EMCCD電子倍增增益校正方法研究
發(fā)布時間:2018-07-05 07:26
本文選題:EMCCD + 增益校正 ; 參考:《昆明理工大學(xué)》2015年碩士論文
【摘要】:由于電子倍增電荷耦合器件(EMCCD)獨特的電荷倍增機制,特別合適于對亮度極微弱的目標進行探測和成像。但是由于EMCCD在使用的過程中,電子倍增增益會發(fā)生改變,從而影響EMCCD成像系統(tǒng)的成像質(zhì)量。為了提高EMCCD成像系統(tǒng)的性能,研制具有增益校正功能的EMCCD成像系統(tǒng),在本課題研究期間,我們對TI公司的EMCCD的倍增過程進行了深入的分析和研究,提出了確定EMCCD電子倍增增益的方法,并設(shè)計了增益校正電路。在本學(xué)位論文中,首先提出了一種確定EMCCD增益的方法,該方法通過分析Robbins提出的增益模型,利用TI公司提供的EMCCD器件(TC285和TC253)數(shù)據(jù)資料,分別計算這兩種器件在該模型中的參數(shù)c值,并用多元回歸分析的方法建立了這兩種器件的關(guān)鍵參數(shù)c的數(shù)學(xué)模型,從而確定了EMCCD增益校正模型的表達式。該增益校正模型可以準確計算經(jīng)過一定老化時間后不同的溫度條件下的電子信號通過EMCCD多級級聯(lián)倍增寄存器的平均增益,進而可以用于EMCCD成像系統(tǒng)的增益調(diào)整和校正。然后針對EMCCD增益校正模型,根據(jù)增益校正模擬電路的整體設(shè)計和要求,分別敘述了各模擬單元電路的工作原理,對關(guān)鍵模擬器件進行選型,利用Pspice軟件對主要單元電路進行原理圖的設(shè)計和仿真,整合各單元電路,對增益校正模擬電路系統(tǒng)原理圖進行Pspice仿真,仿真計算結(jié)果和增益校正模型的理論計算結(jié)果基本一致。對于增益校正數(shù)字電路,我們采用VHDL編程與Altera提供的IP核相結(jié)合的方式,設(shè)計了基于CORDIC算法的對數(shù)、指數(shù)變換器,利用IP核實現(xiàn)乘法、除法、反相等功能。通過功能仿真,實現(xiàn)了各數(shù)字單元電路的精確運算。連接各單元電路,比較增益校正數(shù)字電路的仿真結(jié)果與增益校正模型的理論計算結(jié)果,二者幾乎一致。最后,從數(shù)據(jù)處理速度、仿真輸出結(jié)果的精度、資源消耗和實現(xiàn)的難易程度幾個方面分析比較EMCCD增益校正模擬電路和EMCCD增益校正數(shù)字電路系統(tǒng)性能,結(jié)果表明,EMCCD電子倍增增益校正數(shù)字電路更適用于EMCCD成像系統(tǒng)的增益校正。
[Abstract]:Due to the unique charge doubling mechanism of the electron multiplication charge coupled device (EMCCD), it is especially suitable for detecting and imaging targets with very weak brightness. However, during the use of EMCCD, the gain of electron multiplication will change, which will affect the imaging quality of EMCCD imaging system. In order to improve the performance of EMCCD imaging system, an EMCCD imaging system with gain correction function is developed. During this research period, we deeply analyzed and studied the multiplication process of EMCCD produced by TI Company. A method for determining the electron multiplication gain of EMCCD is presented, and a gain correction circuit is designed. In this dissertation, a method to determine the gain of EMCCD is proposed. By analyzing the gain model proposed by Robbins, the data of EMCCD devices (TC285 and TC253) provided by TI are used. The parameter c of the two devices in the model is calculated, and the mathematical model of the key parameter c of the two devices is established by multivariate regression analysis, and the expression of the EMCCD gain correction model is determined. The gain correction model can accurately calculate the average gain of the electronic signal passing through the EMCCD multistage cascade multiplication register at different temperatures after a certain aging time, and then can be used for the gain adjustment and correction of the EMCCD imaging system. Then according to the EMCCD gain correction model, according to the overall design and requirements of the gain correction analog circuit, the working principle of each analog cell circuit is described, and the key analog devices are selected. The principle diagram of the main unit circuit is designed and simulated by using PSpice software. The system schematic diagram of the gain correction analog circuit is simulated by PSpice. The simulation results are basically consistent with the theoretical calculation results of the gain correction model. For the gain correction digital circuit, we design the logarithmic and exponential converter based on Cordic algorithm by combining VHDL programming with IP core provided by Altera. We use IP core to realize multiplication, division and inverse equality. Through the function simulation, the precise operation of each digital unit circuit is realized. The simulation results of the gain correction digital circuits are compared with the theoretical results of the gain correction model. Finally, the performance of EMCCD gain correction analog circuit and EMCCD gain correction digital circuit system are analyzed and compared from the data processing speed, the precision of simulation output, the resource consumption and the degree of difficulty in implementation. The results show that the EMCCD digital circuit is more suitable for the gain correction of EMCCD imaging system.
【學(xué)位授予單位】:昆明理工大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TN386.5
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