電離輻射對MFIS型鐵電場效應(yīng)晶體管電學(xué)性能的影響
發(fā)布時間：2018-08-07 07:26
【摘要】：鐵電場效應(yīng)晶體管(Fe FET)作為鐵電存儲器中的一員,在現(xiàn)代電子工業(yè)有廣闊的應(yīng)用前景,尤其是在國防電子工業(yè)中很受重視,其具有高存儲密度、非揮發(fā)性、結(jié)構(gòu)簡單、強(qiáng)抗輻射能力等優(yōu)點(diǎn)。金屬層(Metal)-鐵電層(Ferroelectric)-絕緣層(Insulator)-硅基底(Silicon)型鐵電場效應(yīng)晶體管(MFIS-FET)更是解決了金屬層(Metal)-鐵電層(Ferroelectric)-硅基底(Silicon)型鐵電場效應(yīng)晶體管(MFS-FET)鐵電層與硅基底產(chǎn)生反應(yīng)使器件性能降低的缺點(diǎn)。盡管鐵電薄膜和鐵電電容有很強(qiáng)的抗輻射性能,但是MFIS-FET是否具有很強(qiáng)的抗輻射能力,我們還不得而知。因為電子器件的微型化,所以每個單元層互相影響是在所難免的。器件的一部分具有很強(qiáng)的抗輻射能力,不代表整體具有很強(qiáng)的抗輻射能力,這就是我們平時所熟知的“木桶原理”。到目前為止,對Fe FET的抗輻射性能還沒有清晰的研究結(jié)果。本文以MFIS-FET為研究對象,用理論模擬的方法對其進(jìn)行定量的電離輻射效應(yīng)模擬研究。首先,模擬研究了電離輻射環(huán)境下鐵電層極化變化對其性能的影響;其次,模擬研究了電離輻射環(huán)境下硅基底電荷密度變化對其性能的影響;最后,模擬研究了電離輻射環(huán)境下鐵電層電荷輸運(yùn)對其性能的影響。具體研究結(jié)果如下:(1)改進(jìn)米勒模型使其適用于處于電離輻射環(huán)境中的鐵電材料極化的模擬,將此模型代入MFIS-FET中進(jìn)行計算。模擬結(jié)果表明,當(dāng)鐵電層受到10Mrad的輻射時,各物理量的變化很小,基本與輻射前相同;當(dāng)輻射總劑量為100Mrad時,電容、源漏電流等衡量器件性能的物理量發(fā)生明顯的改變,這說明器件隨時有可能失效。(2)推導(dǎo)出了電離輻射環(huán)境下硅基底表面電荷表達(dá)式,代入器件模擬中進(jìn)行計算,發(fā)現(xiàn)隨著輻射劑量率的增大,器件的反型層電荷密度、電荷遷移率變化很小,源漏電流更是變化微小,但硅表面勢有明顯的變化。這說明了電離輻射作用在硅基底上對器件的性能影響不大。(3)建立了一個電離輻射環(huán)境下鐵電層電荷輸運(yùn)的模型,計算結(jié)果表明,當(dāng)電荷輸運(yùn)比例一定時,MFIS-FET電容曲線和源漏電流曲線隨輻射總劑量的增大向負(fù)電壓方向平移,且源漏電流增大。若源漏電流繼續(xù)增大,器件有可能被燒毀。當(dāng)輻射總劑量一定,MFIS-FET電容曲線和源漏電流曲線隨絕緣層阻隔率的變化在一定范圍內(nèi)波動。電離輻射環(huán)境中,絕緣層的存在有利于調(diào)控器件的性能。
[Abstract]:Ferroelectric field effect transistor (Fe FET), as a member of ferroelectric memory, has a wide application prospect in modern electronic industry, especially in national defense electronics industry. It has high storage density, non-volatile and simple structure. Strong radiation resistance and other advantages. Metal layer (Metal) ferroelectric layer (Ferroelectric) insulator (Insulator) Si substrate (Silicon) type ferroelectric field effect transistor (MFIS-FET) solves the disadvantage that the ferroelectric layer of the metal layer (Metal) ferroelectric layer (Ferroelectric) silicon substrate (Silicon) type ferroelectric field effect transistor (MFS-FET) reacts with the silicon substrate to reduce the device performance. Although ferroelectric thin films and ferroelectric capacitors have strong radiation resistance, it is not known whether MFIS-FET has strong radiation resistance. Because of the miniaturization of electronic devices, it is inevitable that each cell layer interacts with each other. Part of the device has strong radiation resistance, does not mean that the whole has a strong radiation resistance, which is known as the "barrel principle". Up to now, no clear results have been obtained on the radiation resistance of Fe FET. In this paper, the quantitative ionizing radiation effects of MFIS-FET are simulated by theoretical simulation. Firstly, the influence of ferroelectric layer polarization on its performance is simulated. Secondly, the influence of silicon substrate charge density under ionizing radiation on its performance is simulated. The effect of ferroelectric layer charge transport on the performance of ionizing radiation was studied. The results are as follows: (1) the modified Hans Muller model is applied to simulate the polarization of ferroelectric materials in ionizing radiation environment, and the model is added to the MFIS-FET to calculate the polarization of ferroelectric materials. The simulation results show that, when the ferroelectric layer is radiated by 10Mrad, the variation of each physical quantity is very small, which is basically the same as that before radiation, and when the total radiation dose is 100Mrad, the physical quantities which measure the performance of the device, such as capacitance, source and drain current, are obviously changed. This indicates that the device may fail at any time. (2) the surface charge expression of silicon substrate in ionizing radiation environment is derived and calculated in the device simulation. It is found that with the increase of radiation dose rate, the inverse layer charge density of the device is obtained. The change of charge mobility is very small, the source and drain current is even smaller, but the surface potential of silicon has obvious change. This shows that ionizing radiation has little effect on the performance of the device on silicon substrate. (3) A model of charge transport in ferroelectric layer under ionizing radiation environment is established, and the calculation results show that, When the charge transport ratio is constant, the capacitance curve and the source-drain current curve of MFIS-FET are shifted to negative voltage with the increase of total radiation dose, and the source-drain current increases. If the source and drain current continues to increase, the device may be destroyed. When the total dose of radiation is constant, the capacitance curve and source / drain current curve of MFIS-FET fluctuate with the insulation barrier rate in a certain range. In the environment of ionizing radiation, the existence of insulation layer is beneficial to the performance of the device.
