基于玻璃基波導(dǎo)的石墨烯光電探測器的研究
發(fā)布時(shí)間：2018-08-07 13:01
【摘要】：在集成光電子學(xué)的領(lǐng)域中,通過離子交換技術(shù)制作的玻璃基光波導(dǎo)具有成本低廉、波長不敏感、環(huán)境穩(wěn)定性好、易于在系統(tǒng)中集成等優(yōu)勢,適合于大批量生產(chǎn)光無源及有源器件。石墨烯作為一種新興的二維材料,具有優(yōu)異的光電特性,在理論和光電器件方面的研究也已取得了豐碩的成果。本文的研究工作主要集中于將玻璃基波導(dǎo)結(jié)構(gòu)與石墨烯相結(jié)合,利用石墨烯獨(dú)特的光電特性,設(shè)計(jì)并成功制作了基于玻璃基波導(dǎo)的石墨烯光電探測器。該器件的工作原理基于光電導(dǎo)效應(yīng),當(dāng)石墨烯吸收波導(dǎo)中光子的能量后,價(jià)帶的電子被激勵(lì)到導(dǎo)帶上,產(chǎn)生光生載流子,從而使石墨烯的電阻減小,器件的光電流增大。不同功率的光入射到器件上會(huì)產(chǎn)生大小不同的光電流,從而實(shí)現(xiàn)光電探測。本文的主要內(nèi)容如下:本文從玻璃基熱離子交換以及石墨烯的經(jīng)典理論出發(fā),計(jì)算了 Ag+-Na+離子交換的歸一化離子濃度、擴(kuò)散深度、石墨烯的電導(dǎo)率、介電常數(shù)以及載流子濃度等基本物理參數(shù)。在此基礎(chǔ)上建立了一個(gè)金屬-石墨烯-金屬光電探測器的模型并計(jì)算了光電流的值,從理論上分析了基于玻璃波導(dǎo)的石墨烯光探測器的性能。本文設(shè)計(jì)了兩種不同電極結(jié)構(gòu)的光電探測器,通過實(shí)驗(yàn)對(duì)工藝流程進(jìn)行了探索并詳細(xì)闡明了實(shí)驗(yàn)條件下合理的工藝過程參數(shù),為光電探測器的成功制作奠定了基礎(chǔ)并為其他基于玻璃波導(dǎo)的石墨烯光器件的制作提供了相關(guān)依據(jù)。本文對(duì)兩種不同電極結(jié)構(gòu)的光電探測器分別進(jìn)行了測試。結(jié)果表明,在外加偏置電壓為1V的條件下,當(dāng)入射光的波長在1500-1600nm范圍內(nèi)探測器響應(yīng)度具有良好的穩(wěn)定性和一致性。對(duì)于1550nm波長入射光,平行電極器件的最大響應(yīng)度可以達(dá)到0.21A/W,叉指電極器件的最大響應(yīng)度達(dá)到0.28A/W。最后,從電導(dǎo)率、電場強(qiáng)度、遷移率等方面對(duì)測試結(jié)果進(jìn)行了分析,并與理論仿真對(duì)比,探討了理論計(jì)算與實(shí)驗(yàn)結(jié)果之間的異同及原因。
[Abstract]:In the field of integrated optoelectronics, the glass-based optical waveguide fabricated by ion exchange technology has the advantages of low cost, insensitive wavelength, good environmental stability and easy integration in the system. Suitable for mass production of optical passive and active devices. As a new two-dimensional material, graphene has excellent photoelectric properties, and has made great achievements in theory and optoelectronic devices. In this paper, we mainly focus on the combination of glass-based waveguide structure and graphene. Based on the unique photoelectric characteristics of graphene, a graphene photodetector based on glass-based waveguide is designed and fabricated successfully. The principle of the device is based on the photoconductivity effect. When graphene absorbs the energy of photons in the waveguide, the valence band electrons are excited to the conduction band, resulting in photogenerated carriers, thus reducing the resistance of graphene and increasing the photocurrent of the device. Different power of light incident on the device will produce different photocurrent, so as to achieve photoelectric detection. The main contents of this paper are as follows: based on the classical theory of glass based thermal ion exchange and graphene, the normalized ion concentration, diffusion depth, conductivity of graphene are calculated. Basic physical parameters such as dielectric constant and carrier concentration. On this basis, a model of metal-graphene metal photodetector is established and the photocurrent value is calculated. The performance of graphene photodetector based on glass waveguide is analyzed theoretically. In this paper, two kinds of photodetectors with different electrode structures are designed. The process flow is explored by experiments and the reasonable process parameters under the experimental conditions are expounded in detail. It lays a foundation for the successful fabrication of photodetectors and provides the relevant basis for the fabrication of other graphene optical devices based on glass waveguide. In this paper, two kinds of photodetectors with different electrode structures have been tested. The results show that the detector responsivity is stable and consistent when the wavelength of the incident light is in the range of 1500-1600nm under the applied bias voltage of 1V. For 1550nm wavelength incident light, the maximum responsivity of parallel electrode devices can reach 0.21A / W, and the maximum responsivity of interDigital electrode devices can reach 0.28A / W. Finally, the test results are analyzed from the aspects of conductivity, electric field intensity and mobility, and compared with the theoretical simulation, the similarities and differences between the theoretical calculation and the experimental results and the reasons are discussed.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN15
