【摘要】：自上世紀(jì)80年代以來(lái),有機(jī)場(chǎng)效應(yīng)晶體管作為一種新型有機(jī)半導(dǎo)體器件,因具有可修飾性強(qiáng)、材料種類多、制備簡(jiǎn)單、成本低廉,且特別適合于制備大面積的電子器件這些無(wú)機(jī)場(chǎng)效應(yīng)管所不具備的優(yōu)點(diǎn),而越來(lái)越多地受到重視并取得了巨大的進(jìn)展。近年來(lái),實(shí)現(xiàn)對(duì)有機(jī)場(chǎng)效應(yīng)晶體管性能的提高成為了一個(gè)重要的研究課題,這對(duì)于未來(lái)實(shí)現(xiàn)純有機(jī)電路具有極其重要的意義。本論文針對(duì)提高小分子有機(jī)場(chǎng)效應(yīng)晶體管性能展開(kāi)了一系列研究。我們首先簡(jiǎn)單介紹了有機(jī)場(chǎng)效應(yīng)晶體管的研究背景、研究意義、應(yīng)用、發(fā)展過(guò)程中存在的問(wèn)題、結(jié)構(gòu)、常用材料、基本工作原理以及性能指標(biāo)等方面內(nèi)容,接著介紹了器件的制備流程及性能表征方法。論文主要研究?jī)?nèi)容分為三個(gè)方面,包括:1)采用MoO3修飾電極/有機(jī)半導(dǎo)體界面并利用摻雜層修飾有機(jī)半導(dǎo)體/絕緣層界面,探究各比例摻雜層對(duì)器件閾值電壓的調(diào)控作用。性能最優(yōu)的器件閾值電壓從標(biāo)準(zhǔn)器件的-10.2 V下降到-1 V,載流子遷移率達(dá)到9×10-4 cm2/V?s。器件在130℃熱板上進(jìn)行退火25min后,閾值電壓從標(biāo)準(zhǔn)器件的-10.2 V降到-2 V,器件的遷移率達(dá)到1.9×10-3 cm2/V?s。器件的壽命由一百小時(shí)提升到了兩百小時(shí)左右。2)利用MoO3作為摻雜材料制備了基于并五苯的場(chǎng)效應(yīng)晶體管。器件閾值電壓由對(duì)應(yīng)的標(biāo)準(zhǔn)器件的-5.1 V降到-2 V,載流子遷移率達(dá)到1×10-2 cm2/V?s。通過(guò)對(duì)并五苯蒸鍍速率的調(diào)整制備出的器件閾值電壓從標(biāo)準(zhǔn)器件的-5.1 V降到-1.7 V,器件的遷移率達(dá)到3×10-2 cm2/V?s。3)將含有MoO3和摻雜修飾層的基于酞菁銅以及基于并五苯的有機(jī)場(chǎng)效應(yīng)晶體管器件分別應(yīng)用到DNA生物傳感檢測(cè)中,分析實(shí)驗(yàn)結(jié)果并提出可供參照的研究方案。
[Abstract]:Since the 1980s, as a new type of organic semiconductor device, there have been airfield effect transistors, because of their strong modifiability, variety of materials, simple preparation and low cost. And it is especially suitable for fabricating large area electronic devices, which are not the advantages of inorganic FET, and more attention has been paid and great progress has been made. In recent years, improving the performance of field-effect transistors has become an important research topic, which is of great significance for the realization of pure organic circuits in the future. In this thesis, a series of studies have been carried out to improve the performance of small molecule airfield effect transistors. First of all, we briefly introduce the research background, significance, application, problems existing in the development process, structure, common materials, basic working principle and performance index of the FET. Then the fabrication process and performance characterization of the device are introduced. The main research contents are as follows: 1) using MoO3 modified electrode / organic semiconductor interface and doping layer to modify organic semiconductor / insulator interface, the effect of doping layer on the threshold voltage of the device is investigated. The threshold voltage of the device with optimal performance decreases from -10.2 V to -1 V, and the carrier mobility reaches 9 脳 10 ~ (-4) cm2/V?s.. After annealing on a hot plate at 130 鈩，

本文編號(hào)：2412878