本文選題：X波段 + 單片微波集成電路�。� 參考：《北京工業(yè)大學(xué)》2015年碩士論文

【摘要】：無(wú)線通訊技術(shù)與人們的日常生活息息相關(guān),其應(yīng)用領(lǐng)域也是越來(lái)越廣泛。不論是個(gè)人還是國(guó)家,對(duì)于高性能的微波集成電路都有著很大需求。本文對(duì)X波段MMIC低噪聲放大器的電路進(jìn)行了研究和設(shè)計(jì),主要包括以下內(nèi)容:MMIC低噪聲放大器的背景調(diào)研,低噪聲放大器設(shè)計(jì)參數(shù)介紹,相關(guān)器件模型建立和工藝分析,最后詳細(xì)介紹該放大器的設(shè)計(jì)過(guò)程。論文選用了臺(tái)灣穩(wěn)懋半導(dǎo)體公司的0.15um GaAs Low Noise pHEMT工藝線,使用ADS軟件仿真設(shè)計(jì)了一個(gè)工作頻率在8~12GHz波段的MMIC低噪聲放大器。本論文設(shè)計(jì)的低噪聲放大芯片的拓?fù)浣Y(jié)構(gòu)為三級(jí)放大器級(jí)聯(lián)的結(jié)構(gòu)。第一級(jí)采用源端負(fù)反饋技術(shù)和衰減電路,從而提高晶體管的穩(wěn)定性;該級(jí)放大器對(duì)系統(tǒng)噪聲貢獻(xiàn)最大,因此設(shè)計(jì)時(shí)主要針對(duì)噪聲進(jìn)行設(shè)計(jì),輸入端采用了最小噪聲系數(shù)匹配。第二級(jí)因?yàn)榈谝患?jí)設(shè)計(jì)增益不夠高,因此也主要針對(duì)噪聲做匹配。由于增益隨頻率升高呈下降趨勢(shì),而且第三級(jí)電路噪聲幾乎不對(duì)系統(tǒng)有影響。所以第三級(jí)為補(bǔ)償增益采用了負(fù)反饋結(jié)構(gòu),目的是改善系統(tǒng)的增益平坦度。每一級(jí)根據(jù)不同的指標(biāo)要求分別對(duì)管芯及其匹配電路進(jìn)行設(shè)計(jì),同時(shí)為便于級(jí)聯(lián),將各級(jí)的輸入輸出匹配到50歐姆,然后再進(jìn)行三級(jí)的級(jí)聯(lián)以及電路的優(yōu)化設(shè)計(jì)。最后制作版圖,反復(fù)進(jìn)行Momentum電磁仿真,調(diào)整版圖設(shè)計(jì)以達(dá)到最佳仿真效果。最終設(shè)計(jì)實(shí)現(xiàn)的X波段MMIC低噪聲放大器在8~12GHz內(nèi)有良好的性能,主要指標(biāo)為:整體噪聲系數(shù)小于1.2dB,總增益大于20dB,工作頻率內(nèi)增益平坦度小于±1.5dB,輸入輸出駐波比小于2.0,都滿足了預(yù)期的設(shè)計(jì)目標(biāo)。
[Abstract]:Wireless communication technology is closely related to people's daily life, and its application field is more and more extensive. Whether individuals or countries, there is a great demand for high-performance microwave integrated circuits. In this paper, the circuit of X-band MMIC low noise amplifier is studied and designed, which includes the following contents: the background investigation of the low noise amplifier, the introduction of the design parameters of the low noise amplifier, the establishment of the related device model and the process analysis. Finally, the design process of the amplifier is introduced in detail. In this paper, the 0.15um low noise pHEMT process line of Taiwan stabilized Semiconductor Company is selected, and an MMIC low noise amplifier with operating frequency of 81GHz is designed by using ads software. The topology of the low noise amplifier chip designed in this paper is three stage amplifier cascade structure. In the first stage, the negative feedback technique and attenuation circuit are used to improve the stability of transistors. The amplifier contributes the most to the noise of the system, so it is mainly designed for noise, and the minimum noise coefficient matching is used in the input. Because the first stage design gain is not high enough, the second stage is mainly aimed at noise matching. Because the gain decreases with the increase of frequency, and the noise of the third stage circuit has little effect on the system. Therefore, the third stage adopts a negative feedback structure to compensate the gain, which aims to improve the gain flatness of the system. The core and its matching circuit are designed for each stage according to different index requirements. In order to facilitate the cascade, the input and output of each level are matched to 50 ohms, and then the three-stage cascade and the circuit optimization design are carried out. Finally, the layout is made, the moment electromagnetic simulation is carried out repeatedly, and the layout design is adjusted to achieve the best simulation effect. Finally, the X-band MMIC low noise amplifier has good performance in 81GHz. The main parameters are as follows: the overall noise coefficient is less than 1.2 dB, the total gain is more than 20 dB, the gain flatness is less than 鹵1.5 dB, and the input and output VSWR is less than 2.0.
【學(xué)位授予單位】：北京工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.3
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本文編號(hào)：2040300