本文選題：功率放大器 + 無線通信系統(tǒng)�。� 參考：《上海交通大學(xué)》2015年碩士論文

【摘要】：隨著近年來無線通信系統(tǒng)的不斷發(fā)展,人們對(duì)于無線通信設(shè)備的需求越來越大,對(duì)于其性能要求也越來越高。無線通信系統(tǒng),例如無線局域網(wǎng)(WLAN)、手機(jī)等等,已經(jīng)進(jìn)入到了我們生活中的方方面面。功率放大器作為無線收發(fā)系統(tǒng)中能量消耗最大的環(huán)節(jié),在很大程度上影響著整個(gè)系統(tǒng)的性能好壞。目前的功率放大器較多的都是采用化合物半導(dǎo)體工藝制造的,導(dǎo)致其很難與其它基于CMOS工藝的模塊集成在同一塊芯片上。這就為我們使用CMOS工藝設(shè)計(jì)功率放大器帶來了極大的動(dòng)力。SOI CMOS工藝與傳統(tǒng)的BULK CMOS工藝相比,在功率放大器的設(shè)計(jì)中,有著很多的優(yōu)點(diǎn),例如更小的寄生參數(shù),更好的隔絕度以及方便的版圖繪制等等。此次設(shè)計(jì)中,我們將使用IBM 0.18μm SOI CMOS工藝來完成設(shè)計(jì)與仿真。本文首先介紹了功率放大器的背景知識(shí),包括功率放大器的性能指標(biāo)、分類以及提升性能的方法。然后介紹此次設(shè)計(jì)中使用的SOI CMOS工藝,以及其與傳統(tǒng)BULK CMOS工藝的優(yōu)勢(shì)。最后詳細(xì)介紹兼顧效率和線形度的AB類功率放大器與強(qiáng)調(diào)效率的F類功率放大器的設(shè)計(jì)與仿真過程。
[Abstract]:With the development of wireless communication system in recent years, the demand for wireless communication equipment is increasing, and the demand for its performance is becoming higher and higher. Wireless communication systems, such as wireless local area networks (WLAN), mobile phones and so on, have entered every aspect of our life. As the most energy-consuming link in wireless transceiver system, power amplifier affects the performance of the whole system to a great extent. At present, most power amplifiers are fabricated by compound semiconductor process, which makes it difficult to integrate with other CMOS process modules on the same chip. This brings us great power to design power amplifiers using CMOS process. Compared with traditional bulk CMOS process, SOI CMOS process has many advantages in power amplifier design, such as smaller parasitic parameters. Better isolation and convenient layout drawing and so on. In this design, we will use IBM 0.18 渭 m SOI CMOS process to complete the design and simulation. In this paper, the background of power amplifier is introduced, including performance index, classification and method of improving performance. Then the SOI CMOS process used in this design and its advantages over the traditional bulk CMOS process are introduced. In the end, the design and simulation of class AB power amplifier and F type power amplifier with both efficiency and linearity are introduced in detail.
【學(xué)位授予單位】：上海交通大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.75

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