發(fā)布時(shí)間：2018-06-20 15:42

  本文選題：GaAs + HEMT　； 參考：《半導(dǎo)體技術(shù)》2016年06期

【摘要】：為了更好地表征GaAs HEMT開關(guān)器件的特性,提出了一種基于經(jīng)驗(yàn)公式的改進(jìn)型大信號(hào)模型�；�0.25μm HEMT工藝制備不同柵指數(shù)和單指柵寬的GaAs HEMT開關(guān)器件,然后對這些器件進(jìn)行直流I-V特性和多偏置S參數(shù)的測試。采用柵源電流模型、漏源電流模型和電容模型對測試曲線進(jìn)行擬合,從而得到可定標(biāo)的GaAs開關(guān)大信號(hào)模型。對模型的開態(tài)插損和關(guān)態(tài)隔離度進(jìn)行小信號(hào)仿真,模型的仿真結(jié)果與測試結(jié)果吻合較好,驗(yàn)證了此模型有較高的精準(zhǔn)度。通過大信號(hào)負(fù)載牽引測試驗(yàn)證了模型的有效性,此模型可用于GaAs HEMT開關(guān)器件的設(shè)計(jì)、開發(fā)及應(yīng)用。
[Abstract]:In order to better characterize the characteristics of GaAs HEMT switching devices, an improved large signal model based on empirical formula is proposed. GaAs HEMT switch devices with different gate exponents and single finger gate widths are fabricated based on 0.25 渭 m HEMT process. The DC I-V characteristics and multi-bias S parameters of these devices are measured. The gate source current model, drain source current model and capacitance model are used to fit the test curve, and a scalable large signal model of GaAs switch is obtained. The small signal simulation of the open state insertion loss and the off state isolation of the model is carried out, and the simulation results are in good agreement with the test results, which verifies that the model has a high accuracy. The validity of the model is verified by large signal load traction test. The model can be used in the design, development and application of GaAs HEMT switch devices.
【作者單位】： 中國電子科技集團(tuán)公司第十三研究所;
【分類號(hào)】：TN386

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本文編號(hào)：2044768