and small size. With the development of microwave communication and new standards and technologies in military field, the market increasingly requires us to improve the performance of microwave power amplifier, and has higher output power, efficiency and reliability. Under the background and significance of power amplifier research, this paper summarizes and summarizes the development status and theoretical basis of power amplifier, such as the classification, characteristics, common technical indexes of power amplifier, by consulting a large number of literature review. After the stability and other tactical indicators, the bias circuit and matching circuit of the power amplifier are designed. Through the design of the concrete experimental steps and the selection of the static working point, the design and stability analysis of the bias circuit is completed. Finally, the matching circuit is designed according to the analysis results. After the design is completed, the simulation experiment of the amplifier is carried out, which is small signal S-parameter simulation and the simulation of nonlinear characteristics with signal. After the simulation experiment of the single-transistor power amplifier, the double-transistor balanced power amplifier is designed, and the single-transistor power amplifier and the double-transistor balanced power amplifier are compared and optimized. Finally, the layout is designed according to the analysis results. Through the comparison of single tube and double tube, this paper is the innovation point of this subject. The fourth chapter is the test, the key radio frequency index of the final circuit is adjusted.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN722.75

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