本文選題：金屬有機(jī)化學(xué)氣相沉積 + 氮化��； 參考：《太原理工大學(xué)》2015年碩士論文

【摘要】：氮化鎵（GaN）半導(dǎo)體材料具有帶隙寬、熱導(dǎo)率高、化學(xué)性能穩(wěn)定等優(yōu)越性，已經(jīng)廣泛應(yīng)用于高溫功率器件、高頻微波器件以及發(fā)光二極管（LED）等。目前，藍(lán)光LED主要是在藍(lán)寶石襯底上外延生長多層氮化鎵基材料而制成的，而氮化鎵基材料與藍(lán)寶石之間存在較大的晶格失配，通過預(yù)先生長一層GaN緩沖層，才能提高在其上生長的GaN基材料晶體質(zhì)量，，進(jìn)而得到性能優(yōu)異的器件。所以GaN緩沖層是整個(gè)發(fā)光材料生長的基礎(chǔ)，是本文研究的重點(diǎn)；P型GaN基材料的摻雜直接決定LED器件性能，一直是藍(lán)光LED外延生長中一個(gè)重要環(huán)節(jié)，也是本文的另一個(gè)研究內(nèi)容。 本文利用金屬有機(jī)化學(xué)氣相沉積（MOVPE）方法生長了氮化鎵基半導(dǎo)體材料，并利用原子力顯微鏡（AFM），高分辨率X-射線衍射儀（HRXRD），霍爾測試儀（HALL）、原位生長監(jiān)測曲線和芯片檢測儀對(duì)薄膜材料及其制成的器件進(jìn)行了表征。主要內(nèi)容包括兩個(gè)方面：1.藍(lán)寶石襯底上的氮化，研究在低溫下藍(lán)寶石氮化時(shí)間對(duì)于氮化鎵緩沖層和外延層的晶體質(zhì)量的影響，得出低溫下氮化時(shí)間對(duì)于GaN外延層晶體質(zhì)量的影響規(guī)律，并提出了符合該規(guī)律的模型；2. AlGaN中的p型摻雜，研究摻雜源二茂鎂（Cp2Mg）在AlGaN中的摻雜濃度對(duì)LED光電性質(zhì)的影響，通過優(yōu)化Cp2Mg流量，得到適當(dāng)?shù)目昭舛�，最終達(dá)到提高LED亮度的目的，同時(shí)揭示了p-AlGaN電子阻擋層的Mg摻雜濃度對(duì)LED的光電性能影響的原因。
[Abstract]:Gallium nitride (gan) semiconductor materials have been widely used in high-temperature power devices, high-frequency microwave devices and light-emitting diodes (LED) for their advantages such as wide band gap, high thermal conductivity and stable chemical properties. At present, sapphire LEDs are mainly grown on sapphire substrates by epitaxial growth of gallium nitride based materials. However, there is a large lattice mismatch between gallium nitride based materials and sapphire, and a layer of gan buffer layer is pre-grown. In order to improve the crystal quality of GaN-based materials grown on it, the devices with excellent performance can be obtained. Therefore, gan buffer layer is the basis of the growth of the whole luminescent material, and the doping of P type GaN-based material directly determines the performance of LED devices. It is always an important link in the epitaxial growth of blue LED. Also is another research content of this paper. Gallium nitride based semiconductor materials were grown by metal organic chemical vapor deposition (MOVPE). The thin films and their devices were characterized by atomic force microscope (AFM), high resolution X-ray diffraction (HRXRD), Hall tester (all), in situ growth monitoring curve and chip detector. The main content includes two aspects: 1. The effect of sapphire nitriding time on the crystal quality of gallium nitride buffer layer and epitaxial layer at low temperature was studied. The effect of nitriding time on the crystal quality of gan epitaxial layer was obtained. And the model is put forward which accords with the law. The p-type doping of AlGaN is studied. The influence of doping concentration of dopant source (CP _ 2mg) in AlGaN on the photoelectric properties of LED is studied. By optimizing the flow rate of Cp2mg, the appropriate hole concentration can be obtained, and finally the brightness of LED will be improved. At the same time, the influence of mg doping concentration in p-AlGaN electronic barrier layer on the photoelectric properties of LED is revealed.
【學(xué)位授予單位】：太原理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN312.8;O614.371

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 樂伶聰;趙德剛;吳亮亮;鄧懿;江德生;朱建軍;劉宗順;王輝;張書明;張寶順;楊輝;;The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition[J];Chinese Physics B;2011年12期

本文編號(hào)：2067264