本文選題：IGBT模塊 + 功率循環(huán)��； 參考：《火力與指揮控制》2017年05期

【摘要】：為了分析IGBT模塊老化過程中電熱參數(shù)的變化規(guī)律,對IGBT模塊進(jìn)行了功率循環(huán)加速老化試驗(yàn),并基于單脈沖測試方法在加速老化試驗(yàn)進(jìn)程中每間隔1 000次功率循環(huán),測取一次IGBT的結(jié)溫、集電極電流與飽和壓降三維關(guān)系曲面、開關(guān)能耗、熱阻抗以及瞬態(tài)熱阻抗曲線。IGBT模塊老化失效時(shí),其飽和壓降、開通能耗、關(guān)斷能耗以及熱阻較其初始值分別增大了3.92%、12.05%、18.87%和22.65%,試驗(yàn)結(jié)果表明隨著IGBT模塊功率循環(huán)次數(shù)的增多,相同工作條件下IGBT飽和壓降的增幅逐漸加大,而飽和壓降、結(jié)溫和集電極電流三者間的內(nèi)在關(guān)系沒有明顯變化;IGBT瞬態(tài)熱阻抗曲線暫態(tài)部分幾乎不變,穩(wěn)態(tài)部分向上移動的幅度逐漸加大;測取的IGBT模塊電熱參數(shù)中飽和壓降增幅最小,開關(guān)能耗增幅較大,模塊熱阻的增幅最為明顯。
[Abstract]:In order to analyze the variation of electrothermal parameters during the aging of IGBT modules, a power cycle accelerated aging test was carried out for IGBT modules. Based on the single pulse test method, the power cycles per 1000 cycles per interval were used in the accelerated aging test process. The junction temperature, collector current and saturation voltage drop surface of the primary IGBT are measured. When the switching energy consumption, thermal impedance and transient thermal impedance curve. The turn-off energy consumption and thermal resistance increase by 18.87% and 22.65%, respectively, compared with its initial value. The experimental results show that with the increase of IGBT module power cycle times, the increase of IGBT saturation pressure drop increases gradually under the same working conditions, but the saturation pressure drop increases gradually. There is no obvious change in the intrinsic relationship between junction and collector current. The transient part of transient thermal impedance curve of IGBT is almost unchanged, the amplitude of steady part moving upward is gradually increasing, and the saturation pressure drop is the smallest in the measured electrothermal parameters of IGBT module. Switch energy consumption increases greatly, the increase of module thermal resistance is the most obvious.
【作者單位】： 山西大學(xué);河北工業(yè)大學(xué)電磁場與電器可靠性省部共建重點(diǎn)實(shí)驗(yàn)室;
【基金】：山西省教育廳“面向工程、探索創(chuàng)新”電氣工程及其自動化專業(yè)建設(shè)基金資助項(xiàng)目
【分類號】：TN322.8

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1 宋南辛;關(guān)于高壓功率晶體管的飽和壓降[J];電子學(xué)報(bào);1985年05期

2 錢正明;外基區(qū)電阻對共發(fā)射極飽和壓降的影響[J];半導(dǎo)體技術(shù);1979年04期

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4 袁炳輝;付o，

本文編號：1967866