本文選題：蒙特卡洛 + 雪崩光電二極管�。� 參考：《華中科技大學》2015年碩士論文

【摘要】：隨著器件的尺寸的越來越小,一些傳統(tǒng)的半導體器件的模擬方法都存在不可避免的局限性。在小尺寸領(lǐng)域,蒙特卡洛方法作為一種可靠的模擬方法在為微觀方面得到了廣泛的應(yīng)用。隨著互聯(lián)網(wǎng)的高速發(fā)展,網(wǎng)絡(luò)上需要承載的數(shù)據(jù)越來越多,這對光通信網(wǎng)絡(luò)的帶寬提出了更高的要求,而光電二極管作為光接收的核心部件,因此對它的性能要求也越來越高,傳統(tǒng)的p-i-n光電二極管已經(jīng)無法滿足光通信系統(tǒng)對帶寬的要求。雪崩光電二極管因為其高靈敏度和高操作速度越來越適用于光纖通信系統(tǒng),而且能夠提供更高的靈敏度和信噪比。鑒于這些好處,雪崩光電二極管也廣泛的應(yīng)用于其他領(lǐng)域,比如光子計數(shù)器、成像應(yīng)用和激光測距等。越來越多的研究人員開始關(guān)注對雪崩光電二級管的特性的研究。本文在對雪崩光電二極管的各種模型比較中,建立了一種簡化的雪崩光電二極管蒙特卡洛計算模型,并且編寫出算法程序,在軟件lcc上運行算法程序,對InP APDs和InAlAs APDs的過剩噪聲和雪崩增益進行了模擬計算,分析得出:對這兩種材料來說,雪崩區(qū)域?qū)挾鹊臏p小都會導致過剩噪聲的降低,InP雪崩光電二極管可以選擇空穴注入來產(chǎn)生倍增,InAlAs雪崩光電二極管可以選擇電子注入來產(chǎn)生倍增,這樣就可以得到較低的過剩噪聲,同時分析指出在薄層器件中,死區(qū)效應(yīng)是無法忽略的。最后運行算法程序,對四種增益材料的雪崩光電二極管的信噪比進行了計算,得出它們的最佳工作點,可以用來指導光接收機的設(shè)計。
[Abstract]:As the size of the device becomes smaller and smaller, some traditional methods of semiconductor device simulation have inevitable limitations. In the field of small scale, Monte Carlo method has been widely used as a reliable simulation method in microscopic aspects. With the rapid development of the Internet, more and more data need to be carried on the network, which puts forward higher requirements for the bandwidth of the optical communication network. As the core component of optical reception, photodiodes require more and more high performance. Traditional p-i-n photodiodes can not meet the bandwidth requirements of optical communication systems. Avalanche photodiodes are more and more suitable for optical fiber communication systems because of their high sensitivity and high operating speed, and can provide higher sensitivity and signal-to-noise ratio (SNR). In view of these advantages, avalanche photodiodes are also widely used in other fields, such as photon counters, imaging applications and laser ranging. More and more researchers are focusing on the characteristics of avalanche photodiodes. In this paper, a simplified Monte Carlo calculation model of avalanche photodiode is established in the comparison of various models of avalanche photodiode, and an algorithm program is written to run the algorithm program on the software lcc. The excess noise and avalanche gain of InP APDs and InAlAs APDs are simulated and calculated. The decrease of the width of the avalanche region will lead to the reduction of excess noise. InP avalanche photodiodes can choose hole injection to produce multiplication. InAlAs avalanche photodiode can select electron injection to produce multiplication. In this way, low excess noise can be obtained, and it is pointed out that the dead-time effect can not be ignored in thin layer devices. Finally, the SNR of the avalanche photodiodes of four kinds of gain materials is calculated by running the algorithm program, and their optimum operating points are obtained, which can be used to guide the design of optical receivers.
【學位授予單位】：華中科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN312.7

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本文編號：1885247