本文選題：低噪聲放大器 + 超寬帶　； 參考：《南京理工大學》2017年碩士論文

【摘要】：低噪聲放大器位于射頻接收機前端,是微波系統(tǒng)的核心部件,其性能好壞直接影響到接收機靈敏度,以及整個系統(tǒng)的噪聲系數(shù)。同時超寬帶技術(shù)發(fā)展迅猛,性能優(yōu)良的超寬帶低噪聲放大器具有很高的研究價值。本論文的主要內(nèi)容是設(shè)計并實現(xiàn)了一款DC-18GHz超寬帶低噪聲放大器。文章首先對超寬帶低噪聲放大器的研究背景及發(fā)展現(xiàn)狀進行了調(diào)研,然后對低噪聲放大器的相關(guān)理論與設(shè)計方法進行了詳細的介紹與分析。通過比較分析幾種常用的寬帶放大電路設(shè)計方法,最終選擇負反饋法作為本文實現(xiàn)超寬帶低噪聲放大器的設(shè)計方法。針對設(shè)計指標,選擇無封裝HEMT管芯,采用三級放大器級聯(lián)的電路結(jié)構(gòu),單電源供電,微帶與分立元件相結(jié)合實現(xiàn)匹配網(wǎng)絡(luò)。第一級放大電路采用并聯(lián)電阻負反饋結(jié)構(gòu)以改善放大器穩(wěn)定性、拓展帶寬,同時懫用場效應(yīng)管并聯(lián)結(jié)構(gòu)優(yōu)化寬帶噪聲性能;第二級、第三級放大電路主要作用是提高增益,改善增益平坦度;輸出匹配采用有耗匹配網(wǎng)絡(luò),提高系統(tǒng)穩(wěn)定性,改善輸出反射系數(shù)。本文使用ADS仿真軟件分別對放大器進行了直流仿真、S參數(shù)仿真以及版圖-原理圖聯(lián)合仿真。低噪聲放大器電路拓撲結(jié)構(gòu)設(shè)計完成后,采用直接調(diào)諧法對電路進行優(yōu)化設(shè)計,得到了比較滿意的仿真結(jié)果。放大器采用微組裝工藝將薄膜電路、管芯等元器件直接燒結(jié)在腔體表面,元件之間使用金絲鍵合技術(shù)實現(xiàn)互聯(lián)。實際測試結(jié)果顯示該低噪聲放大器在DC-18GHz帶寬內(nèi)噪聲系數(shù)小于2.5dB,增益大于22dB,整機功耗僅為210mW。結(jié)果表明,該放大器具有良好的超寬帶特性。
[Abstract]:Low noise amplifier (LNA) is the core component of microwave system which is located in the front end of RF receiver. Its performance directly affects the sensitivity of receiver and the noise coefficient of the whole system. At the same time, ultra-wideband (UWB) low noise amplifiers with excellent performance have high research value. The main content of this thesis is to design and implement a DC-18GHz ultra-wideband low-noise amplifier. In this paper, the research background and development status of UWB LNA are investigated, and then the related theory and design method of LNA are introduced and analyzed in detail. By comparing and analyzing several common design methods of wideband amplifier, the negative feedback method is chosen as the design method of UWB LNA in this paper. According to the design index, the unencapsulated HEMT core is selected, the three-stage amplifier cascade circuit structure is adopted, the single power supply, the combination of microstrip and discrete element to realize the matching network. The first stage amplifier adopts the parallel resistor negative feedback structure to improve the stability of the amplifier and expand the bandwidth. At the same time, the field effect tube parallel structure is used to optimize the wideband noise performance, the second stage, the third stage amplifier circuit is mainly used to improve the gain, The gain flatness is improved, and the lossy matching network is used in the output matching to improve the stability of the system and the output reflection coefficient. In this paper, the ADS simulation software is used to simulate the DC simulation parameters and the layout-schematic simulation of the amplifier. After the circuit topology design of low noise amplifier is finished, the circuit is optimized by direct tuning method, and satisfactory simulation results are obtained. The elements such as thin film circuit and tube core are sintered directly on the surface of the cavity by microassembly technology. The elements are interlinked by gold wire bonding technology. The actual test results show that the noise coefficient of the low noise amplifier is less than 2.5 dB in the DC-18GHz bandwidth, the gain is more than 22 dB, and the power consumption is only 210 MW. The results show that the amplifier has good UWB characteristics.
【學位授予單位】：南京理工大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN722.3

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本文編號：1915896