【摘要】：為正確地評估高速SiC MOSFET的開關(guān)特性,基于雙脈沖測試平臺對精準(zhǔn)的測試方法進(jìn)行研究。首先,仿真證明電路中寄生電感對SiC MOSFET開關(guān)特性的影響,優(yōu)化設(shè)計(jì)PCB布局以減小寄生電感,對比PCB布局優(yōu)化前后的測試結(jié)果。其次,對比分析續(xù)流二極管的結(jié)電容以及負(fù)載電感的寄生電容對SiC MOSFET開通特性的影響。然后,對比分析使用不同帶寬的非隔離電壓探頭、不同電壓探頭地線連接方式、不同電流測試設(shè)備對測試結(jié)果的影響,并說明電壓與電流波形之間相位延遲對開關(guān)能量損耗的影響。最后,對比分析不同測試點(diǎn)對測試結(jié)果的影響。
[Abstract]:In order to correctly evaluate the switching characteristics of high speed SiC MOSFET, the accurate test method based on dual pulse test platform was studied. First, the effect of parasitic inductance on the switching characteristics of SiC MOSFET is proved by simulation. The PCB layout is optimized to reduce the parasitic inductance, and the test results before and after the optimization of PCB layout are compared. Secondly, the effects of junction capacitance of recurrent diode and parasitic capacitance of load inductor on the switching characteristics of SiC MOSFET are compared and analyzed. Then, the influence of different voltage probe with different bandwidth, different voltage probe ground connection mode, different current testing equipment on the test results is compared and analyzed. The effect of phase delay between voltage and current waveform on switching energy loss is also explained. Finally, the effects of different test points on the test results are compared and analyzed.
【作者單位】： 北京交通大學(xué)電氣工程學(xué)院;
【分類號】：TN386

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本文編號：2190147