本文選題：銦鎵砷/砷化鎵 + 帶間躍遷　； 參考：《紅外與毫米波學(xué)報(bào)》2017年02期

【摘要】：近期,實(shí)驗(yàn)發(fā)現(xiàn)PN結(jié)中局域載流子具有極高提取效率,并導(dǎo)致吸收系數(shù)的大幅度增加.文中報(bào)道基于上述現(xiàn)象的新型量子阱帶間躍遷紅外探測(cè)器原型器件的性能.利用含有InGaAs/GaAs多量子阱的PIN二極管,在無(wú)表面減反射膜的實(shí)驗(yàn)條件下,利用僅100 nm的有效吸收厚度,實(shí)現(xiàn)了31%的外量子效率.基于該數(shù)值推算得到,量子阱的光吸收系數(shù)達(dá)3.7×10~4cm~(-1),該數(shù)值高于傳統(tǒng)透射實(shí)驗(yàn)測(cè)量結(jié)果一個(gè)數(shù)量級(jí).上述實(shí)驗(yàn)結(jié)果指出,利用量子阱帶間躍遷工作機(jī)制,有望實(shí)現(xiàn)新穎的器件結(jié)構(gòu)設(shè)計(jì)和提高現(xiàn)有器件性能.
[Abstract]:Recently, it is found that the local carriers in PN junction have very high extraction efficiency and lead to a large increase in absorption coefficient. This paper reports the performance of a novel quantum well interband transition infrared detector based on the above phenomena. The external quantum efficiency of 31% is achieved by using the PIN diode containing InGaAs/GaAs multiple quantum wells under the experimental condition of no surface antireflection film and the effective absorption thickness of only 100nm. The optical absorption coefficient of the quantum well is 3.7 脳 10 ~ (4) cm ~ (-1) ~ (-1), which is an order of magnitude higher than that of the conventional transmission experiment. The experimental results show that it is possible to achieve novel device structure design and improve the performance of existing devices by using the quantum well interband transition mechanism.
【作者單位】： 中國(guó)科學(xué)院物理研究所北京凝聚態(tài)國(guó)家實(shí)驗(yàn)室北京新能源材料與器件重點(diǎn)實(shí)驗(yàn)室清潔能源重點(diǎn)實(shí)驗(yàn)室;
【基金】：Supported by the National Natural Science Foundation of China(11574362,61210014,11374340,and 11474205) Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission(Z151100003515001)
【分類號(hào)】：TN215

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本文編號(hào)：1989328