基于SIW的W波段毫米波功率合成技術研究
發(fā)布時間：2019-01-21 18:23
【摘要】：高功率放大器是無線通信系統(tǒng)發(fā)射機中不可或缺的關鍵部件。隨著無線通信系統(tǒng)向高頻的快速發(fā)展,對于高頻、高效、寬帶、大功率的功率器件的需求與日俱增。但隨著頻率的增加,固態(tài)功率器件的尺寸和功率容量卻在顯著地減少,單個固態(tài)功率器件常常難以滿足系統(tǒng)的需求。為此,毫米波高功率發(fā)射系統(tǒng)常常需要功率合成技術得以實現(xiàn),其中空間功率合成技術的合成效率幾乎不受合成路數(shù)的影響,在多路合成時具有顯著優(yōu)勢。本文充分結(jié)合了空間功率合成技術和新型的電磁波導波結(jié)構——基片集成波導(SIW)的優(yōu)勢,在毫米波高頻段W波段提出了多種功率合成實施方案。本文的主要工作成果有:1、在W波段將常用的矩形波導-微帶探針過渡和微帶-SIW直線漸變過渡相結(jié)合,設計了SIW到矩形波導的寬帶探針過渡,該設計具有結(jié)構體積小、結(jié)構簡單的優(yōu)點。實物測試結(jié)果表明,一對過渡轉(zhuǎn)換器與一段SIW所組成的背靠背結(jié)構在整個W波段的反射系數(shù)都小于-10dB,而總插損在75-106GHz的頻率范圍內(nèi)都小于2dB,具有低損寬帶的特點。2、從開槽SIW的分析出發(fā),基于行波功率合成理論,在W波段基于開槽SIW提出了一個四路行波功率合成器。該合成器工作在88—94.2GHz的頻段內(nèi),插入損耗在0.34 dB到0.73dB之間,具有易集成、帶寬相對較寬、插入損耗較低、合成效率較高、合成路數(shù)易擴展的特點。3、基于雙層SIW寬邊縫隙耦合器,在W波段提出了一種雙層SIW四路功率合成器。由于耦合器高隔離度的特性,以及耦合都發(fā)生在SIW內(nèi)部而沒有能量的泄露,該合成器具有低損寬帶、合成效率高、橫向尺寸小等優(yōu)點。4、基于多層SIW與矩形波導的過渡結(jié)構,在W波段提出了一種四層SIW四路功率合成器。該合成器采用波導內(nèi)空間功率合成技術,不僅具有低損寬帶、合成效率高、結(jié)構簡單等優(yōu)點,且其合成效率幾乎不隨合成路數(shù)的影響。
[Abstract]:High power amplifier is an indispensable key component in wireless communication system transmitter. With the rapid development of wireless communication system to high frequency, the demand for high frequency, high efficiency, wide band and high power devices is increasing day by day. However, with the increase of frequency, the size and power capacity of solid-state power devices decrease significantly, and a single solid-state power device is often difficult to meet the needs of the system. Therefore, millimeter-wave high-power transmission systems often need power combination technology to realize, in which the synthesis efficiency of space power synthesis technology is almost independent of the number of synthetic paths, and has a significant advantage in multi-channel synthesis. In this paper, the advantages of space power synthesis technology and a new electromagnetic guided wave structure-substrate integrated waveguide (SIW) are fully combined, and a variety of power combination schemes are proposed in the W-band of millimeter-wave high frequency band. The main results of this paper are as follows: 1. The wide band probe transition from SIW to rectangular waveguide is designed by combining the transition of rectangular waveguide with microstrip probe and the linear gradual transition of microstrip to SIW in W band. The advantage of simple structure. The physical test results show that the reflection coefficient of the back-to-back structure composed of a pair of transition converters and a section of SIW is less than -10 dB in the whole W band, while the total insertion loss is less than 2 dB in the frequency range of 75-106GHz, which has the characteristics of low loss broadband. Based on the analysis of slotted SIW and the theory of traveling wave power combination, a four-channel traveling wave power synthesizer is proposed in W band based on grooved SIW. The synthesizer works in the frequency band of 88-94.2GHz, and the insertion loss is between 0.34 dB and 0.73dB. It has the characteristics of easy integration, relatively wide bandwidth, low insertion loss, high synthesis efficiency and easy expansion of the synthesis path. Based on double layer SIW wide edge slot coupler, a double layer SIW four channel power synthesizer is proposed in W band. Because of the high isolation of coupler and the fact that the coupling occurs inside SIW without energy leakage, the synthesizer has the advantages of low loss broadband, high synthesis efficiency and small transverse size. 4, based on the transition structure between multilayer SIW and rectangular waveguide. A four-layer SIW four-way power synthesizer is proposed in the W band. The synthesizer uses space power synthesis technology in waveguide, which has the advantages of low loss broadband, high synthesis efficiency and simple structure, and its synthesis efficiency is almost independent of the number of synthetic paths.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN722.75;TN73
本文編號：2412909
[Abstract]:High power amplifier is an indispensable key component in wireless communication system transmitter. With the rapid development of wireless communication system to high frequency, the demand for high frequency, high efficiency, wide band and high power devices is increasing day by day. However, with the increase of frequency, the size and power capacity of solid-state power devices decrease significantly, and a single solid-state power device is often difficult to meet the needs of the system. Therefore, millimeter-wave high-power transmission systems often need power combination technology to realize, in which the synthesis efficiency of space power synthesis technology is almost independent of the number of synthetic paths, and has a significant advantage in multi-channel synthesis. In this paper, the advantages of space power synthesis technology and a new electromagnetic guided wave structure-substrate integrated waveguide (SIW) are fully combined, and a variety of power combination schemes are proposed in the W-band of millimeter-wave high frequency band. The main results of this paper are as follows: 1. The wide band probe transition from SIW to rectangular waveguide is designed by combining the transition of rectangular waveguide with microstrip probe and the linear gradual transition of microstrip to SIW in W band. The advantage of simple structure. The physical test results show that the reflection coefficient of the back-to-back structure composed of a pair of transition converters and a section of SIW is less than -10 dB in the whole W band, while the total insertion loss is less than 2 dB in the frequency range of 75-106GHz, which has the characteristics of low loss broadband. Based on the analysis of slotted SIW and the theory of traveling wave power combination, a four-channel traveling wave power synthesizer is proposed in W band based on grooved SIW. The synthesizer works in the frequency band of 88-94.2GHz, and the insertion loss is between 0.34 dB and 0.73dB. It has the characteristics of easy integration, relatively wide bandwidth, low insertion loss, high synthesis efficiency and easy expansion of the synthesis path. Based on double layer SIW wide edge slot coupler, a double layer SIW four channel power synthesizer is proposed in W band. Because of the high isolation of coupler and the fact that the coupling occurs inside SIW without energy leakage, the synthesizer has the advantages of low loss broadband, high synthesis efficiency and small transverse size. 4, based on the transition structure between multilayer SIW and rectangular waveguide. A four-layer SIW four-way power synthesizer is proposed in the W band. The synthesizer uses space power synthesis technology in waveguide, which has the advantages of low loss broadband, high synthesis efficiency and simple structure, and its synthesis efficiency is almost independent of the number of synthetic paths.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN722.75;TN73
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