本文選題：薄膜體聲波諧振器(FBAR) + 聚酰亞胺(polyimide)�。� 參考：《浙江大學》2016年碩士論文

【摘要】：近年來隨著可穿戴設備等智能硬件的興起,人們對電子元器件的微型化、柔性化、透明化的需求越來越迫切。薄膜體聲波諧振器(FBAR)是一種應用廣泛的MEMS高頻器件,相比其它頻率器件FBAR具有體積更小,品質因數更高等優(yōu)點,由FBAR構成的濾波器、雙工器被應用在最新的iphone手機等產品中；FBAR具有高靈敏度的特點,被廣泛用于醫(yī)學、生物和物理等各種傳感領域�？梢灶A見,在未來電子產品中,柔性、透明的FBAR將有極為廣泛的應用前景。本文提出一種新型FBAR結構,使用聚合物作為支撐層,簡化了FBAR制備工藝,提高了成品率,可以將FBAR做在任意基底上,具有柔性和透明的潛能。經過實驗驗證,新型FBAR與傳統(tǒng)結構FBAR性能相當。并基于該新型結構FBAR,提出了多種新型的實際應用方案。具體的研究內容和成果如下：1、建立了新型FBAR仿真模型。用ADS軟件進行了Mason模型仿真,用Comsol軟件進行了有限元仿真分析。根據理論分析和不同材料的聲阻抗特性,對基底材料、支撐層polymer材料和支撐層厚度這3個條件進行了對照仿真實驗。得到了制作新型FBAR最佳支撐層材料-聚酰亞胺(polyimide簡稱PI)及其厚度(9μm)等條件。2、獲得了成熟穩(wěn)定的新型結構FBAR的制備工藝。在實驗室MEMS工藝條件下,成功制備出了不同厚度P1支撐層的新型FBAR器件(以下簡稱PI-FBAR)。測試結果與仿真結果、背刻蝕FBAR結果進行了對比分析。經測試,2μm厚度ZnO壓電層的PI-FBAR諧振頻率在1.5GHz左右,與傳統(tǒng)結構相同；當支撐層PI厚度9μm后器件性能與傳統(tǒng)結構性能相當,Q值普遍能達500左右。3、制備了不同基底上的PI-FBAR。將PI-FBAR制備在了銅片、玻璃和紙襯底上。并對這些不同基底的FBAR諧振頻率fr和品質因數Q進行了對比和理論分析。驗證了這種新型FBAR具有柔性和透明的潛能。4、提出了新型FBAR的多種應用。包括(1)基于它的溫度傳感,紙上FBAR的溫度系數為-45.47 ppm/k,銅上的為-63.37 ppm/k,Si上的為-54.56 ppm/k。(2)基于新結構,選用鐵磁性材料Ni做電極,提出了一種新型的磁力傳感器。(3)基于新結構提出了一種紫外線傳感器(4)本文還驗證了新型FBAR制作在粗糙表面的可行性,顯示了新型FBAR與傳統(tǒng)CMOS電路集成的可行性。這些應用都具有廣闊的市場前景。
[Abstract]:In recent years, with the rise of smart hardware such as wearable devices, the need for miniaturization, flexibility and transparency of electronic components becomes more and more urgent. Thin Film bulk Acoustic Resonator (FBA) is a widely used MEMS high frequency device. Compared with other frequency devices, FBAR has the advantages of smaller volume, higher quality factor and so on. The filter is composed of FBAR. Duplexer is widely used in many kinds of sensing fields, such as medicine, biology, physics and so on. It can be predicted that flexible and transparent FBAR will be widely used in electronic products in the future. In this paper, a new type of FBAR structure, which uses polymer as the supporting layer, simplifies the preparation process of FBAR, improves the yield of FBAR, and can make FBAR on any substrate with the potential of flexibility and transparency. The experimental results show that the performance of the new FBAR is comparable to that of the traditional FBAR. Based on the new structure FBARs, several new practical application schemes are proposed. The specific research contents and results are as follows: 1. A new FBAR simulation model is established. The Mason model is simulated with ADS software and the finite element analysis is carried out with Comsol software. According to the theoretical analysis and the acoustic impedance characteristics of different materials, the three conditions of substrate material, support layer polymer material and support layer thickness are compared and simulated. The optimum support layer material of FBAR, polyimide (Pi) and its thickness of 9 渭 m, were obtained. The preparation process of FBAR with mature and stable structure was obtained. Under the condition of laboratory MEMS, a new type of FBAR device with different thickness P1 support layer (PI-FBA) has been successfully fabricated. The test results are compared with the simulation results and the back etching FBAR results. The PI-FBAR resonance frequency of the ZnO piezoelectric layer with 2 渭 m thickness is about 1.5GHz, which is the same as that of the traditional structure, and the PI-FBARs on different substrates have been prepared when the PI-FBARs on different substrates are obtained when the PI-FBARs on different substrates are similar to those of the conventional structures when the Pi thickness of the support layer is 9 渭 m. PI-FBAR was prepared on copper, glass and paper substrates. The FBAR resonance frequency fr and the quality factor Q of these different substrates are compared and analyzed theoretically. The new FBAR has the potential of flexibility and transparency. Finally, many applications of the new FBAR are proposed. Including 1) based on its temperature sensing, the temperature coefficient of FBAR on paper is -45.47 ppm / kg, and on copper is -63.37 ppm / kg / kg Si, -54.56 ppm / k.) based on the new structure, the ferromagnetic material Ni is used as electrode. This paper presents a new type of magnetic force sensor based on the new structure. (4) this paper also verifies the feasibility of the new FBAR fabrication on the rough surface and shows the feasibility of integrating the new FBAR with the traditional CMOS circuit. These applications have broad market prospects.
【學位授予單位】：浙江大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：TN65

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本文編號：1885230