本文選題：單粒子翻轉(zhuǎn)效應(yīng) + SOI　； 參考：《遼寧大學(xué)》2015年碩士論文

【摘要】：空間輻射環(huán)境中的帶電粒子對(duì)太空中飛行的航天器的性能和壽命有著重要的影響。隨著集成電路越來越廣泛的應(yīng)用,航天器中所攜帶的電子設(shè)備越來越容易受到空間帶電粒子的干擾。這些干擾中由于單粒子翻轉(zhuǎn)效應(yīng)引起的故障變得越來越不可忽視,所以需要研究和評(píng)估。目前評(píng)估單粒子翻轉(zhuǎn)效應(yīng)的方法有空間實(shí)驗(yàn)、地面實(shí)驗(yàn)和模擬等,由于空間實(shí)驗(yàn)和地面實(shí)驗(yàn)的成本高周期長(zhǎng),模擬方法既方便又快捷,所以有必要對(duì)對(duì)單粒子翻轉(zhuǎn)效應(yīng)進(jìn)行模擬研究。本文介紹了研究單粒子翻轉(zhuǎn)效應(yīng)的歷史與現(xiàn)狀,分析了單粒子翻轉(zhuǎn)效應(yīng)的機(jī)理,探討了單粒子翻轉(zhuǎn)效應(yīng)的研究方向和方法。對(duì)所采用的仿真軟件進(jìn)行了簡(jiǎn)單介紹,并采用建模仿真的方法研究了硅體器件的單粒子翻轉(zhuǎn)效應(yīng),確定了影響單粒子翻轉(zhuǎn)效應(yīng)的主要因素。仿真結(jié)果表明:工作電壓越大器件的抗單粒子翻轉(zhuǎn)性能越強(qiáng);帶電粒子的線性能量傳遞系數(shù)越大器件越容易發(fā)生翻轉(zhuǎn);重離子射入器件敏感區(qū)的有效路徑越長(zhǎng)器件越容易發(fā)生翻轉(zhuǎn)等;利用ISE-TCAD軟件,對(duì)SOI器件進(jìn)行了建模仿真,并分析比較了基于硅體器件和SOI工藝器件在相同因素影響下的抗單電子翻轉(zhuǎn)性能。仿真結(jié)果表明SOI工藝器件的抗單粒子翻轉(zhuǎn)性能相比硅體器件有了極大的提升。
[Abstract]:Charged particles in space radiation environment have an important influence on the performance and lifetime of spacecraft flying in space. With the wide application of integrated circuits, electronic devices carried in spacecraft are more and more vulnerable to the interference of charged particles in space. The faults caused by single particle inversion in these disturbances are becoming more and more important, so it is necessary to study and evaluate them. At present, there are many methods to evaluate the effect of single particle inversion, such as space experiment, ground experiment and simulation, etc. Because the cost of space experiment and ground experiment is long, the simulation method is convenient and fast. So it is necessary to simulate the single-particle reversal effect. In this paper, the history and present situation of single particle flip effect are introduced, the mechanism of single particle flip effect is analyzed, and the research direction and method of single particle flip effect are discussed. The simulation software is introduced briefly, and the single-particle flip effect of silicon device is studied by modeling and simulation, and the main factors affecting the single-particle flip effect are determined. The simulation results show that the higher the working voltage, the stronger the anti-single particle flip performance, and the more the linear energy transfer coefficient of charged particles is, the easier it is to flip the device. The longer the effective path of heavy ion injection into the sensitive region of the device, the easier it is to flip the device, etc. By using ISE-TCAD software, the SOI device is modeled and simulated. The anti-single-electron flip performance of silicon based devices and SOI process devices under the same influence factors was analyzed and compared. The simulation results show that the performance of SOI process is much better than that of silicon device.
【學(xué)位授予單位】：遼寧大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：V416;TN32

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