本文選題：AZO籽晶層薄膜 + ZnO　； 參考：《天津理工大學(xué)》2017年碩士論文

【摘要】：ZnO是典型的n型寬禁帶半導(dǎo)體,具有優(yōu)異的光學(xué)和電學(xué)性質(zhì)。一維ZnO納米棒陣列(ZnO NRs)具有比表面積大,電子定向傳輸?shù)葍?yōu)勢,被廣泛應(yīng)用于紫外光探測器。但是ZnO NRs表面和體內(nèi)缺陷較多,作為載流子捕獲中心,不利于載流子傳輸�；赯nO NRs異質(zhì)結(jié)的紫外光探測器性能如光靈敏度、光響應(yīng)速度、光響應(yīng)率等有待進(jìn)一步提高。有效降低ZnO NRs缺陷態(tài)和表面態(tài),提高載流子傳輸是ZnO NRs基光探測器亟待解決的問題。本論文利用簡單的化學(xué)浴沉積法制備ZnO NRs,利用Al摻雜ZnO籽晶層薄膜(AZO)調(diào)控ZnO NRs形貌、結(jié)晶質(zhì)量以及光電性能。將ZnO NRs分別與Au電極構(gòu)筑肖特基結(jié),與CuSCN和MoS_2納米片復(fù)合構(gòu)筑異質(zhì)結(jié),利用結(jié)區(qū)內(nèi)建電場促使光生載流子有效分離。具體研究內(nèi)容和結(jié)果如下:(1)在不同Al摻雜濃度的AZO籽晶層薄膜上生長ZnO NRs,研究AZO籽晶層薄膜對ZnO NRs形貌、結(jié)晶質(zhì)量以及光電性能的影響,進(jìn)而研究Au/ZnO NRs/AZO肖特基結(jié)光電響應(yīng)特性。研究表明Al摻雜濃度為0.5%的AZO籽晶層(AZO(0.5%))薄膜表面粗糙度小,透光率高且載流子濃度大。AZO(0.5%)籽晶層薄膜生長的ZnO NRs比較致密、結(jié)晶質(zhì)量較好、缺陷較少、紫外透光性高、載流子濃度大、表面耗盡區(qū)窄。致密的ZnO NRs與Au電極緊密的接觸降低了漏電流。Au/ZnO NRs/AZO肖特基結(jié)在+2 V偏壓,360 nm(3.2 mW/cm2)紫外光照下呈現(xiàn)光電響應(yīng)特性,并且AZO(0.5%)籽晶層薄膜生長ZnO NRs構(gòu)筑的肖特基結(jié)光電流和光響應(yīng)率較大。(2)在AZO籽晶層薄膜生長的ZnO NRs上電化學(xué)沉積CuSCN,構(gòu)筑p-CuSCN/n-ZnO NRs異質(zhì)結(jié),研究異質(zhì)結(jié)的紫外光電響應(yīng)特性。研究發(fā)現(xiàn)電化學(xué)沉積的CuSCN顆粒呈類金字塔形,且完全覆蓋了ZnO NRs表面。CuSCN薄膜避免了Au電極和ZnO NRs直接接觸,減小了異質(zhì)結(jié)的漏電流。電學(xué)測試結(jié)果表明CuSCN/ZnO NRs異質(zhì)結(jié)具有整流特性,光照下有光伏效應(yīng),在無外加電場的驅(qū)動(dòng)下可以實(shí)現(xiàn)自驅(qū)動(dòng)光響應(yīng)。無外加電場驅(qū)動(dòng)下,CuSCN/ZnO NRs異質(zhì)結(jié)對紫外光具有很好的光譜選擇性,并且AZO(0.5%)籽晶層薄膜生長ZnO NRs構(gòu)筑的CuSCN/ZnO NRs異質(zhì)結(jié)自驅(qū)動(dòng)光電流較大,響應(yīng)率約為22.5 m A/W,這可歸因于增強(qiáng)的ZnO NRs紫外光吸收和良好的載流子傳輸特性。(3)在AZO(0.5%)籽晶層薄膜生長的ZnO NRs上旋涂液相剝離獲得的MoS_2納米片,構(gòu)筑MoS_2/ZnO NRs異質(zhì)結(jié),研究其光電響應(yīng)特性。研究發(fā)現(xiàn)MoS_2納米片垂直站立于ZnO NRs表面,異質(zhì)結(jié)呈現(xiàn)紫外光、紅光波段光電響應(yīng)特性。MoS_2納米片層數(shù)越少,電子沿層內(nèi)傳輸?shù)耐ǖ涝蕉?MoS_2納米片與ZnO NRs表面的接觸電阻越小,異質(zhì)結(jié)在紫外區(qū)和紅光區(qū)呈現(xiàn)出的光電流、光響應(yīng)率越大。
[Abstract]:ZnO is a typical n-type wide band gap semiconductor with excellent optical and electrical properties. One-dimensional ZnO nanorod arrays (ZnO NRs) are widely used in UV detectors for their advantages of large specific surface area and directional electron transport. However, there are many defects in the surface and body of ZnO NRs, which are not conducive to carrier transport as carrier trapping centers. The performance of UV photodetectors based on ZnO NRS heterojunction, such as photosensitivity, photoresponse speed and photoresponsivity, need to be further improved. It is an urgent problem for ZnO NRs based photodetectors to reduce the defect states and surface states of ZnO NRs effectively and improve the carrier transport. In this paper, ZnO NRswere prepared by simple chemical bath deposition. The morphology, crystallization quality and optoelectronic properties of ZnO NRs were regulated by Al doped ZnO seed layer thin films (AZO). Schottky junctions of ZnO NRs with au electrodes and heterojunction with CuSCN and MoS2 nanochips were constructed respectively. The photocarriers were effectively