發(fā)布時(shí)間：2018-10-13 16:42

【摘要】：伴隨著人們對(duì)于電磁輻射應(yīng)用越來(lái)越廣泛,THz輻射由于其特殊性在近年來(lái)越來(lái)越受到研究人員的關(guān)注。研究人對(duì)于作為T(mén)Hz技術(shù)重點(diǎn)的THz輻射源以及探測(cè)器件更高的性能追求從未停止。由于半導(dǎo)體器件制作工藝成熟且易于集成,因而以半導(dǎo)體器件為核心的THz器件受到了研究人員的偏愛(ài)�；诟鞣N機(jī)理的半導(dǎo)體THz器件被不斷的開(kāi)發(fā)出來(lái)。等離子體波器件由于其獨(dú)特的物理原理,在室溫下也可以作為T(mén)Hz輻射發(fā)射器或THz輻射探測(cè)器來(lái)使用。本文通過(guò)對(duì)兩種等離子體波器件MOSFET和HEMT的介紹以及對(duì)等離子體的介紹,得到器件溝道內(nèi)的電子可以類(lèi)比為等離子體的結(jié)論。由于人們通常用流體描述的方法來(lái)描述等離子體的行為,因此流體描述的方法可以用來(lái)描述等離子體波器件中的電子的行為。于是本文基于流體動(dòng)力學(xué)方程,探討了等離子體波器件中等離子體波產(chǎn)生的原因和邊界條件。并對(duì)等離子體波器件中等離子體波的產(chǎn)生的物理意義進(jìn)行了探討。隨后本文描繪了等離子體波器件用作THz探測(cè)器的潛力。基于流體力學(xué)方程得到了描述非共振等離子體波器件響應(yīng)的數(shù)學(xué)模型。該數(shù)學(xué)模型描述的是在緩變溝道近似的條件下探測(cè)器的響應(yīng)與柵壓以及漏源電流的關(guān)系。通過(guò)對(duì)模型的分析得出了模型在柵壓接近或者小于閾值電壓時(shí)不再適用的結(jié)論。通過(guò)對(duì)柵壓接近閾值電壓或小于閾值電壓時(shí)溝道電子密度與柵壓的關(guān)系式的修正,得到了新的描述器件響應(yīng)與柵壓關(guān)系的數(shù)學(xué)模型。通過(guò)MATLAB軟件首先對(duì)器件響應(yīng)的理論模型與實(shí)際的測(cè)量數(shù)據(jù)進(jìn)行對(duì)比,驗(yàn)證了模型的正確性。隨后又對(duì)理論模型與實(shí)際測(cè)量數(shù)據(jù)之間的誤差進(jìn)行了分析,簡(jiǎn)要分析了柵漏電流,電子遷移率和實(shí)際電路對(duì)于誤差的貢獻(xiàn)。然后探討了器件的響應(yīng)與參數(shù)k',η以及溫度的關(guān)系。再通過(guò)計(jì)算和分析得出了響應(yīng)模型適用的范圍。最后對(duì)于模型中的一些問(wèn)題進(jìn)行了說(shuō)明,并描述了這些問(wèn)題對(duì)于器件響應(yīng)的影響。并對(duì)實(shí)際的器件結(jié)構(gòu)的要求進(jìn)行了說(shuō)明,描述了等離子體波器件未來(lái)的主要發(fā)展方向。
[Abstract]:With the increasing application of electromagnetic radiation, THz radiation has attracted more and more attention of researchers in recent years because of its particularity. The search for higher performance of THz radiation sources and detectors, which are the focus of THz technology, has never stopped. Due to the mature fabrication process and easy integration of semiconductor devices, THz devices with semiconductor devices as the core are preferred by researchers. Semiconductor THz devices based on various mechanisms have been continuously developed. Plasma wave devices can also be used as THz radiation emitters or THz radiation detectors at room temperature due to their unique physical principles. Through the introduction of two kinds of plasma wave devices, MOSFET and HEMT, and the plasma, the conclusion that the electrons in the channel of the device can be analogous to plasma is obtained in this paper. Because people usually describe the behavior of plasma by fluid description method, fluid description method can be used to describe the behavior of electrons in plasma wave devices. Based on the hydrodynamic equation, the causes and boundary conditions of plasma waves in plasma wave devices are discussed in this paper. The physical meaning of plasma wave generation in plasma wave devices is also discussed. Then the potential of plasma wave devices as THz detectors is described. Based on the hydrodynamic equation, a mathematical model for describing the response of non-resonant plasmon wave devices is obtained. The mathematical model describes the relationship between the detector response and gate voltage and drain current under the condition of slowly varying channel approximation. Through the analysis of the model, the conclusion that the model is no longer applicable when the gate voltage is close to or less than the threshold voltage is obtained. By modifying the relationship between gate voltage and gate voltage when gate voltage is close to threshold voltage or less than threshold voltage, a new mathematical model describing the relationship between device response and gate voltage is obtained. The correctness of the model is verified by comparing the theoretical model of the device response with the actual measurement data by MATLAB software. Then the error between the theoretical model and the actual measurement data is analyzed, and the contribution of the gate leakage current, electron mobility and the actual circuit to the error is briefly analyzed. Then the relationship between the response of the device and the parameters KN, 畏 and temperature is discussed. Through calculation and analysis, the scope of application of the response model is obtained. Finally, some problems in the model are explained, and the effects of these problems on the device response are described. The requirements of practical device structures are also described, and the future development of plasma wave devices is described.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN386

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 金飚兵;單文磊;郭旭光;秦華;;太赫茲?rùn)z測(cè)技術(shù)[J];物理;2013年11期

2 谷智;陳沅;李煥勇;介萬(wàn)奇;;太赫茲輻射源的研究進(jìn)展[J];紅外技術(shù);2011年05期

3 姚建銓;;太赫茲技術(shù)及其應(yīng)用[J];重慶郵電大學(xué)學(xué)報(bào)(自然科學(xué)版);2010年06期

4 蔡禾;郭雪嬌;和挺;潘銳;熊偉;沈京玲;;太赫茲技術(shù)及其應(yīng)用研究進(jìn)展[J];中國(guó)光學(xué)與應(yīng)用光學(xué);2010年03期

5 劉盛綱;鐘任斌;;太赫茲科學(xué)技術(shù)及其應(yīng)用的新發(fā)展[J];電子科技大學(xué)學(xué)報(bào);2009年05期

6 朱彬;陳彥;鄧科;胡煒;;太赫茲科學(xué)技術(shù)及其應(yīng)用[J];成都大學(xué)學(xué)報(bào)(自然科學(xué)版);2008年04期

7 王憶鋒;毛京湘;;太赫茲技術(shù)的發(fā)展現(xiàn)狀及應(yīng)用前景分析[J];光電技術(shù)應(yīng)用;2008年01期

8 劉盛綱;;太赫茲科學(xué)技術(shù)的新發(fā)展[J];中國(guó)基礎(chǔ)科學(xué);2006年01期

9 張鋒;等離子體中的波動(dòng)[J];臨沂師范學(xué)院學(xué)報(bào);2003年06期

10 盧書(shū)城,田愛(ài)華;WKB近似在定態(tài)微擾問(wèn)題中的應(yīng)用[J];大學(xué)物理;1993年03期

，

本文編號(hào)：2269277