本文編號(hào)：2170102
[Abstract]:In the field of integrated optoelectronics, the glass-based optical waveguide fabricated by ion exchange technology has the advantages of low cost, insensitive wavelength, good environmental stability and easy integration in the system. Suitable for mass production of optical passive and active devices. As a new two-dimensional material, graphene has excellent photoelectric properties, and has made great achievements in theory and optoelectronic devices. In this paper, we mainly focus on the combination of glass-based waveguide structure and graphene. Based on the unique photoelectric characteristics of graphene, a graphene photodetector based on glass-based waveguide is designed and fabricated successfully. The principle of the device is based on the photoconductivity effect. When graphene absorbs the energy of photons in the waveguide, the valence band electrons are excited to the conduction band, resulting in photogenerated carriers, thus reducing the resistance of graphene and increasing the photocurrent of the device. Different power of light incident on the device will produce different photocurrent, so as to achieve photoelectric detection. The main contents of this paper are as follows: based on the classical theory of glass based thermal ion exchange and graphene, the normalized ion concentration, diffusion depth, conductivity of graphene are calculated. Basic physical parameters such as dielectric constant and carrier concentration. On this basis, a model of metal-graphene metal photodetector is established and the photocurrent value is calculated. The performance of graphene photodetector based on glass waveguide is analyzed theoretically. In this paper, two kinds of photodetectors with different electrode structures are designed. The process flow is explored by experiments and the reasonable process parameters under the experimental conditions are expounded in detail. It lays a foundation for the successful fabrication of photodetectors and provides the relevant basis for the fabrication of other graphene optical devices based on glass waveguide. In this paper, two kinds of photodetectors with different electrode structures have been tested. The results show that the detector responsivity is stable and consistent when the wavelength of the incident light is in the range of 1500-1600nm under the applied bias voltage of 1V. For 1550nm wavelength incident light, the maximum responsivity of parallel electrode devices can reach 0.21A / W, and the maximum responsivity of interDigital electrode devices can reach 0.28A / W. Finally, the test results are analyzed from the aspects of conductivity, electric field intensity and mobility, and compared with the theoretical simulation, the similarities and differences between the theoretical calculation and the experimental results and the reasons are discussed.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN15
【參考文獻(xiàn)】
相關(guān)期刊論文 前7條
1 張蕓秋;梁勇明;周建新;;石墨烯摻雜的研究進(jìn)展[J];化學(xué)學(xué)報(bào);2014年03期
2 楊宇;靳映霞;王登科;楊杰;王茺;呂正紅;;半導(dǎo)體量子點(diǎn)集成有機(jī)發(fā)光二極管的光光轉(zhuǎn)換器進(jìn)展[J];紅外技術(shù);2013年10期
3 王衛(wèi)東;郝躍;紀(jì)翔;易成龍;牛翔宇;;不同溫度條件下單層石墨烯納米帶弛豫性能的分子動(dòng)力學(xué)研究[J];物理學(xué)報(bào);2012年20期
4 馮向華;季家昒;竇文華;;聚硅氧烷改性及多模光波導(dǎo)制備[J];光學(xué)學(xué)報(bào);2012年05期
5 范輝;陸雨田;;一種改進(jìn)型金屬-半導(dǎo)體-金屬光電探測器數(shù)學(xué)模型[J];中國激光;2007年08期
6 馬麗芹,陸啟生,杜少軍,唐松生,程湘愛;光導(dǎo)型光電探測器瞬變行為的仿真[J];中國激光;2004年03期
7 陳維友,劉式墉;金屬半導(dǎo)體金屬光探測器電路模型的研究[J];電子科學(xué)學(xué)刊;1994年03期
相關(guān)博士學(xué)位論文 前2條
1 王澤高;石墨烯薄膜與還原氧化石墨烯粉末的可控制備及摻雜效應(yīng)研究[D];電子科技大學(xué);2014年
2 鄭偉偉;玻璃基離子交換工藝及波導(dǎo)器件的研究[D];浙江大學(xué);2011年
相關(guān)碩士學(xué)位論文 前1條
1 鄭斌;玻璃基雙層掩埋式光波導(dǎo)的制備與表征[D];浙江大學(xué);2012年
，本文編號(hào)：2170102
本文鏈接：http://sikaile.net/kejilunwen/dianzigongchenglunwen/2170102.html
最近更新
教材專著
