本文選題：氮化鎵 + 霍爾遷移率　； 參考：《物理學報》2017年06期

【摘要】：結合莫特相變及類氫模型,采用淺施主能量弛豫方法,計算了一類常見n-Ga N光電子材料的載流子遷移率,給出了精確測定其刃、螺位錯密度的電學方法.研究表明,對于莫特相變材料(載流子濃度超過1018cm~(-3)),以位錯密度Ndis、刃螺位錯密度比β、刃位錯周圍淺施主電離能εD1、螺位錯周圍淺施主電離能εD2為擬合參數(shù)的載流子遷移率模型與實驗曲線高度符合,擬合所得刃、螺位錯密度與X射線衍射法或化學腐蝕方法的測試結果也基本一致.實驗結果表明,莫特相變材料雖然載流子濃度高、霍爾遷移率低,但其位錯密度卻并不一定高過載流子濃度低、霍爾遷移率高的材料,應變也無明顯差異,因此,莫特相變與刃、螺位錯密度及兩類位置最淺的施主均無關系,可能是位置較深的施主或其他缺陷所致,需要比一般雜質(zhì)帶高得多的載流子濃度.該方法適合霍爾遷移率在0 K附近不為零,霍爾遷移率曲線峰位300 K左右及以上的各種生長工藝、各種厚度、各種質(zhì)量層次的薄膜材料,能夠?qū)w移率曲線高度擬合,迅速給出莫特相變材料的相關精確參數(shù).
[Abstract]:Combined with Mott phase transition and hydrogen-like model, the carrier mobility of a class of common n-Ga N optoelectronic materials is calculated by using the shallow donor energy relaxation method. The electrical method for accurately measuring the edge and screw dislocation density is given. Research shows that For Mott phase change materials (carrier concentration over 1018 cm ~ (-1), carrier mobility model with dislocation density Ndiss, edge screw dislocation density ratio 尾, shallow donor ionization energy 蔚 D _ 1 around edge dislocation and shallow donor ionization energy 蔚 D _ 2 around screw dislocation as fitting parameters are obtained. The height of the experimental curve is consistent, The measured results of the fitted edge, the screw dislocation density and the X-ray diffraction method or chemical corrosion method are also consistent. The experimental results show that the dislocation density of Mott phase change material is not always higher than that of carrier concentration, although the carrier concentration is high and Hall mobility is low, and the strain of the material with high Hall mobility is not obviously different. The Mott phase transition is not related to the edge, screw dislocation density and the shallowest donor in both categories. It may be caused by the deeper donor or other defects and requires a much higher carrier concentration than the normal impurity band. This method is suitable for all kinds of growth processes where Hall mobility is not zero near 0 K, peak position of Hall mobility curve is about 300 K or above, thin film materials with various thickness and various quality levels can be highly fitted to the mobility curve. The exact parameters of Mott phase change material are given quickly.
【作者單位】： 南昌大學科學技術學院;南昌大學材料科學與工程學院;上饒職業(yè)技術學院機械工程系;核技術應用教育部工程研究中心(東華理工大學);南昌大學現(xiàn)代教育技術中心;
【基金】：江西省自然科學基金(批準號:20151BAB207066) 南昌大學科學技術學院自然科學基金(批準號:2012-ZR-06)資助的課題~~
【分類號】：TN304.2

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