本文選題：功率器件 + IGBT��； 參考：《電子科技大學(xué)》2016年碩士論文

【摘要】：電能的合理分配和利用對建設(shè)環(huán)保節(jié)約型社會越來越重要。電能的轉(zhuǎn)換利用離不開電力電子技術(shù)。功率器件作為該技術(shù)的核心部件每次的推陳出新,都帶動著電力電子技術(shù)的進步。本文研究的EST(Emitter Switched Thyristor)正是在IGBT(Insulated Gate Bipolar Transistor)的基礎(chǔ)上提出來的一種新型功率器件。眾所周知IGBT是MOS控制的晶體管結(jié)構(gòu),在其內(nèi)部寄生的晶閘管未達到閂鎖之前,基區(qū)由于雙極性器件的電導(dǎo)調(diào)制效應(yīng),相同電流密度情況下,導(dǎo)通壓降較同等摻雜水平的VDMOS器件降低了很多。然而在高壓大電流的應(yīng)用中,IGBT的導(dǎo)通電阻仍然較大,電流密度也會因此受到限制。晶閘管導(dǎo)通后具有很大的電流密度,低的導(dǎo)通壓降較晶體管會有更好的正向?qū)ㄌ匦�。EST正是利用了晶閘管開啟過程中的優(yōu)良特性同時利用MOSFET對其導(dǎo)通后的特性加以控制。因此與IGBT比較而言,EST導(dǎo)通電阻更低,且由于MOSFET的引入其導(dǎo)通電流具有飽和特性,這是MOS控制型晶閘管(MCT)所不具備的。目前針對EST的研究還比較少,本文從晶閘管入手,逐步探討關(guān)于EST及其改進器件的特性。主要內(nèi)容為:1.在MATLAB中對碰撞電離積分與PN結(jié)外加反向電壓的關(guān)系運用曲線擬合,得到了與MEDICI仿真結(jié)果更為吻合的Miller關(guān)系式。同時給出了摻雜濃度與Miller公式中的S參數(shù)的經(jīng)驗表達式。這對EST的阻斷狀態(tài)下的耐壓設(shè)計有一定的借鑒意義。2.晶閘管特性的研究,主要內(nèi)容包括:阻斷狀態(tài)和轉(zhuǎn)折之后內(nèi)部載流子的變化、電離率積分隨外加電壓的變化等。并應(yīng)用MATLAB對其進行理論上的計算,得到其耐壓的原因。EST正是對晶閘管的開啟關(guān)斷進行控制,因此晶閘管的研究是EST研究的基礎(chǔ)。3.使用MEDICI軟件定義EST器件結(jié)構(gòu),對其載流子分布、閾值電壓、擊穿電壓、動態(tài)特性等進行仿真,提出了EST正向工作時的四個區(qū)域,并對不同區(qū)域進行解析分析,進而對其開關(guān)特性進行了仿真研究。4.對ESTD(Emitter Switched Thyristor With Diverter)及EST進行對比研究,對其存在的問題進行探討,總結(jié)仿真所得結(jié)果。確定其對應(yīng)的關(guān)鍵參數(shù),得出優(yōu)化設(shè)計的一般方法。
[Abstract]:The rational distribution and utilization of electric energy is becoming more and more important to the construction of an environmentally friendly and economical society. The conversion and utilization of electric energy can not be separated from power electronics technology. As the core component of this technology, power device brings forward the progress of power electronics technology every time. EST(Emitter Switched Thyristoris is a new power device based on IGBT(Insulated Gate Bipolar Transistor). It is well known that IGBT is a transistor structure controlled by MOS. Before the parasitic thyristor reaches the latch inside, the base region has the same current density due to the conductance modulation effect of bipolar devices. The on-voltage drop is much lower than that of VDMOS devices with the same doping level. However, in the application of high voltage and high current, the on-resistance of IGBT is still large, and the current density will be limited. The thyristor has a high current density after switching on, and the lower on-voltage drop will have better forward conduction characteristics than the transistor. EST makes use of the excellent characteristics in the thyristor opening process and uses MOSFET to control the on-on characteristics of the thyristor. Therefore, compared with IGBT, the on-resistance of MOSFET is lower, and the on-current of MOSFET is saturated, which is not available in MOS controlled thyristor. At present, there are few researches on EST. In this paper, the characteristics of EST and its improved devices are discussed step by step from thyristor. The main content is: 1. The relationship between collision ionization integral and applied reverse voltage of PN junction is fitted by curve fitting in MATLAB, and a Miller relation is obtained, which is more consistent with the result of MEDICI simulation. The empirical expressions of the doping concentration and the S parameter in the Miller formula are also given. This is useful for the design of EST. 2. 2. The main contents of the study of thyristor characteristics include the variation of internal carriers after blocking state and turning point, the variation of ionization rate integral with applied voltage, and so on. The MATLAB is used to calculate it theoretically, and the reason of its voltage resistance is obtained. EST is the control of thyristor opening and turning off, so the study of thyristor is the foundation of EST research. The structure of EST device is defined by MEDICI software. The carrier distribution, threshold voltage, breakdown voltage and dynamic characteristics are simulated. Four regions of EST forward operation are proposed, and different regions are analytically analyzed. Then the switching characteristics of the simulation. 4. The ESTD(Emitter Switched Thyristor With Diverter) and EST are compared, the existing problems are discussed, and the simulation results are summarized. The corresponding key parameters are determined and the general method of optimization design is obtained.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TN34

【參考文獻】

相關(guān)期刊論文 前5條

1 俞慧友;;國內(nèi)首條8英寸IGBT專業(yè)芯片線投產(chǎn)打破國外技術(shù)壟斷[J];科技致富向?qū)?2014年18期

2 王陽元;王永文;;綠色微納電子:21世紀中國集成電路產(chǎn)業(yè)和科學(xué)技術(shù)發(fā)展趨勢[J];科技導(dǎo)報;2011年16期

3 王新，李肇基，唐茂成;發(fā)射極開關(guān)晶閘管正向特性分析[J];電子學(xué)報;1996年02期

4 王新，，李學(xué)寧，李肇基，唐茂成;新型發(fā)射極開關(guān)類晶閘管[J];微電子學(xué);1995年03期

5 王新，李肇基，唐茂成;發(fā)射極開關(guān)晶閘管正向特性數(shù)值分析[J];半導(dǎo)體情報;1994年06期

相關(guān)會議論文 前2條

1 王兆安;;關(guān)于我國電力電子技術(shù)發(fā)展之芻議[A];中國電工技術(shù)學(xué)會電力電子學(xué)會五屆三次理事會議暨學(xué)術(shù)報告會論文集[C];2001年

2 徐南屏;;碳化硅——未來功率器件材料[A];中國電工技術(shù)學(xué)會電力電子學(xué)會第八屆學(xué)術(shù)年會論文集[C];2002年

相關(guān)博士學(xué)位論文 前2條

1 程駿驥;智能功率集成電路中功率半導(dǎo)體器件的研究[D];電子科技大學(xué);2013年

2 黃海猛;超結(jié)器件的模型研究及優(yōu)化設(shè)計[D];電子科技大學(xué);2013年

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