APD紅外探測器結構與外延工藝研究
發(fā)布時間：2019-03-05 12:06
【摘要】：20世紀以來,隨著光通信日益不斷地向高速大容量傳輸方向發(fā)展,空間探測的不斷創(chuàng)新,高響應速度,大帶寬和高增益接收器件的研制也迅速發(fā)展。為了實現(xiàn)這類器件的制造,雪崩光電二極管(APD)應運而生,并成為其中不可或缺的重要組成部分,主要工作原理就是當耗盡區(qū)內的電場將載流子加速到能量高于禁帶寬度,載流子能夠與晶格發(fā)生碰撞產生附加的二次載流子。一般結構的APD器件是在PIN結構的基礎上增加了雪崩增益區(qū),不僅具備了PIN器件高響應度和快速響應速度的特點,同時其內部的高增益,使得其在微弱光信號的接收方面優(yōu)于傳統(tǒng)的PIN器件。在長波長通信領域,In P基InGaAs探測器在長波長通信窗口波長有很高的響應度,本文正是針對InP基APD器件,主要對吸收,漸變,電荷,倍增區(qū)分離式結構的APD器件(SAGCM-APD)進行研究,分析結構參數(shù)對器件的影響,在PIN制造工藝參數(shù)的基礎上,進一步優(yōu)化結構,實驗制備此器件,主要從事的工作如下:1)從最基礎的APD器件工作原理介紹,分別闡述幾類常見的APD器件結構,然后分析影響光電探測器的幾個重要參數(shù)。2)對InP基SAGCM-APD的結構參數(shù)進行計算模擬,主要分析電場分布,倍增因子的變化,吸收層厚度的模擬,確定SAGCM-APD結構參數(shù)。3)優(yōu)化InP基P型In0.53Ga0.47AsMOCVD外延參數(shù),優(yōu)化In GaAs的生長得到晶格匹配的外延層。4)制備InP基SAGCM-APD器件,測量到明顯的光電流,確定形成雪崩擊穿狀態(tài)。
[Abstract]:Since the 20th century, with the increasing development of optical communication to high-speed and large-capacity transmission, the innovation of space detection, the development of high response speed, large bandwidth and high-gain receiver devices have also developed rapidly. In order to achieve the fabrication of such devices, avalanche photodiodes (APD) emerged as the times require, and become an indispensable and important part of the device. The main principle is that when the electric field in the depletion region accelerates the carrier to energy higher than the band-gap width, The carrier can collide with the lattice to produce additional secondary carriers. The APD device of general structure increases avalanche gain area on the basis of PIN structure. It not only has the characteristics of high responsivity and fast response speed of PIN device, but also has high gain inside. It is superior to the traditional PIN device in the reception of weak optical signal. In the field of long-wavelength communication, InP-based InGaAs detector has high responsivity in the wavelength of long-wavelength communication window. This paper is aimed at InP-based APD devices, mainly for absorption, gradual change, charge, etc. The multiplicative region separated APD device (SAGCM-APD) is studied, and the influence of structural parameters on the device is analyzed. On the basis of PIN manufacturing process parameters, the structure of the device is further optimized, and the device is fabricated experimentally. The main work is as follows: 1) from the introduction of the most basic principle of APD devices, several kinds of common APD device structures are described respectively. Secondly, several important parameters affecting the photodetector are analyzed. 2) the structure parameters of InP-based SAGCM-APD are simulated, mainly the distribution of electric field, the change of multiplier factor and the simulation of the thickness of absorption layer. The structure parameters of SAGCM-APD are determined. 3) optimizing the epitaxial parameters of InP-based P-type In0.53Ga0.47AsMOCVD, optimizing the growth of In GaAs to obtain lattice-matched epitaxial layer. 4) fabricating InP-based SAGCM-APD devices and measuring the apparent photocurrent. Determine the state of avalanche breakdown.
【學位授予單位】：北京工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN312.7;TN215
本文編號：2434888
[Abstract]:Since the 20th century, with the increasing development of optical communication to high-speed and large-capacity transmission, the innovation of space detection, the development of high response speed, large bandwidth and high-gain receiver devices have also developed rapidly. In order to achieve the fabrication of such devices, avalanche photodiodes (APD) emerged as the times require, and become an indispensable and important part of the device. The main principle is that when the electric field in the depletion region accelerates the carrier to energy higher than the band-gap width, The carrier can collide with the lattice to produce additional secondary carriers. The APD device of general structure increases avalanche gain area on the basis of PIN structure. It not only has the characteristics of high responsivity and fast response speed of PIN device, but also has high gain inside. It is superior to the traditional PIN device in the reception of weak optical signal. In the field of long-wavelength communication, InP-based InGaAs detector has high responsivity in the wavelength of long-wavelength communication window. This paper is aimed at InP-based APD devices, mainly for absorption, gradual change, charge, etc. The multiplicative region separated APD device (SAGCM-APD) is studied, and the influence of structural parameters on the device is analyzed. On the basis of PIN manufacturing process parameters, the structure of the device is further optimized, and the device is fabricated experimentally. The main work is as follows: 1) from the introduction of the most basic principle of APD devices, several kinds of common APD device structures are described respectively. Secondly, several important parameters affecting the photodetector are analyzed. 2) the structure parameters of InP-based SAGCM-APD are simulated, mainly the distribution of electric field, the change of multiplier factor and the simulation of the thickness of absorption layer. The structure parameters of SAGCM-APD are determined. 3) optimizing the epitaxial parameters of InP-based P-type In0.53Ga0.47AsMOCVD, optimizing the growth of In GaAs to obtain lattice-matched epitaxial layer. 4) fabricating InP-based SAGCM-APD devices and measuring the apparent photocurrent. Determine the state of avalanche breakdown.
【學位授予單位】：北京工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN312.7;TN215
【參考文獻】
相關期刊論文 前1條
1 楊志鴻,王樹堂,曾靖,朱龍德,孫捷,夏彩虹,沈戎,歸強;MOCVD生長的平面型InGaAs/InP PIN光電探測器件[J];紅外與毫米波學報;1993年02期
，本文編號：2434888
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