separated by electric field in the junction region. The main contents and results are as follows: (1) ZnO NRs were grown on different Al doped AZO seed films. The effects of AZO seed films on the morphology, crystallization quality and photoelectric properties of ZnO NRs were investigated, and the photoelectric response characteristics of Au/ ZnO NRsr / AZO Schottky junctions were studied. The results show that the AZO seed layer (AZO (0.5%) with 0.5% Al doping has a low surface roughness, a high transmittance and a high carrier concentration. The ZnO NRs grown by the seed layer of 0.5% AZO (0.5%) are compact, the quality of crystallization is better, the defect is less, and the UV transmittance is high. The carrier concentration is high and the surface depletion area is narrow. The close contact between the dense ZnO NRs and the au electrode reduces the leakage current. Aur / ZnO NRs / AZO Schottky junctions exhibit photoelectric response under 2 V bias at 360 nm (3.2 MW / cm 2) UV light. Moreover, the Schottky junction constructed by ZnO NRs grown by AZO (0.5%) seed layer film has a high photocurrent and photoresponse. (2) CuSCN was deposited on ZnO NRs grown in AZO seed layer film, and p-CuSCN / n-ZnO NRs heterojunction was constructed, and the UV photoelectric response of the heterojunction was studied. It was found that the CuSCN particles deposited by electrochemical deposition were pyramidal and completely covered with the surface of ZnO NRs. The direct contact between au electrode and ZnO NRs was avoided, and the leakage current of heterojunction was reduced. The results of electrical measurement show that CuSCN / ZnO NRs heterojunction has the characteristics of rectifying, photovoltaic effect under illumination, and the self-driving light response can be realized without external electric field. The heterojunction of CuSCN / ZnO NRs without external electric field has a good spectral selectivity to ultraviolet light, and the CuSCN / ZnO NRs heterojunction grown by AZO (0.5%) seed layer films has a large self-driving photocurrent. The responsivity is about 22.5 Ma / W, which can be attributed to the enhanced UV light absorption of ZnO NRs and good carrier transport properties. (3) MoS2 nanocrystals grown on the surface of AZO (0.5%) seed layer ZnO NRs are fabricated by spin-coated liquid stripping, and MoS2 / ZnO NRs heterostructures are constructed. The photoelectric response characteristics are studied. It is found that the surface of ZnO NRs is perpendicular to the surface of MOS2 nanoplates. The heterojunction exhibits ultraviolet light. The smaller the number of layers, the smaller the contact resistance of MoS2 nanoparticles and ZnO NRs is. The photocurrent of the heterojunction in the ultraviolet and red region increases the photoresponse rate.
【學(xué)位授予單位】：天津理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN304.21

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