本文選題：銻化鎵 + 晶體　； 參考：《天津大學(xué)》2015年碩士論文

【摘要】：GaSb是直接帶隙半導(dǎo)體材料,禁帶寬度為0.725eV,晶格常數(shù)為0.60959nm。GaSb可以與各種三元、四元的III-V族化合物半導(dǎo)體材料的晶格常數(shù)相匹配,因此由晶格失配導(dǎo)致的應(yīng)力、缺陷等問題大大減少。GaSb已經(jīng)成為制備長(zhǎng)波LED及光電探測(cè)器、光纖通信器件的重要襯底材料。目前制備GaSb單晶通常使用直拉法。該方法的優(yōu)點(diǎn)是可以觀察晶體在各個(gè)環(huán)節(jié)的生長(zhǎng)狀態(tài),及時(shí)調(diào)整生長(zhǎng)參數(shù),缺點(diǎn)是GaSb熔體表面極易氧化而產(chǎn)生浮渣,妨礙引晶和單晶生長(zhǎng)過程,且生長(zhǎng)過程中可能引入較多微缺陷。本文采用液態(tài)覆蓋劑封閉熔體直拉法,開展GaSb單晶材料生長(zhǎng)工藝研究。研究GaSb晶體生長(zhǎng)的基本理論,分析可能出現(xiàn)的異�，F(xiàn)象,為實(shí)驗(yàn)設(shè)計(jì)與工藝改進(jìn)提供理論依據(jù)。根據(jù)GaSb熔體的物理特性選取合適的液封劑,避免GaSb熔體表面發(fā)生氧化反應(yīng)。建立GaSb單晶生長(zhǎng)計(jì)算機(jī)仿真模擬模型,設(shè)計(jì)加熱器與保溫層結(jié)構(gòu),獲得有利于GaSb單晶穩(wěn)定生長(zhǎng)的熱場(chǎng)。全面優(yōu)化引晶、放肩、收肩、等徑、收尾等階段的晶體生長(zhǎng)工藝,改進(jìn)熱處理、切割、研磨、拋光等晶體加工工藝,成功制備出2英寸的GaSb單晶片。分析GaSb單晶生長(zhǎng)缺陷的影響因素、類型與形成機(jī)理,通過優(yōu)化熱場(chǎng)設(shè)計(jì),采取小角度放肩生長(zhǎng)工藝,控制固液交界面的形貌,調(diào)整GaSb多晶料的化學(xué)計(jì)量比,去除單晶爐內(nèi)與GaSb多晶料中的雜質(zhì)等方式,有效減少GaSb單晶中的微缺陷。
[Abstract]:GaSb is a direct band-gap semiconductor material with a bandgap width of 0.725eV, and lattice constant of 0.60959nm.GaSb can match the lattice constants of various ternary, quaternary III-V compound semiconductors, thus resulting in the stress caused by lattice mismatch. Defects and other problems have been greatly reduced. GASB has become an important substrate material for the fabrication of long wave LED, photodetectors and optical fiber communication devices. At present, Czochralski method is usually used to prepare GaSb single crystals. The advantage of this method is that it can observe the growth state of crystal in every link and adjust the growth parameters in time. The drawback is that the surface of GaSb melt is easily oxidized and resulting in dross, which hinders the process of crystal induction and single crystal growth. And more microdefects may be introduced into the growth process. In this paper, the growth process of GaSb single crystal material was studied by using liquid covering agent closed melt Czochralski method. The basic theory of GaSb crystal growth is studied, and the possible abnormal phenomena are analyzed, which provides theoretical basis for experimental design and technological improvement. According to the physical properties of GaSb melt, the proper liquid sealing agent was selected to avoid the oxidation reaction on the surface of GaSb melt. The computer simulation model of GaSb single crystal growth is established and the structure of heater and insulation layer is designed. The thermal field is obtained which is favorable to the stable growth of GaSb single crystal. The crystal growth process in the stages of crystal induction, shoulder setting, shoulder closing, equal-diameter and finishing was optimized, and the crystal processing technology such as heat treatment, cutting, grinding and polishing was improved, and a 2-inch GaSb single crystal wafer was successfully prepared. The influencing factors, types and formation mechanism of GaSb single crystal growth defects were analyzed. By optimizing the thermal field design, adopting the small angle shoulder placement growth process, the morphology of the solid-liquid interface was controlled, and the stoichiometric ratio of the GaSb polycrystalline material was adjusted. In order to reduce the microdefects in GaSb single crystal effectively, the impurity in single crystal furnace and GaSb polycrystalline material are removed.
【學(xué)位授予單位】：天津大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.2;O78

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本文編號(hào)：1912266