本文選題：硅襯底 + GaN　； 參考：《南昌大學(xué)》2015年碩士論文

【摘要】：GaN基LED在照明領(lǐng)域獲得了廣泛應(yīng)用,已經(jīng)與人們的生活息息相關(guān),但現(xiàn)有生產(chǎn)工藝的改進(jìn)、新技術(shù)的開(kāi)發(fā)、相關(guān)物理機(jī)理的研究仍然是整個(gè)領(lǐng)域的熱點(diǎn)。目前,商品化的GaN基LED按外延襯底劃分共有碳化硅(SiC)、藍(lán)寶石(Al2O3)及硅(Si)襯底三條技術(shù)路線(xiàn)。盡管硅襯底GaN基LED在中國(guó)率先實(shí)現(xiàn)了產(chǎn)業(yè)化,并成為半導(dǎo)體照明的主要三條技術(shù)路線(xiàn)之一,然而它還有大量的科學(xué)技術(shù)問(wèn)題沒(méi)有解決,值得多學(xué)科交叉融合進(jìn)行深入研究。GaN基LED外延生長(zhǎng)、芯片制造、器件封裝、和使用過(guò)程中各種應(yīng)力對(duì)器件光電性能影響的研究是當(dāng)前研究熱點(diǎn),文獻(xiàn)中對(duì)此現(xiàn)象的研究主要集中在GaN沒(méi)有從外延襯底剝離的同側(cè)結(jié)構(gòu)器件,對(duì)垂直結(jié)構(gòu)GaN基LED器件尤其是硅襯底GaN基LED器件中各種應(yīng)力的研究還處于初始階段。基于硅襯底GaN基LED平臺(tái),本文設(shè)計(jì)和制備多種具有不同應(yīng)力狀態(tài)的垂直結(jié)構(gòu)GaN基LED以及不同應(yīng)力狀態(tài)的LED薄膜,研究其應(yīng)力與LED光電性能之間的關(guān)系,以及通過(guò)高分辨率X射線(xiàn)衍射儀(HRXRD)測(cè)試分析了不同應(yīng)力狀態(tài)下LED薄膜內(nèi)在應(yīng)力的情況以及量子阱的情況。獲得了一下研究成果:1)將硅(Si)襯底上外延生長(zhǎng)的氮化鎵(GaN)基發(fā)光二極管(LED)薄膜轉(zhuǎn)移至含有柔性粘結(jié)層的基板上,獲得了不受襯底和支撐基板束縛的LED薄膜。利用高分辨率X射線(xiàn)衍射儀(HRXRD)研究了薄膜轉(zhuǎn)移前后的應(yīng)力變化,同時(shí)對(duì)其光致發(fā)光(PL)光譜的特性進(jìn)行了研究。結(jié)果表明:硅襯底GaN基LED薄膜轉(zhuǎn)移至柔性基板后,GaN受到的應(yīng)力會(huì)由轉(zhuǎn)移前巨大的張應(yīng)力變?yōu)檗D(zhuǎn)移后微小的壓應(yīng)力,InGaN/GaN量子阱受到的壓應(yīng)力則增大;盡管LED薄膜室溫?zé)o損轉(zhuǎn)移至柔性基板其In GaN阱層的In組分不會(huì)改變,然而按照HRXRD倒易空間圖譜通用計(jì)算方法會(huì)得出平均銦組發(fā)生了變化;GaN基LED薄膜從外延片轉(zhuǎn)移至柔性基板時(shí)其PL譜會(huì)發(fā)生明顯紅移。2)將硅(Si)襯底上外延生長(zhǎng)的氮化鎵(GaN)基發(fā)光二極管(LED)薄膜剝離轉(zhuǎn)移到新的硅基板和紫銅基板上,并獲得了垂直結(jié)構(gòu)的LED芯片,對(duì)其變溫變電流電致發(fā)光(EL)特性進(jìn)行了研究。結(jié)果表明:當(dāng)環(huán)境溫度不變時(shí),在13K低溫狀態(tài)下銅基板芯片的EL波長(zhǎng)始終大于硅基板芯片約6nm,在300K狀態(tài)下隨著驅(qū)動(dòng)電流的加大銅基板芯片的EL波長(zhǎng)會(huì)由大于硅基板芯片3nm左右而逐漸變?yōu)榕c硅基板芯片重合;當(dāng)驅(qū)動(dòng)電流不變時(shí),環(huán)境溫度由13K升高到320K,兩種基板芯片的EL峰值波長(zhǎng)隨溫度升高呈現(xiàn)S型變化并且波譜逐漸趨于重合;在100K以下溫度時(shí)銅基板芯片的Droop效應(yīng)比硅基板芯片明顯,在100K以上溫度時(shí)硅基板芯片的Droop效應(yīng)比銅基板芯片明顯�？赡苁怯捎趦煞N芯片的基板具有不同的熱膨脹系數(shù)和熱導(dǎo)率導(dǎo)致了其變溫變電流的EL特性不同。
[Abstract]:GaN-based LED has been widely used in the field of lighting and has been closely related to people's lives. However, the improvement of existing production technology, the development of new technology and the research of related physical mechanism are still the focus of the whole field. At present, commercial GaN-based LEDs are divided into three technical routes according to epitaxial substrates: silicon carbide (sic), sapphire (Al _ 2O _ 3) and Si _ 2O _ (3) substrates. Although GaN-based LED on silicon substrate is the first to realize industrialization in China and become one of the three main technology routes of semiconductor lighting, it still has a large number of scientific and technological problems that remain unsolved. The research on the effects of various stresses on the optoelectronic performance of gan based LED, such as epitaxial growth, chip fabrication, device packaging, and the process of application, is a hot research topic at present. The research on this phenomenon is mainly focused on the ipsilateral structure devices which gan is not stripped from the epitaxial substrate. The study of the stress in the vertical structure GaN-based LED devices, especially in the Si substrate GaN-based LED devices, is still in the initial stage. Based on gan based LED platform on silicon