本文選題：基片集成波導 + 帶通濾波器�。� 參考：《西安電子科技大學》2015年碩士論文

【摘要】：基片集成波導(Substrate Integrated Waveguide,SIW)作為一種新的導波結(jié)構(gòu),不但繼承了金屬矩形波導和微帶線的低輻射損耗、高品質(zhì)因數(shù)、高功率容量、體積小、重量輕等優(yōu)勢,而且易于加工和平面集成。這些優(yōu)點使SIW技術(shù)在學術(shù)界及工業(yè)界都得到了極其廣泛的應用。因此,基于SIW技術(shù)設計高性能濾波器成為當今微波濾波器領(lǐng)域的重要研究方向。首先,本文系統(tǒng)的介紹了微波濾波器設計的主要參數(shù)及主要方法、SIW技術(shù)的基本理論及基于SIW技術(shù)的各類微波器件;重點討論了SIW結(jié)構(gòu)的傳輸特性以及SIW與微帶線過渡結(jié)構(gòu)的設計,并仿真分析了多種共面過渡結(jié)構(gòu)的傳輸特性,為后文SIW帶通濾波器的研究奠定基礎(chǔ)。然后,本文提出了幾種常見的缺陷地結(jié)構(gòu)(DGS),并重點分析了曲折型缺陷地結(jié)構(gòu)的等效電路和傳輸特性。在此基礎(chǔ)上,結(jié)合SIW結(jié)構(gòu)的高通特性和DGS單元的低通特性,實現(xiàn)了一種基于曲折型缺陷地結(jié)構(gòu)的帶通濾波器,具備小型化、易加工、低損耗、高頻率選擇性等特點。文章最后提出了一種基于雙平面諧振元(DP-RC)技術(shù)設計高性能帶通濾波器的方法。該DP-RC濾波器在SIW結(jié)構(gòu)的基礎(chǔ)上,兼顧SIW結(jié)構(gòu)上表面和金屬接地面的開發(fā),通過在SIW結(jié)構(gòu)的上表面加載U型槽,下表面蝕刻H型分形缺陷地結(jié)構(gòu)構(gòu)成。然后根據(jù)最優(yōu)仿真結(jié)果加工出了相應的DP-RC帶通濾波器實物,并用矢網(wǎng)對該DP-RC濾波器的傳輸特性進行測量。實測結(jié)果與仿真結(jié)果吻合良好,也進一步證明運用雙平面諧振元技術(shù)設計帶通濾波器這一思路的正確性和可靠性。與傳統(tǒng)的SIW濾波器相比,本文提出的DP-RC帶通濾波器能夠大幅度提高濾波器的整體性能,并且減少了濾波電路的占用面積,具有一定的工程應用價值。
[Abstract]:As a new guided wave structure, substrate Integrated waveguide (SIW) not only inherits the advantages of low radiation loss, high quality factor, high power capacity, small volume and light weight of metal rectangular waveguide and microstrip line, but also is easy to process and integrate with plane. These advantages make SIW technology widely used in academia and industry. Therefore, the design of high performance filters based on SIW technology has become an important research direction in the field of microwave filters. Firstly, this paper systematically introduces the main parameters and methods of microwave filter design and the basic theory of SIW technology and all kinds of microwave devices based on SIW technology. The transmission characteristics of SIW structure and the design of SIW and microstrip line transition structure are discussed, and the transmission characteristics of several coplanar transition structures are simulated and analyzed, which lays a foundation for the study of SIW band-pass filter later on. Then, several common defect ground structures (DGS) are proposed, and the equivalent circuit and transmission characteristics of zigzag ground structures are analyzed. On this basis, combining the high pass characteristic of SIW structure and the low pass characteristic of DGS unit, a kind of bandpass filter based on zigzag defect ground structure is realized, which has the characteristics of miniaturization, easy processing, low loss and high frequency selectivity. In the end, a high performance bandpass filter based on biplane resonant element (DP-RC) is proposed. On the basis of SIW structure, the DP-RC filter takes account of the development of the upper surface and metal ground of SIW structure. By loading U-shaped groove on the upper surface of SIW structure, the structure of H-type fractal defect is etched on the lower surface. Then the DP-RC band-pass filter is processed according to the optimal simulation results and the transmission characteristics of the DP-RC filter are measured by vector network. The measured results are in good agreement with the simulation results, which further proves the correctness and reliability of the band-pass filter design using the biplane resonant element technique. Compared with the traditional SIW filter, the DP-RC bandpass filter proposed in this paper can greatly improve the overall performance of the filter and reduce the occupied area of the filter circuit.
【學位授予單位】：西安電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN713.5

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相關(guān)期刊論文 前2條

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本文編號：2093993