【摘要】：局域表面等離子體(Local Surface Plasmon,LSP)納米光刻技術(shù)以簡單的系統(tǒng)結(jié)構(gòu)、靈活的刻寫方式、無需掩模以及超越衍射極限的分辨力等優(yōu)勢成為納米光刻技術(shù)領(lǐng)域的研究熱點(diǎn)。所謂LSP納米光刻技術(shù),即通過利用長波長光源照明亞波長尺寸的探針或小孔,在探針或者小孔與介質(zhì)的界面處激發(fā)LSP,LSP在探針針尖或者小孔間隙處急劇振蕩形成LSP共振,利用表面等離子體(Surface Plasmon,SP)的短波長特性獲得超衍射聚焦光斑,并將其應(yīng)用到超衍射納米光刻中。然而在基于LSP共振納米光刻中,由于LSP振蕩產(chǎn)生的攜帶高頻信息的倏逝波僅在激發(fā)結(jié)構(gòu)的表面?zhèn)鞑?在垂直于激發(fā)結(jié)構(gòu)表面方向上以指數(shù)形式衰減,這就要求在LSP納米光刻中,激發(fā)結(jié)構(gòu)與光學(xué)記錄介質(zhì)的距離必須在幾個(gè)納米的范圍內(nèi),而這必然帶來距離控制的難題。同時(shí)倏逝波在垂直結(jié)構(gòu)表面方向指數(shù)衰減的場分布也會(huì)導(dǎo)致納米光刻圖形曝光深度淺、對比度低、邊緣模糊的問題。這限制了基于LSP納米光刻技術(shù)進(jìn)一步走向應(yīng)用。針對這些問題,本論文從研究用于激發(fā)LSP的領(lǐng)結(jié)型Bowtie結(jié)構(gòu)的電磁場特性與共振行為出發(fā),將Bowtie小孔結(jié)構(gòu)與金屬-介質(zhì)-金屬結(jié)構(gòu)相結(jié)合,提出了一種基于LSP共振的增強(qiáng)型納米光刻結(jié)構(gòu),通過對LSP及其共振行為的操控,得到了深度拓展、尺寸壓縮、強(qiáng)度增強(qiáng)的聚焦光斑。本文的主要?jiǎng)?chuàng)新點(diǎn)有:1、研究分析了基于Bowtie小孔的LSP納米光刻的透射增強(qiáng)原理及光刻質(zhì)量的影響因素。2、提出一種新型的Bowtie(B)+金屬(M)-電介質(zhì)(I)-金屬(M)的增強(qiáng)型納米光刻結(jié)構(gòu),并通過理論仿真獲得了最小特征寬度為28nm,曝光深度為30nm的聚焦光斑,相對于傳統(tǒng)基于Bowtie的光刻結(jié)構(gòu)將焦斑尺寸壓縮了近67%。3、開展驗(yàn)證實(shí)驗(yàn),獲得了最小特征寬度為31nm的光刻結(jié)果,同時(shí)相對于傳統(tǒng)Bowtie光刻結(jié)構(gòu),將30nm到100nm特征尺寸范圍內(nèi)的曝光圖形深度提升了近5倍。驗(yàn)證了這種增強(qiáng)型光刻結(jié)構(gòu)在壓縮焦斑尺寸、提升曝光深度上的顯著效果。
[Abstract]:Local Surface Plasma (Local Surface Plasmon LSP (LSP) nanocrystalline lithography technology has become a hotspot in the field of nano-lithography with the advantages of simple system structure, flexible writing method, no mask and resolution beyond the diffraction limit. The so-called LSP nano-lithography technology, which uses a long wavelength light source to illuminate a probe or hole of sub-wavelength size, excites the LSPLSP to oscillate sharply at the tip or pore gap of the probe to form a LSP resonance at the interface between the probe or the pore and the medium. Superdiffractive focusing spot was obtained by using the short wavelength characteristics of Surface Plasmon SP and applied to superdiffractive nanocrystalline lithography. However, in LSP resonance nanocrystalline lithography, evanescent waves with high frequency information produced by LSP oscillation propagate only on the surface of excited structure, and decay exponentially in the direction perpendicular to the surface of excited structure, which requires that in LSP nanocrystalline lithography, The distance between the excitation structure and the optical recording medium must be in the range of several nanometers, which inevitably leads to the difficulty of distance control. At the same time the field distribution of evanescent wave in the direction of exponential attenuation in the vertical surface also leads to the problems of low exposure depth low contrast and blurry edge of nano-lithography. This limits the further application of nanometer lithography based on LSP. In order to solve these problems, the electromagnetic field characteristics and resonance behavior of the bow tie Bowtie structure which is used to excite LSP are studied in this paper. The Bowtie pore structure is combined with the metal-dielectric metal structure. An enhanced nanocrystalline lithography structure based on LSP resonance is proposed. By controlling the LSP and its resonance behavior, the focusing spot with depth expansion, size compression and strength enhancement is obtained. The main innovation of this paper is: 1. The transmission enhancement principle of LSP nanocrystalline lithography based on Bowtie pore and the influencing factors of lithography quality are analyzed. A new type of Bowtie (B) metal (M) dielectric (I) metal (M) enhanced nanocrystalline lithography structure is proposed. The focal spot with the minimum feature width of 28 nm and the exposure depth of 30nm is obtained by theoretical simulation. Compared with the traditional lithography structure based on Bowtie, the focal spot size is compressed by nearly 67.3, and the verification experiment is carried out, and the lithography results with the minimum feature width of 31nm are obtained. At the same time, compared with the traditional Bowtie lithography structure, the depth of the exposure pattern from 30nm to 100nm is nearly five times higher than that of the traditional Bowtie lithography structure. The effect of the enhanced lithography structure on compression focal spot size and exposure depth is verified.
【學(xué)位授予單位】：中國科學(xué)院研究生院（光電技術(shù)研究所）
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN305.7

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