本文選題：熱學(xué)特性 + 有限元分析　； 參考：《中國(guó)科學(xué)院研究生院(長(zhǎng)春光學(xué)精密機(jī)械與物理研究所)》2015年碩士論文

【摘要】：LED微陣列芯片利用MOEMS技術(shù)在一整塊半導(dǎo)體外延片上直接制作出若干規(guī)則排列的微小發(fā)光單元,形成LED二維微陣列結(jié)構(gòu)。與傳統(tǒng)的LED芯片相比微陣列芯片具有集成度高、發(fā)光效率高、亮度高等優(yōu)點(diǎn),在顯示、照明、通訊等領(lǐng)域具有廣闊的應(yīng)用前景.隨著LED微陣列芯片單元集成度的提高和功率的增大,芯片的散熱問題也變得越來越重要,成為了制約LED微陣列芯片發(fā)展的關(guān)鍵因素之一。因此,對(duì)LED微陣列芯片的熱特性進(jìn)行分析具有重要的意義。本文針對(duì)AlGaInP材料LED微陣列建立了有限元熱分析模型,介紹了實(shí)體模型建立、網(wǎng)格劃分以及邊界條件的施加方法。模擬分析了在脈沖電流驅(qū)動(dòng)下,單個(gè)單元和3×3單元工作時(shí)陣列的溫度分布情況。通過計(jì)算建立了一種陣列的簡(jiǎn)化模型,簡(jiǎn)化后的模型適用于大尺寸陣列溫度場(chǎng)分布的計(jì)算。結(jié)果表明,簡(jiǎn)化模型與原始模型的溫度分布規(guī)律基本一致,計(jì)算得到的兩種模型在工作1.5s時(shí)的溫度相對(duì)誤差為0.8%。使用簡(jiǎn)化模型模擬了含104個(gè)單元、尺寸為10mm×10mm×100μm的芯片的溫度場(chǎng)分布,工作1.5s時(shí)的芯片中心溫度已達(dá)到360.6℃。為解決其散熱問題,設(shè)計(jì)了兩種熱沉結(jié)構(gòu),并對(duì)其結(jié)構(gòu)進(jìn)行了優(yōu)化,分析了翅片數(shù)量、翅片尺寸、粘結(jié)材料對(duì)芯片溫度的影響。
[Abstract]:The LED microarray chip uses MOEMS technology to fabricate several regular arrangement micro luminescent cells directly on a semiconductor epitaxial wafer to form a two-dimensional LED microarray structure. Compared with the traditional LED chip, the microarray chip has the advantages of high integration, high luminous efficiency, high brightness and so on. It has a broad application prospect in the fields of display, lighting, communication and so on. With the increase of integration and power of LED microarray chip, the problem of heat dissipation becomes more and more important, which has become one of the key factors restricting the development of LED microarray chip. Therefore, it is of great significance to analyze the thermal characteristics of LED microarray chips. In this paper, the finite element thermal analysis model for AlGaInP LED microarray is established, and the methods of establishing solid model, meshing and applying boundary conditions are introduced. The temperature distribution of single unit and 3 脳 3 unit is simulated and analyzed. A simplified model of the array is established by calculation. The simplified model is suitable for the calculation of the temperature field distribution of the large array. The results show that the temperature distribution of the simplified model is basically consistent with that of the original model, and the relative temperature error of the two models is 0.8 at 1.5 s. The temperature field distribution of the chip containing 104 units and the size of 10mm 脳 10mm 脳 100 渭 m is simulated by using the simplified model. The core temperature of the chip has reached 360.6 鈩，

本文編號(hào)：1960932