【學(xué)位授予單位】：湘潭大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN386
本文編號：2169298
[Abstract]:Ferroelectric field effect transistor (Fe FET), as a member of ferroelectric memory, has a wide application prospect in modern electronic industry, especially in national defense electronics industry. It has high storage density, non-volatile and simple structure. Strong radiation resistance and other advantages. Metal layer (Metal) ferroelectric layer (Ferroelectric) insulator (Insulator) Si substrate (Silicon) type ferroelectric field effect transistor (MFIS-FET) solves the disadvantage that the ferroelectric layer of the metal layer (Metal) ferroelectric layer (Ferroelectric) silicon substrate (Silicon) type ferroelectric field effect transistor (MFS-FET) reacts with the silicon substrate to reduce the device performance. Although ferroelectric thin films and ferroelectric capacitors have strong radiation resistance, it is not known whether MFIS-FET has strong radiation resistance. Because of the miniaturization of electronic devices, it is inevitable that each cell layer interacts with each other. Part of the device has strong radiation resistance, does not mean that the whole has a strong radiation resistance, which is known as the "barrel principle". Up to now, no clear results have been obtained on the radiation resistance of Fe FET. In this paper, the quantitative ionizing radiation effects of MFIS-FET are simulated by theoretical simulation. Firstly, the influence of ferroelectric layer polarization on its performance is simulated. Secondly, the influence of silicon substrate charge density under ionizing radiation on its performance is simulated. The effect of ferroelectric layer charge transport on the performance of ionizing radiation was studied. The results are as follows: (1) the modified Hans Muller model is applied to simulate the polarization of ferroelectric materials in ionizing radiation environment, and the model is added to the MFIS-FET to calculate the polarization of ferroelectric materials. The simulation results show that, when the ferroelectric layer is radiated by 10Mrad, the variation of each physical quantity is very small, which is basically the same as that before radiation, and when the total radiation dose is 100Mrad, the physical quantities which measure the performance of the device, such as capacitance, source and drain current, are obviously changed. This indicates that the device may fail at any time. (2) the surface charge expression of silicon substrate in ionizing radiation environment is derived and calculated in the device simulation. It is found that with the increase of radiation dose rate, the inverse layer charge density of the device is obtained. The change of charge mobility is very small, the source and drain current is even smaller, but the surface potential of silicon has obvious change. This shows that ionizing radiation has little effect on the performance of the device on silicon substrate. (3) A model of charge transport in ferroelectric layer under ionizing radiation environment is established, and the calculation results show that, When the charge transport ratio is constant, the capacitance curve and the source-drain current curve of MFIS-FET are shifted to negative voltage with the increase of total radiation dose, and the source-drain current increases. If the source and drain current continues to increase, the device may be destroyed. When the total dose of radiation is constant, the capacitance curve and source / drain current curve of MFIS-FET fluctuate with the insulation barrier rate in a certain range. In the environment of ionizing radiation, the existence of insulation layer is beneficial to the performance of the device.
【學(xué)位授予單位】：湘潭大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN386
【參考文獻(xiàn)】
相關(guān)期刊論文 前1條
1 苗彬彬;王君;陳江濤;閆鵬勛;;鐵電PLZT薄膜的最新研究進(jìn)展[J];人工晶體學(xué)報;2006年03期
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