本文選題：黑磷 + PMMA��； 參考：《中國(guó)科學(xué)院大學(xué)(中國(guó)科學(xué)院物理研究所)》2017年博士論文

【摘要】：近年來(lái),薄層黑磷作為場(chǎng)效應(yīng)晶體管的溝道材料顯示出高開(kāi)關(guān)比和高遷移率的特性,引起研究者的普遍關(guān)注。研究表明黑磷是一種P型半導(dǎo)體,類(lèi)似于石墨烯,它具有褶皺的層狀結(jié)構(gòu),塊體結(jié)構(gòu)的帶隙約為0.3 eV,帶隙隨著塊體所含有原子層層數(shù)的減少而增加,單層黑磷的帶隙約為1.8 eV。室溫下,空穴的載流子遷移率可以接近1000 cm2V-1S-1,具有各項(xiàng)異性的電學(xué)輸運(yùn)特性和光電特性。由于黑磷具有如此多優(yōu)良的特性,人們基于黑磷已經(jīng)制備了各種器件如:場(chǎng)效應(yīng)晶體管,光晶體管,異質(zhì)結(jié),氣體感應(yīng)器和CMOS等。然而,黑磷材料在空氣中容易吸收空氣中的水和氧氣而發(fā)生變質(zhì),導(dǎo)致其電學(xué)性能大大降低,另外本征黑磷為空穴摻雜的雙極型半導(dǎo)體材料,為了將黑磷應(yīng)用于未來(lái)邏輯電路,人們需要一種穩(wěn)定的摻雜手段,將P型黑磷轉(zhuǎn)變?yōu)镹型黑磷,以便充分利用黑磷優(yōu)良的電學(xué)特性來(lái)制備基于黑磷的邏輯電路。因此,本論文將針對(duì)黑磷空氣中的不穩(wěn)定性及互補(bǔ)摻雜等問(wèn)題展開(kāi)研究工作,主要結(jié)果如下:1.利用過(guò)曝PMMA對(duì)黑磷器件進(jìn)行保護(hù),發(fā)現(xiàn)過(guò)曝PMMA對(duì)黑磷的摻雜效應(yīng)。改變過(guò)曝電子束的計(jì)量,來(lái)研究過(guò)曝PMMA摻雜性能的變化,進(jìn)而利用這種摻雜效應(yīng)來(lái)對(duì)黑磷進(jìn)行選擇性摻雜,從而制備一系列黑磷平面器件。2.對(duì)黑磷摻雜機(jī)理進(jìn)行進(jìn)一步研究,并成功應(yīng)用于其它二維半導(dǎo)體材料。3.利用雙柵極器件結(jié)構(gòu),在同一個(gè)器件上既實(shí)現(xiàn)雙向整流器件的功能,又實(shí)現(xiàn)極性可控晶體管的功能,這對(duì)于未來(lái)器件集成及相應(yīng)邏輯設(shè)計(jì)具有一定的推動(dòng)作用。4.通過(guò)機(jī)械剝離的方式,將黑磷少層樣品轉(zhuǎn)移到化學(xué)氣相沉積生長(zhǎng)在硅片表面的石墨烯上,形成黑磷-石墨烯異質(zhì)結(jié),并對(duì)異質(zhì)結(jié)的電學(xué)特性進(jìn)行分析,發(fā)現(xiàn)石墨烯可以很好的作為少層黑磷器件的接觸電極。
[Abstract]:In recent years, thin layer black phosphorus, as a channel material of FET, has shown the characteristics of high switching ratio and high mobility, which has attracted the attention of researchers. The results show that black phosphorus is a P-type semiconductor, similar to graphene. It has a folded layered structure. The band gap of bulk structure is about 0.3 EV, and the band gap increases with the decrease of atomic layers in bulk, and the band gap of monolayer black phosphorus is about 1.8 EV. At room temperature, the carrier mobility of the hole can be close to 1000 cm2V-1S-1, which has various heterosexual electrical transport characteristics and optoelectronic properties. Because black phosphorus has so many excellent properties, various devices such as field effect transistor, phototransistor, heterojunction, gas sensor and CMOS have been fabricated based on black phosphorus. However, the black phosphorus material is easy to absorb water and oxygen in the air, which leads to the deterioration of its electrical properties. In addition, the intrinsic black phosphorus is a hole-doped bipolar semiconductor material, in order to apply black phosphorus to the future logic circuits. A stable doping method is needed to convert P-type black phosphorus to N-type black phosphorus in order to make full use of the excellent electrical properties of black phosphorus to fabricate the logic circuits based on black phosphorus. Therefore, this thesis will focus on the instability and complementary doping in black phosphorus air. The main results are as follows: 1. The over-exposed PMMA is used to protect the black phosphorus device and the doping effect of over-exposed PMMA on black phosphorus is found. The change of doping properties of overexposed PMMA was studied by changing the measurement of overaerated electron beam, and then the black phosphorus was selectively doped by this doping effect, and a series of black phosphorus planar devices. 2. The mechanism of black phosphorus doping was further studied and successfully applied to other two-dimensional semiconductor materials. 3. Using double gate device structure, the function of bidirectional rectifier and polarity controllable transistor can be realized on the same device, which will promote device integration and corresponding logic design in the future. The black phosphorus thin layer sample was transferred to the graphene deposited on the surface of silicon wafer by mechanical stripping to form the black phosphorus-graphene heterojunction, and the electrical properties of the heterojunction were analyzed. It is found that graphene can be used as a contact electrode for less layer black phosphorus devices.
【學(xué)位授予單位】：中國(guó)科學(xué)院大學(xué)(中國(guó)科學(xué)院物理研究所)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN304.17

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