本文選題：光電探測芯片 + 光探測器　； 參考：《電子科技大學(xué)》2015年碩士論文

【摘要】：現(xiàn)場總線技術(shù)將工業(yè)現(xiàn)場中的各種設(shè)備通過串行通信的方式連接在一起,這使得地線構(gòu)成接地環(huán)路。接地環(huán)路會感應(yīng)外界干擾,影響信號傳輸甚至損壞設(shè)備。高速數(shù)字光電耦合器把輸入電信號轉(zhuǎn)換為光信號,再把光信號轉(zhuǎn)換為輸出電信號,從而實(shí)現(xiàn)了輸入、輸出完全電氣隔離,同時(shí)不影響信號的傳輸,因而成為這類系統(tǒng)中理想的隔離器件。目前市場上的高速數(shù)字光耦大多屬于進(jìn)口。因此,開發(fā)一款自主設(shè)計(jì)的高速數(shù)字光電耦合器有著重要的研發(fā)意義和廣闊的市場前景。另外,高速數(shù)字光電耦合器也廣泛用于軍事和航天領(lǐng)域。在此類應(yīng)用環(huán)境下,光電耦合器面臨各種輻射效應(yīng)的威脅,容易受到損傷,導(dǎo)致可靠性降低、使用壽命縮短,甚至完全失效。因此,具有抗輻照能力的高速數(shù)字光電耦合器更具吸引力。高速數(shù)字光電耦合器由高速LED與光電探測芯片組成。光電探測芯片是其核心模塊,性能好壞直接決定了光電耦合器的數(shù)據(jù)傳輸質(zhì)量。因此,設(shè)計(jì)一款具有抗輻照能力的高速數(shù)字光電耦合器的核心,就是設(shè)計(jì)抗輻照加固光電探測芯片。本文介紹了高速數(shù)字光電耦合器數(shù)據(jù)傳輸基本理論、各個(gè)主要模塊原理,以及抗輻照加固設(shè)計(jì)方法等。在此基礎(chǔ)上,首先設(shè)計(jì)了一款用于10MBd光電耦合器具有抗輻照能力的光電探測芯片。而后采用均衡器技術(shù)和差分光探測器技術(shù),又設(shè)計(jì)了兩款用于30MBd傳輸速率光電耦合器的光電探測芯片。論文重點(diǎn)論述了利用Matlab工具和Verilog-A語言建立光探測器小信號模型的方法;在工藝廠商提供的標(biāo)準(zhǔn)工藝庫基礎(chǔ)上快速建立環(huán)柵MOS單元庫的方法;通過局部負(fù)反饋擴(kuò)展帶寬的跨阻放大器結(jié)構(gòu);利用sisotool工具確定均衡器參數(shù)的方法等。最終,10MBd抗輻照光電探測芯片使光電耦合器輸入高電流范圍2~6mA,靜態(tài)電流4.2mA。負(fù)載電阻350?、電容15pF時(shí),輸出高、低電平傳播延遲分別為39ns和36ns,脈寬失真小于15ns。環(huán)柵MOS和DTMOS加固等措施使芯片抗輻照能力有所提升。采用均衡器技術(shù)的30MBd光電探測芯片使光電耦合器輸入高電流范圍2~6mA,靜態(tài)電流4.9mA。輸出高、低電平傳播延遲分別為21ns和20ns,脈寬失真小于15ns。采用差分光探測器的30MBd光電探測芯片使光電耦合器輸入高電流范圍6~18mA,靜態(tài)電流3.7mA。輸出高、低電平傳播延遲分別為23ns和16ns,脈寬失真小于30ns。
[Abstract]:The technology of fieldbus connects all kinds of equipments in industrial field by serial communication, which makes ground wire form earthing loop. Earthing loop will induce external interference, affect signal transmission and even damage equipment. The high-speed digital photocoupler converts the input signal into the optical signal, and then converts the optical signal into the output signal, thus realizing the complete electrical isolation of the input and output without affecting the transmission of the signal. Therefore, it is an ideal isolating device in this kind of system. At present, the high-speed digital coupling on the market is mostly imported. Therefore, the development of a self-designed high-speed digital photocoupler has important research and development significance and broad market prospects. In addition, high-speed digital photocouplers are also widely used in military and aerospace fields. In this kind of application environment, the photocoupler is threatened by various radiation effects and is vulnerable to damage, which leads to the reduction of reliability, the shortening of service life, and even the complete failure. Therefore, the high-speed digital photocoupler with anti-radiation ability is more attractive. High-speed digital photocoupler is composed of high-speed LED and photoelectric detection chip. Photoelectric detection chip is its core module, and its performance directly determines the data transmission quality of photocoupler. Therefore, the core of designing a high speed digital photocoupler with anti-irradiation ability is to design an anti-irradiation and strengthening photodetector chip. This paper introduces the basic theory of high-speed digital photocoupler data transmission, the principle of each main module, and the design method of anti-irradiation reinforcement. On this basis, a photodetector chip for 10 MBd photocoupler is designed. Then using equalizer technology and differential photodetector technology, two photoelectric detection chips for 30 MBd transmission rate photocoupler are designed. In this paper, the method of establishing the small signal model of photodetector with Matlab and Verilog-A language is discussed, and the method of establishing the MOS cell library of ring gate based on the standard process library provided by the process manufacturer is discussed. The structure of transresistance amplifier is extended by local negative feedback, and the method of determining the parameters of equalizer by using sisotool tool is presented. Finally, the 10MBd anti-irradiation photodetector chip makes the photocoupler input the high current range of 2mA2mAand the static current of 4.2mA. When the load resistance is 350 nm and the capacitance is 15pF, the propagation delay of high output and low level are 39ns and 36ns, respectively, and the pulse width distortion is less than 15ns. The ring gate MOS and DTMOS reinforcement can improve the radiation resistance of the chip. The 30 MBd photoelectric detection chip using equalizer technology makes the optocoupler input high current range of 2 ~ 6 Ma and static current of 4.9 Ma. The high and low level propagation delays are 21ns and 20ns, respectively, and the pulse width distortion is less than 15ns. The 30 MBd photodetector chip of differential photodetector makes the optocoupler input high current range of 6 ~ 18 Ma and static current of 3.7 Ma. The high and low level propagation delays are 23ns and 16ns, respectively, and the pulse width distortion is less than 30ns.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN402

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本文編號：2095164