substrate, several kinds of vertical gan based LEDs with different stress states and LED thin films with different stress states are designed and fabricated in this paper. The relationship between the stress and the photoelectric properties of LEDs is studied. The inner stress and quantum well of LED thin film under different stress states were analyzed by high resolution X-ray diffractometer (HRXRD). In this paper, we obtain the research result: 1) transfer the epitaxially grown Gallium nitride (GaN-based) LED) thin films on Si Si) substrates to the substrates containing flexible bonding layers, and obtain the LED thin films which are not bound by the substrate and the supporting substrates. High resolution X-ray diffraction (HRXRD) was used to study the stress changes of the films before and after transfer. The photoluminescence (PL) spectra of the films were also studied. The results show that the stress of gan is changed from the large tensile stress before transfer to the compressive stress of InGaN / gan quantum well after the transfer of GaN-based LED thin film on silicon substrate to the flexible substrate, while the compressive stress of InGaN / gan quantum well increases. Even though LED films are transferred to flexible substrates at room temperature without loss, the in component of the in gan trap layer will not change. However, according to the general calculation method of HRXRD reciprocal spatial pattern, it can be concluded that the average indium group changes when the PL spectra of GaN-based LED films transfer from the epitaxial wafer to the flexible substrate, the PL spectra of the films will be red-shifted significantly. 2) the nitridation of epitaxial growth on Si / Si) substrates will occur. Gallium-doped gan (GaN-based) LED) thin films are peeled onto new silicon and copper substrates. A vertical LED chip is obtained, and the ELL characteristics of the LED chip with variable temperature and current are studied. The results show that when the ambient temperature is constant, At low temperature of 13K, the El wavelength of copper substrate chip is always larger than that of silicon substrate chip about 6 nm. At 300K state, the El wavelength of copper substrate chip will change from about 3nm larger than silicon substrate chip to superposition with silicon substrate chip with the increase of driving current. When the driving current is invariant, the ambient temperature increases from 13K to 320K, and the El peak wavelength of the two kinds of substrates varies with the increase of temperature, and the spectra of the two kinds of substrates tend to coincide with each other. The droop effect of copper substrate chip is more obvious than that of silicon substrate chip at temperature below 100K, and the Droop effect of silicon substrate chip is more obvious than that of copper substrate chip at temperature above 100K. It may be that the different thermal expansion coefficient and thermal conductivity of the two kinds of substrates lead to the different El characteristics of the substrates with variable temperature and current.
【學(xué)位授予單位】：南昌大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN312.8;TB383.2

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本文編號(hào)：2044968