發(fā)布時間：2018-08-06 19:56

【摘要】：在我們的日常生活中,紫外線無處不在。紫外光電探測器一方面可以為紫外線的調(diào)控做出參考,例如在涂料固化機、醫(yī)療床、消毒柜中的應(yīng)用;另一方面可以作為探測器或者預(yù)警器,例如在軍事、宇航、臭氧層保護、火災(zāi)預(yù)警中的應(yīng)用。紫外光電探測器分為真空紫外探測器(主要指光電倍增管)和固態(tài)紫外探測器(主要指半導(dǎo)體光電二極管)。由于固態(tài)紫外探測器與真空紫外探測器相比,具有不易破損、體積小、能耗低、效率高、利于集成等優(yōu)點,所以固態(tài)紫外探測器成為紫外探測器的研究熱點。傳統(tǒng)的固態(tài)紫外探測器材料有半導(dǎo)體硅、化合物砷化鎵、磷化銦等等,然而由于這些材料禁帶寬度較小,工作溫度較低,基于它們制備的紫外光電探測器在應(yīng)用上受到很多限制。近些年,新型寬禁帶紫外光電材料的發(fā)展使得制備抗高溫,抗輻射,高功率以及高度集成的紫外光電探測器成為可能�，F(xiàn)在紫外光電探測器的主要研究方向有兩個方面:一、完善已有的寬禁帶紫外光電材料,提高其紫外光電探測器性能;二、發(fā)現(xiàn)新的寬禁帶材料,開發(fā)其在紫外光電探測器領(lǐng)域中的應(yīng)用。本論文的工作包括兩個方面:一是基于氧化鎵納米線的紫外光電探測器的制備和研究;二是基于(LaAlO_3)_(0.3)-(SrAl_(0.5)Ta_(0.5)O)3)_(0.7)(LSAT)的紫外光電探測器的制備和研究。在氧化鎵納米線紫外光電探測器的研究中,我們用溶液旋涂法代替了傳統(tǒng)的貴金屬薄膜加熱退火的方法,降低了制備樣品的能耗,同時提高了效率。其次,鑒于Au顆粒在氧化鎵納米線生長過程中不可缺失的重要性,和在掃描電鏡中納米線頭部沒有觀察到金顆粒存在,我們提出氧化鎵納米線CVD生長是基于氣液固和氣固混合模式。然后,我們在氧化鎵納米線網(wǎng)絡(luò)上制備了叉指電極,測試了其光電性能,該光電探測器具有光電靈敏度高、噪聲低、響應(yīng)時間快等優(yōu)良性能,這說明氧化鎵納米線作為一種寬禁帶紫外光電探測器材料,具有很好的應(yīng)用前景。在(LaAlO_3)_(0.3)-(SrAl_(0.5)Ta_(0.5)O)3)_(0.7)(LSAT)單晶紫外光電探測器的研究中,通過微加工技術(shù)制備了基于LSAT的紫外光電探測器,并對該探測器做了一系列光電性能測量,測試結(jié)果表明,該探測器具有良好的日盲特性和超快的時間響應(yīng)特性。此外還通過多個光電單元并聯(lián),增加了光電探測器的探測率。
[Abstract]:Ultraviolet rays are everywhere in our daily life. UV photodetectors can, on the one hand, provide references for the regulation of ultraviolet rays, such as applications in paint curing machines, medical beds, and sterilizing cabinets; on the other hand, they can be used as detectors or early warning devices, such as in military, aerospace, and ozone layer protection. The application of fire warning. UV detector is divided into vacuum ultraviolet detector (mainly refers to photomultiplier tube) and solid state ultraviolet detector (semiconductor photodiode). Compared with the vacuum UV detector, solid-state UV detector has many advantages, such as easy damage, small volume, low energy consumption, high efficiency and good integration, so solid-state UV detector has become the research hotspot of UV detector. Traditional solid-state UV detector materials include semiconductor silicon, compound gallium arsenide, indium phosphide and so on. However, due to the smaller bandgap and lower operating temperature of these materials, The UV photodetectors based on them are limited in application. In recent years, the development of new wide bandgap ultraviolet photoelectric materials makes it possible to prepare high-temperature, radiation-resistant, high-power and highly integrated UV photodetectors. At present, the main research directions of UV photodetectors are as follows: first, to improve the existing wide band forbidden ultraviolet photoelectric materials and to improve the performance of UV photodetectors; second, to discover new wide band gap materials. Develop its application in the field of ultraviolet photoelectricity detector. The work of this thesis includes two aspects: first, the preparation and research of UV photodetectors based on gallium oxide nanowires, and second, the preparation and study of ultraviolet photodetectors based on (LaAlO_3) _ (0.3-) (SrAl_ (0.5) Ta _ (0.5) O) _ (0.7) (LSAT). In the study of ultraviolet photodetectors of gallium oxide nanowires, the solution spin-coating method is used to replace the traditional heating annealing method of noble metal thin films, which reduces the energy consumption and improves the efficiency of sample preparation. Secondly, in view of the importance of au particles in the growth of gan nanowires, and the absence of gold particles in the head of the nanowires in SEM, We propose that Gallium oxide nanowires CVD growth is based on gas-liquid-solid and gas-solid mixing mode. Then, we prepared interDigital electrode on Gallium oxide nanowire network and tested its photoelectric performance. The photodetector has high photoelectric sensitivity, low noise, fast response time and so on. This shows that gallium oxide nanowires as a wide band gap ultraviolet photodetector materials have a good application prospects. In the study of (LaAlO_3) _ (0.3- (SrAl0.5) Ta0.5) O) _ (0.7) (LSAT) single crystal UV photodetector), the UV photodetector based on LSAT has been fabricated by microfabrication technique, and a series of photoelectric properties of the detector have been measured. The results show that, The detector has good solar blindness and super fast time response. In addition, the detection rate of the photodetector is increased by parallel connection of several photoelectric units.
【學(xué)位授予單位】：中國地質(zhì)大學(xué)(北京)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN23

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