本文選題：銻化鎵納米線 + 硫化銻納米線�。� 參考：《華中科技大學(xué)》2015年碩士論文

【摘要】：銻化鎵作為重要的III-V族半導(dǎo)體材料,擁有高的空穴遷移率850 cm2/Vs和合適的帶隙(0.7 eV)被用來(lái)制作光探測(cè)器件,尤其是高速響應(yīng)的紅外光探測(cè)器件。銻化鎵屬于低阻抗高遷移率材料,用銻化鎵納米線作光探測(cè)器材料,其靈敏度和探測(cè)率等性能相對(duì)較高,適合探測(cè)光強(qiáng)較小的可見(jiàn)光和近紅外光。同樣是銻屬化合物的硫化銻納米線也是很好的光電子材料,擁有帶隙(1.5~2.2 eV)能探測(cè)近紫外到近紅外的光,可以作為寬光譜探測(cè)應(yīng)用。硫化銻屬于高阻抗材料低遷移率材料,用硫化銻納米線作光探測(cè)器材料,其光開(kāi)關(guān)穩(wěn)定性能相對(duì)較好,適合探測(cè)不同光強(qiáng)的紫外光至近紅外光范圍。但器件的響應(yīng)度和靈敏度等性能不如銻化鎵,因此通過(guò)改進(jìn)器件的結(jié)構(gòu),可以使得性能得到提升。本論文的主要內(nèi)容包括如下兩方面:1.采用化學(xué)氣相沉積法在硅基底上生長(zhǎng)銻化鎵納米線,并在硅/二氧化硅基底上制備基于單根銻化鎵納米線的光探測(cè)器件。通過(guò)性能測(cè)試發(fā)現(xiàn),制作好的器件展現(xiàn)出極高的靈敏度,快速的響應(yīng)速度以及穩(wěn)定的開(kāi)關(guān)特性。在波長(zhǎng)700 nm、光強(qiáng)度0.2 mW/cm2的光照下,顯示出光響應(yīng)度為295 A/W,響應(yīng)時(shí)間為80 ms。而基于柔性基底上的光探測(cè)器,顯示出可比擬硅/二氧化硅基底上的性能并且擁有更低的暗電流。同樣條件下的光照時(shí),柔性探測(cè)器的探測(cè)率達(dá)到9.7×109瓊斯,等效噪聲功率達(dá)到2.0×10-12W/Hz1/2。2.同樣使用簡(jiǎn)單的化學(xué)氣相沉積法制備出單晶結(jié)構(gòu)高質(zhì)量的硫化銻納米線,并對(duì)硫化銻納米線進(jìn)行金納米顆粒的修飾,同時(shí)制作出基于硅/二氧化硅基底上的金納米顆粒修飾的硫化銻納米線光探測(cè)器件和未修飾的器件。通過(guò)對(duì)兩種器件的性能比較發(fā)現(xiàn),經(jīng)過(guò)金納米顆粒修飾后,光電流得到明顯提高,響應(yīng)時(shí)間減少,并且對(duì)現(xiàn)象的成因進(jìn)行了研究解釋。而對(duì)柔性基底上的光探測(cè)器件研究顯示,修飾同樣使得器件的性能增加,白光響應(yīng)度從4.9 A/W提高到20A/W。
[Abstract]:As an important III-V semiconductor material, gallium antimonide has a high hole mobility of 850 cm2/Vs and a suitable bandgap of 0.7 EV), which is used to fabricate photodetectors, especially those with high response to high speed. Gallium antimonide is a kind of low impedance and high mobility material. The sensitivity and detectivity of GaSb nanowires are relatively high, so it is suitable for detecting visible and near infrared light with low light intensity. Antimony sulfide nanowires, which are also antimony compounds, are also very good optoelectronic materials with band gap 1.52.2eV) which can detect near ultraviolet to near infrared light and can be used as wide spectrum detection applications. Antimony sulfide is a kind of high impedance material and low mobility material. Using antimony sulfide nanowires as photodetector material, the stability of optical switch is relatively good, which is suitable for detecting the range of ultraviolet to near infrared light with different light intensities. However, the responsivity and sensitivity of the device are not as good as that of gallium antimonide, so the performance can be improved by improving the structure of the device. The main contents of this thesis include the following two aspects: 1. Gallium antimonide nanowires were grown on silicon substrate by chemical vapor deposition and photodetectors based on single gan nanowires were prepared on silicon / silica substrates. The performance tests show that the fabricated devices exhibit very high sensitivity, fast response speed and stable switching characteristics. When the wavelength is 700nm and the light intensity is 0.2 mW/cm2, the light responsivity is 295 A / W and the response time is 80 Ms. Photodetectors based on flexible substrates show comparable performance on silicon / silica substrates and have lower dark currents. Under the same illumination conditions, the detectivity of the flexible detector is 9.7 脳 109 Jones, and the equivalent noise power is 2.0 脳 10 ~ (-12) W / Hz / 2.2. The high quality antimony sulfide nanowires with single crystal structure were also prepared by simple chemical vapor deposition method, and the antimony sulfide nanowires were modified with gold nanoparticles. At the same time, the antimony sulfide nanowire photodetectors and unmodified devices were fabricated based on gold nanoparticles on silicon / silica substrate. By comparing the performance of the two devices, it is found that the photocurrent is obviously improved and the response time is reduced after the gold nanoparticles are modified. The causes of the phenomenon are also studied and explained. The study of photodetectors on the flexible substrate shows that the modification also increases the performance of the device, and the white light responsivity increases from 4.9 A / W to 20 A / W.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN36

【參考文獻(xiàn)】

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