【摘要】：電子器件的結溫過高將會引發(fā)器件性能降低、可靠性降低、壽命降低等故障。隨著器件小尺寸化和高集成化進程,有限的空間承載的功率密度越來越大,特別是多芯片組件(MCM)是典型的多熱源器件,其散熱問題已嚴重阻礙多芯片組件的發(fā)展。熱阻是表征器件散熱性能的重要熱學參數(shù),電子器件散熱性能的研究離不開熱阻的測試,因此展開對多熱源功率器件瞬態(tài)熱阻測試技術的研究具有重要意義和應用價值。論文分析了NPN型三極管的電學法熱阻測試原理,將樣品在不同測試電流、不同殼溫、不同壓力、相同功率不同電壓-電流組合等條件下進行實驗,總結出了各種因素對器件熱學參數(shù)的影響規(guī)律,基于這些規(guī)律得到了瞬態(tài)熱阻測試的最佳的測試條件�；趯�性疊加原理的分析,從實驗和理論上驗證了用線性疊加原理表征瞬態(tài)熱阻矩陣的可行性�；赗C網(wǎng)絡理論推導出瞬態(tài)熱阻矩陣函數(shù)關于時間的表達式,利用Origin軟件擬合分析瞬態(tài)熱阻測試結果,驗證了瞬態(tài)熱阻矩陣函數(shù)的正確性。根據(jù)與器件實際物理結構相對應的CAUER模型,給出CAUER模型的圖像表征形式即積分結構函數(shù)。運用積分結構函數(shù)對瞬態(tài)熱響應曲線處理,從積分結構函數(shù)的轉折點處分離器件的結構,分離得到的每一部分對應器件每層結構的熱阻。利用Origin軟件和理論計算驗證了積分結構函數(shù)提取方法的可取性。
[Abstract]:Too high junction temperature of electronic devices will lead to lower performance, lower reliability and lower life. With the process of miniaturization and high integration, the power density of the limited space is increasing, especially the multi-chip module (MCM) is a typical multi-heat source device, its heat dissipation has seriously hindered the development of multi-chip components. Thermal resistance is an important thermal parameter to characterize the heat dissipation performance of the devices. The research of the thermal resistance of electronic devices is inseparable from the thermal resistance testing. Therefore, it is of great significance and application value to study the transient thermal resistance measurement technology of multi-heat source power devices. In this paper, the principle of thermal resistance measurement of NPN transistor is analyzed. The samples are tested under different testing current, different shell temperature, different pressure, same power, different voltage-current combination, etc. The influence of various factors on the thermal parameters of the device is summarized. Based on these laws, the optimal testing conditions for transient thermal resistance testing are obtained. Based on the analysis of the linear superposition principle, the feasibility of using the linear superposition principle to characterize the transient thermal resistance matrix is verified experimentally and theoretically. Based on the RC network theory, the time expression of the transient thermal resistance matrix function is derived. The transient thermal resistance matrix function is verified by fitting and analyzing the transient thermal resistance test results with the Origin software. According to the CAUER model corresponding to the actual physical structure of the device, the image representation of the CAUER model is presented, that is, the integral structure function. The integral structure function is used to deal with the transient thermal response curve. The structure of the device is separated from the turning point of the integral structure function, and the thermal resistance of each layer of the device is obtained by separating each part of the device. The feasibility of the integral structure function extraction method is verified by Origin software and theoretical calculation.
【學位授予單位】：華南理工大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN606

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