本文選題：MEMS + TSV��； 參考：《傳感技術學報》2017年01期

【摘要】：硅通孔(TSV)技術用于MEMS器件可實現器件結構的垂直互聯,達到減小芯片面積、降低器件功耗等目的。對TSV結構的刻蝕和填充工藝進行了研究,通過優(yōu)化ICP刻蝕工藝參數獲得了端口、中部、底部尺寸平滑減小、深寬比大于20∶1的硅通孔;利用LPCVD技術實現了基于多晶硅的通孔無縫填充;經測試,填充后通孔絕緣電阻達10 GΩ以上,電絕緣性能良好。
[Abstract]:Silicon through hole (TSVV) technology can realize the vertical interconnection of MEMS devices, reduce the chip area and reduce the power consumption of the devices. The etching and filling process of TSV structure was studied. The port was obtained by optimizing the parameters of ICP etching process. In the middle, the bottom dimension was reduced smoothly, and the aspect ratio was more than 20:1. The through hole filling based on polysilicon is realized by LPCVD technology, and the through hole insulation resistance is more than 10G 惟, and the electrical insulation performance is good.
【作者單位】： 華東光電集成器件研究所;
【分類號】：TN405
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本文編號：1985311