GLSI多層銅布線CMP后清洗顆粒去除的研究
發(fā)布時(shí)間：2018-07-14 09:12
【摘要】：隨著極大規(guī)模集成電路(GLSI)特征尺寸不斷縮小,雜質(zhì)對(duì)器件性能的影響日益嚴(yán)重,對(duì)清洗的要求也不斷提高。目前,清洗已成為集成電路制造過程中最重要的工序之一。顆粒能形成針孔、小島等缺陷,造成器件短路、斷路,嚴(yán)重影響器件性能甚至導(dǎo)致器件失效,是主要清洗對(duì)象之一。因此,顆粒去除的研究對(duì)于GLSI多層銅布線化學(xué)機(jī)械拋光(CMP)后清洗技術(shù)的發(fā)展、清洗劑的研發(fā)、確保CMP工藝的成功有著重要的意義。本論文系統(tǒng)地分析了CMP后清洗在集成電路制造過程中的重要地位,討論了主流清洗技術(shù)的優(yōu)勢(shì)與缺點(diǎn),結(jié)合集成電路行業(yè)對(duì)清洗的要求探討了清洗技術(shù)發(fā)展趨勢(shì);并對(duì)CMP后清洗中常見的SiO2顆粒缺陷的吸附和去除機(jī)理做了系統(tǒng)的研究。重點(diǎn)研究FA/O螯合劑和活性劑在控制顆粒吸附、改變顆粒吸附狀態(tài)及去除顆粒等方面的作用。本論文通過改變拋光液組分及相關(guān)拋光工藝參數(shù)等方法,研究其對(duì)Si O2顆粒吸附的影響,結(jié)果表明拋光液中硅溶膠含量越高、氧化劑含量越高,CMP后晶圓表面吸附的SiO2顆粒越多;活性劑含量越高、轉(zhuǎn)速越高,晶圓表面吸附的Si O2顆粒越少。通過實(shí)驗(yàn)驗(yàn)證分析了清洗劑主要成分FA/O II型螯合劑和FA/O I型活性劑對(duì)顆粒的去除作用:FA/O II型螯合劑和FA/O I型活性劑均對(duì)顆粒清洗有促進(jìn)作用,濃度越高,顆粒的清洗效果越好;清洗劑配比優(yōu)化結(jié)果表明,當(dāng)FA/O II型螯合劑濃度為100ppm,FA/O I型活性劑濃度接近3000ppm時(shí),SiO2顆粒得到有效去除,且晶圓表面缺陷總數(shù)為946,接近工業(yè)應(yīng)用要求。
[Abstract]:As the size of the large scale integrated circuit (GLSI) is shrinking, the influence of impurities on the performance of the device is becoming more and more serious, and the requirements for cleaning are also increasing. At present, cleaning has become one of the most important processes in the manufacturing process of integrated circuits. Particles can form pinholes, small islands and other defects, resulting in short circuit and circuit breakage, which seriously affect the device character. It is one of the main cleaning objects that can even cause the failure of the device. Therefore, the research of particle removal is of great significance to the development of the cleaning technology after GLSI multi-layer copper wiring chemical mechanical polishing (CMP) and the research and development of the cleaning agent to ensure the success of the CMP process. This paper systematically analyzes the weight of the cleaning in the integrated circuit manufacturing process after the CMP cleaning. The advantages and disadvantages of the mainstream cleaning technology are discussed, and the development trend of cleaning technology is discussed in the light of the requirements of the integrated circuit industry for cleaning. The mechanism of the adsorption and removal of the common SiO2 particle defects in the CMP cleaning is systematically studied. The FA/O chelating agent and the active agent are mainly studied to control the particle adsorption and change the particle absorption. The effect on the adsorption of Si O2 particles is studied by changing the composition of the polishing liquid and the parameters of the polishing process. The results show that the higher the content of the silica sol is, the higher the content of the oxidizer, the more SiO2 particles adsorbed on the surface of the wafer after CMP, the higher the content of the activator, the more the active agent is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more speed the speed is. The less Si O2 particles adsorbed on the wafer surface, the less the particles were adsorbed on the wafer surface. Through the experiment, the removal effect of the main components FA/O II chelating agent and FA/O I active agent on the particles was analyzed. The FA/O II chelating agent and FA/O I type active agent all have the promotion effect on the particle cleaning, the higher the concentration, the better the cleaning effect of the particles; the optimization result of the cleaning agent ratio. It is shown that when the concentration of FA/O II chelating agent is 100ppm and the concentration of FA/O I type activator is close to 3000ppm, the SiO2 particles are effectively removed and the total number of defects on the wafer surface is 946, which is close to the requirements of industrial application.
【學(xué)位授予單位】：河北工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN405.97
本文編號(hào)：2121175
[Abstract]:As the size of the large scale integrated circuit (GLSI) is shrinking, the influence of impurities on the performance of the device is becoming more and more serious, and the requirements for cleaning are also increasing. At present, cleaning has become one of the most important processes in the manufacturing process of integrated circuits. Particles can form pinholes, small islands and other defects, resulting in short circuit and circuit breakage, which seriously affect the device character. It is one of the main cleaning objects that can even cause the failure of the device. Therefore, the research of particle removal is of great significance to the development of the cleaning technology after GLSI multi-layer copper wiring chemical mechanical polishing (CMP) and the research and development of the cleaning agent to ensure the success of the CMP process. This paper systematically analyzes the weight of the cleaning in the integrated circuit manufacturing process after the CMP cleaning. The advantages and disadvantages of the mainstream cleaning technology are discussed, and the development trend of cleaning technology is discussed in the light of the requirements of the integrated circuit industry for cleaning. The mechanism of the adsorption and removal of the common SiO2 particle defects in the CMP cleaning is systematically studied. The FA/O chelating agent and the active agent are mainly studied to control the particle adsorption and change the particle absorption. The effect on the adsorption of Si O2 particles is studied by changing the composition of the polishing liquid and the parameters of the polishing process. The results show that the higher the content of the silica sol is, the higher the content of the oxidizer, the more SiO2 particles adsorbed on the surface of the wafer after CMP, the higher the content of the activator, the more the active agent is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more speed the speed is. The less Si O2 particles adsorbed on the wafer surface, the less the particles were adsorbed on the wafer surface. Through the experiment, the removal effect of the main components FA/O II chelating agent and FA/O I active agent on the particles was analyzed. The FA/O II chelating agent and FA/O I type active agent all have the promotion effect on the particle cleaning, the higher the concentration, the better the cleaning effect of the particles; the optimization result of the cleaning agent ratio. It is shown that when the concentration of FA/O II chelating agent is 100ppm and the concentration of FA/O I type activator is close to 3000ppm, the SiO2 particles are effectively removed and the total number of defects on the wafer surface is 946, which is close to the requirements of industrial application.
【學(xué)位授予單位】：河北工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN405.97
【參考文獻(xiàn)】
相關(guān)期刊論文 前4條
1 王銳延;半導(dǎo)體晶圓自動(dòng)清洗設(shè)備[J];電子工業(yè)專用設(shè)備;2004年09期
2 張士偉;;半導(dǎo)體晶圓的污染雜質(zhì)及清洗技術(shù)[J];電子工業(yè)專用設(shè)備;2014年07期
3 唐雪林,顧凱峰,姚保綱;刷洗對(duì)硅單晶拋光片表面質(zhì)量的影響[J];上海有色金屬;1998年03期
4 高超群;李全寶;劉茂哲;景玉鵬;;綠色二氧化碳超臨界清洗設(shè)備[J];微細(xì)加工技術(shù);2008年04期
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