本文選題：激光損傷 + 毫秒激光��； 參考：《南京理工大學(xué)》2017年碩士論文

【摘要】：近些年來,砷化鎵材料在航天科技以及國防軍事領(lǐng)域有著越來越多的應(yīng)用。以其為原料所制造的太陽能電池在轉(zhuǎn)化效率方面有著其他材料無法比擬的優(yōu)勢。而激光對材料的損傷一直以來都是科研的熱點問題。目前,關(guān)于毫秒激光致砷化鎵材料損傷方面的研究并不是很多,相關(guān)的損傷機理仍然有待于探索。為了探究1064nm毫秒激光損傷砷化鎵材料的機理,本文通過實驗以及建模的方法,對材料受輻照過程中熱及熱應(yīng)力在損傷中的作用進行了分析�；谌S熱傳導(dǎo)方程建立了 1064nm毫秒激光輻照砷化鎵材料時材料的溫度場模型。模型結(jié)果顯示,對于1064nm,1ms的激光,砷化鎵材料的損傷閾值為61.5J/cm2。通過模型還得到了材料在不同能量密度激光輻照時,熔融,重凝固等相變過程的信息,以及不同能量密度時材料的熔融閾值,熔融半徑,熔融深度。同時搭建實驗平臺,采用紅外測溫儀對受激光輻照時材料光斑中心點的溫度進行實時的測量。實驗所得到的溫升曲線和模型所得到的結(jié)果相吻合,驗證了模型的準(zhǔn)確性�；跍囟葓瞿Ｐ�,再考慮砷化鎵的晶體結(jié)構(gòu),建立了毫秒激光輻照砷化鎵材料的熱應(yīng)力場模型,并計算了砷化鎵材料12個滑移系的分切應(yīng)力在材料表面及體內(nèi)的分布。模型結(jié)果顯示,材料受激光輻照后產(chǎn)生裂紋是由于砷化鎵晶體內(nèi)滑移系分切應(yīng)力超過臨界分切應(yīng)力而導(dǎo)致的滑移產(chǎn)生的。材料的滑移將在熱熔損傷之前出現(xiàn),其將最先在材料受輻照面光斑中心內(nèi)部的區(qū)域產(chǎn)生�；频陌l(fā)生將為材料之后進一步的脆性斷裂提供起始點。計算結(jié)果顯示,材料受激光輻照后所出現(xiàn)的裂紋最有可能出現(xiàn)在光斑中心及邊界附近,這與我們在實驗中所得到的結(jié)果相吻合。本文的研究成果對于進一步的研究毫秒激光作用物質(zhì)的機理提供參考。
[Abstract]:In recent years, gallium arsenide materials have been used more and more in space science and technology as well as defense and military fields. The solar cells made from the solar cells have more advantages than other materials in conversion efficiency. Laser damage to materials has always been a hot issue in scientific research. At present, there are not many researches on the damage of GaAs materials induced by millisecond laser, and the related damage mechanism remains to be explored. In order to explore the mechanism of 1064nm millisecond laser damage of GaAs materials, the effect of thermal and thermal stress on the damage of materials during irradiation was analyzed by means of experiments and modeling. The temperature field model of GaAs material irradiated by 1064nm millisecond laser is established based on three dimensional heat conduction equation. The model results show that the damage threshold of gallium arsenide is 61.5 J / cm ~ 2 for 1064 nm ~ (-1) Ms laser. The information of phase transformation such as melting and resolidification of materials irradiated by laser with different energy densities, as well as the melting threshold, melting radius and melting depth of the materials with different energy density were also obtained by the model. At the same time, an experimental platform was set up to measure the temperature of the spot center of the material under laser irradiation with infrared thermometer in real time. The temperature rise curve obtained by the experiment coincides with the results obtained by the model, which verifies the accuracy of the model. Based on the temperature field model and considering the crystal structure of gallium arsenide, the thermal stress field model of GaAs material irradiated by millisecond laser is established, and the distribution of shear stress in the surface and body of 12 slip systems of gallium arsenide material is calculated. The model results show that the crack caused by laser irradiation is due to the slip caused by the slip system shear stress exceeding the critical shear stress in GaAs crystal. The slippage of the material will occur before the hot melt damage, and it will occur first in the region inside the center of the spot on the irradiated surface of the material. The occurrence of slip will provide the starting point for further brittle fracture after the material. The calculated results show that the cracks after laser irradiation are most likely to occur near the center and boundary of the spot, which is in agreement with our experimental results. The results of this paper provide a reference for further study of the mechanism of millisecond laser acting on matter.
【學(xué)位授予單位】：南京理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN304.23;TN249

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