本文選題：CuO:Ce + 光學(xué)性質(zhì)　； 參考：《吉林大學(xué)》2017年碩士論文

【摘要】：稀土元素具有獨(dú)特的電子結(jié)構(gòu),使得稀土元素展現(xiàn)良好的光學(xué)及磁學(xué)性質(zhì)。將稀土元素注入到非磁性半導(dǎo)體中有望設(shè)計(jì)出同時(shí)具有磁學(xué)、光學(xué)及半導(dǎo)體性質(zhì)的稀磁半導(dǎo)體材料。氧化銅是一種適合作為主體材料的非磁性半導(dǎo)體材料。將鈰元素引入氧化銅半導(dǎo)體中,可以使摻雜后的體系同時(shí)具有光學(xué)與磁學(xué)優(yōu)良的性質(zhì)和更廣的應(yīng)用前景。本文采用氣—霧相化學(xué)沉積及隨后的熱處理方法合成出了氧化銅和鈰摻雜氧化銅稀磁半導(dǎo)體材料。通過結(jié)構(gòu)分析表明稀土元素鈰作為雜質(zhì)原子摻入到氧化銅半導(dǎo)體主體結(jié)構(gòu)的晶格中。在氧化銅半導(dǎo)體材料中注入有磁性的稀土離子,雜質(zhì)離子會(huì)占據(jù)晶體中出現(xiàn)的晶格空位,進(jìn)入到晶體中,且分布均勻。研究了未摻雜的氧化銅半導(dǎo)體材料與鈰摻雜的氧化銅半導(dǎo)體材料的光學(xué)性質(zhì)。鈰摻雜的氧化銅半導(dǎo)體材料的熒光強(qiáng)度明顯強(qiáng)于未摻雜的氧化銅半導(dǎo)體材料;鈰的摻雜增大了氧化銅半導(dǎo)體材料對(duì)可見光吸收的強(qiáng)度及范圍;鈰摻雜的氧化銅稀磁半導(dǎo)體材料與氧化銅半導(dǎo)體材料的直接帶隙分別為1.68 e V和1.75 e V。鈰元素的摻雜為氧化銅半導(dǎo)體材料引入了雜質(zhì)能級(jí),減小了氧化銅半導(dǎo)體材料的帶隙。研究了鈰摻雜氧化銅半導(dǎo)體稀磁半導(dǎo)體材料的磁學(xué)性質(zhì),表現(xiàn)出室溫鐵磁性,其磁性大小是0.04 emu/g;鈰摻雜氧化銅稀磁半導(dǎo)體材料的磁性主要來源于鈰原子4f電子的間接交換作用。運(yùn)用第一性原理對(duì)三種不同的結(jié)構(gòu)模型進(jìn)行了結(jié)構(gòu)優(yōu)化及自旋態(tài)密度的計(jì)算,理論計(jì)算出了氧空位的存在與鈰元素的摻雜均對(duì)鈰摻雜氧化銅稀磁半導(dǎo)體材料提供了磁矩。鈰原子f軌道所產(chǎn)生的1.099μB的磁矩是鈰摻雜氧化銅稀磁半導(dǎo)體材料磁性的主要來源。
[Abstract]:Rare earth elements exhibit excellent optical and magnetic properties due to their unique electronic structure. It is promising to design dilute magnetic semiconductors with magnetic, optical and semiconductor properties by injecting rare earth elements into nonmagnetic semiconductors. Copper oxide is a kind of nonmagnetic semiconductor material suitable for the main material. The addition of cerium into copper oxide semiconductor can make the doped system have excellent optical and magnetic properties and wider application prospect. In this paper, copper oxide and cerium doped copper oxide diluted magnetic semiconductors were synthesized by gas-fog chemical deposition and subsequent heat treatment. The structure analysis shows that the rare earth element cerium is doped into the lattice of copper oxide semiconductor as an impurity atom. Magnetic rare earth ions are implanted into copper oxide semiconductors and impurity ions occupy the lattice vacancies in the crystals and are distributed uniformly. The optical properties of undoped copper oxide semiconductors and cerium doped copper oxide semiconductors were investigated. The fluorescence intensity of cerium doped copper oxide semiconductors is stronger than that of undoped copper oxide semiconductors, and cerium doping increases the intensity and range of visible light absorption of copper oxide semiconductors. The direct band gap of cerium doped copper oxide diluted magnetic semiconductor and copper oxide semiconductor is 1.68 EV and 1.75 EV, respectively. The doping of cerium introduces the impurity energy level into the copper oxide semiconductor material and reduces the band gap of the copper oxide semiconductor material. The magnetic properties of cerium doped copper oxide thin magnetic semiconductors have been studied. The magnetic properties of cerium doped copper oxide thin magnetic semiconductors show room temperature ferromagnetism, whose magnetic size is 0.04 emu / g. The magnetic properties of cerium doped copper oxide thin magnetic semiconductors are mainly derived from the indirect exchange of cerium atom 4f electrons. The structure optimization and spin state density calculation of three different structure models are carried out by first principle. It is theoretically calculated that the existence of oxygen vacancy and the doping of cerium provide magnetic moment for cerium doped copper oxide diluted magnetic semiconductor material. The magnetic moment of 1.099 渭 B produced by the f orbital of cerium atom is the main source of magnetic properties of cerium doped copper oxide diluted magnetic semiconductors.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN304

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