本文選題：微測(cè)輻射熱計(jì) + 20μm×20μm像元�。� 參考：《電子科技大學(xué)》2015年碩士論文

【摘要】：微測(cè)輻射熱計(jì)作為一種非制冷紅外探測(cè)器,因?yàn)槠涔牡?便于攜帶,性能優(yōu)良,價(jià)格低廉等優(yōu)點(diǎn)而廣泛應(yīng)用到軍事和民用等市場(chǎng)。目前非制冷紅外器件越來(lái)越朝著大規(guī)模高密度紅外焦平面探測(cè)器的凝視方向發(fā)展,像元大小從較早的65μm×65μm到現(xiàn)在的15μm×15μm左右,像元結(jié)構(gòu)也由傳統(tǒng)的的單層L型結(jié)構(gòu)到目前的雙層傘形,雙層S型,甚至三層結(jié)構(gòu)發(fā)展。由于受制于國(guó)外技術(shù)和設(shè)備的封鎖,20μm及以下器件在國(guó)內(nèi)報(bào)道極少,且考慮到本實(shí)驗(yàn)室的工藝條件,本文研究像元尺寸定為20μm×20μm,像元結(jié)構(gòu)則選擇目前市場(chǎng)上應(yīng)用廣泛的單層L型,雙層傘形,雙層S型微測(cè)輻射熱計(jì)。本文采用專業(yè)的微機(jī)電系統(tǒng)(MEMS)軟件Intellisuite分別建立了像元大小為20μm×20μm單層L型,雙層傘形,雙層S型三種微測(cè)輻射熱計(jì)的三維有限元分析模型。在此基礎(chǔ)上,利用數(shù)學(xué)仿真軟件Matlab建立了上述三種結(jié)構(gòu)的紅外吸收模型。以高性能指標(biāo)(在60 Hz幀頻下,NETD小于50 mk時(shí)對(duì)應(yīng)的熱導(dǎo)在10-8W/K量級(jí),熱時(shí)間常數(shù)小于8 ms)為參考,對(duì)三種結(jié)構(gòu)分別進(jìn)行了光學(xué)性能仿真以及器件理論熱導(dǎo)計(jì)算,通過(guò)優(yōu)化各層膜厚,上下諧振腔高度等參數(shù),獲得了較好的光學(xué)性能以及較小的器件熱導(dǎo)。隨后本文對(duì)三種結(jié)構(gòu)的三維模型進(jìn)行了力學(xué)性能優(yōu)化設(shè)計(jì),通過(guò)調(diào)整各材料的內(nèi)應(yīng)力、膜厚、諧振腔高度等參數(shù),將器件的形變量控制在一個(gè)較小的范圍內(nèi),研究發(fā)現(xiàn)影響其力學(xué)平衡的主要因素是支撐層和鈍化層,它們對(duì)結(jié)構(gòu)的力學(xué)性能起主要支撐作用。以這三種結(jié)構(gòu)的光學(xué)性能,力學(xué)性能,以及熱導(dǎo)研究為依據(jù),確定了上述三種微測(cè)輻射熱計(jì)的結(jié)構(gòu)參數(shù)。隨后再對(duì)三種結(jié)構(gòu)進(jìn)行了動(dòng)態(tài)熱學(xué)有限元仿真,研究了其器件熱導(dǎo)和熱時(shí)間常數(shù);而微測(cè)輻射熱計(jì)工作時(shí),是需要加載偏置的,本文首次模擬了三種結(jié)構(gòu)的實(shí)際工作狀態(tài),對(duì)其進(jìn)行了熱電耦合性能仿真,研究了其有效熱導(dǎo)和熱時(shí)間常數(shù);在此研究基礎(chǔ)上,分析了器件熱導(dǎo)、有效熱導(dǎo),偏置電流的關(guān)系,根據(jù)高性能指標(biāo)的要求,推出了其電流范圍。通過(guò)加載不同的電流和相同的熱輻射對(duì)器件進(jìn)行熱電耦合有限元仿真,考慮到熱時(shí)間常數(shù),有效熱導(dǎo)和電壓閾值,可獲得三種結(jié)構(gòu)各自的最優(yōu)化電流
[Abstract]:As a kind of uncooled infrared detector, microbolometer is widely used in military and civil markets because of its advantages of low power consumption, easy to carry, good performance and low price. At present, uncooled infrared devices are becoming more and more oriented towards the staring direction of large-scale high-density infrared focal plane detectors. The pixel size ranges from 65 渭 m 脳 65 渭 m to about 15 渭 m 脳 15 渭 m. The pixel structure is also developed from the traditional single-layer L-type structure to the present double-layer umbrella-shaped, double-layer S-shaped and even three-layer structures. Because there are very few reports in China about the blockage of 20 渭 m and less devices restricted by foreign technology and equipment, and considering the technological conditions of our laboratory, the size of the pixel is set at 20 渭 m 脳 20 渭 m, and the pixel structure chooses the single layer L type, which is widely used in the market at present. Double-layer umbrella, double-layer S-type microbolometer. In this paper, three dimensional finite element analysis models of 20 渭 m 脳 20 渭 m single-layer L-type, double-layer umbrella-shaped and double-layer S-type microbolometer are established by using Intellisuite, a special MEMS software. On this basis, the infrared absorption model of the above three structures is established by using the mathematical simulation software Matlab. With the reference of high performance index (the corresponding thermal conductivity is 10 ~ (-8) W / K and the thermal time constant is less than 8 Ms when the NETD is less than 50 mk at 60 Hz frame rate), the optical performance simulation and the theoretical thermal conductivity calculation of the three structures are carried out respectively. By optimizing the parameters such as the thickness of each layer and the height of the upper and lower resonators, the better optical properties and the smaller thermal conductivity of the devices are obtained. In this paper, the mechanical properties of the three kinds of structures are optimized. By adjusting the internal stress, the thickness of the film and the height of the resonator, the deformation of the device is controlled in a small range. It is found that the main factors affecting the mechanical equilibrium of the structure are the supporting layer and the passivating layer, which play a major supporting role in the mechanical properties of the structure. Based on the optical properties, mechanical properties and thermal conductivity of the three structures, the structural parameters of the three microbolometers are determined. Then the dynamic thermal finite element simulation of the three structures is carried out, and the thermal conductivity and thermal time constants of the three structures are studied, while the load bias is required for the work of the microbolometer, and the actual working state of the three structures is simulated for the first time in this paper. The effective thermal conductivity and thermal time constant are studied, and the relationship among thermal conductivity, effective thermal conductivity and bias current of the device is analyzed, according to the requirements of high performance index, the thermal conductivity and thermal time constant of the device are simulated, and the relationship between thermal conductivity, effective thermal conductivity and bias current of the device is analyzed according to the requirements of the high performance index. The current range is deduced. The thermoelectric coupling finite element simulation of the device is carried out by loading different current and the same thermal radiation. Considering the thermal time constant, effective thermal conductivity and voltage threshold, the optimal current of each of the three structures can be obtained.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN215

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