本文選題：有機場效應晶體管 + 氣體傳感器��； 參考：《電子科技大學》2015年碩士論文

【摘要】：自上世紀八十年代第一個有機場效應晶體管(Organic Field-Effect Transistor,OFET)問世以來,它便在化學、物理、材料以及微電子等領域受到廣泛關注。與此同時,基于OFET器件的多功能器件由于其潛在的巨大商業(yè)價值而逐漸成為研究的重點。本文以OFET為傳感器件,在對介電層厚度進行優(yōu)化的基礎上,重點研究了有源層摩擦取向?qū)FET器件電學特性和氣敏特性的影響。研究內(nèi)容如下:1.基于PMMA/PS雙介電層結(jié)構(gòu)的OFET器件性能優(yōu)化。采用聚甲基丙烯酸甲酯(PMMA)、聚苯乙烯(PS)作為介電層,并五苯作為有機半導體層,分別研究了PMMA和PS不同厚度對OFET器件性能的影響。實驗中設計了兩組OFET器件,一組固定PMMA厚度為280 nm,PS厚度分別為140 nm、170 nm、220 nm和290 nm。另一組固定PS厚度為200 nm,PMMA厚度分別為140 nm、180 nm、220 nm和250 nm。測試結(jié)果表明,當PMMA厚度為280 nm,PS厚度為220 nm時,器件具有最佳性能,遷移率達到0.15 cm2/Vs,電流開關比為2.8?105。2.有源層摩擦取向?qū)赑S單介電層的并五苯OFET器件氣敏特性的影響。利用普通的尼龍刷對OFET器件的有源層進行摩擦取向,摩擦方向包括垂直、斜向以及平行于源漏電極。首先研究了不同取向?qū)ζ骷妼W特性的影響,結(jié)果表明,垂直于源漏電極摩擦的器件的遷移率達到0.17 cm2/Vs,開態(tài)電流達到0.45μA,分別比未經(jīng)處理的器件提高了1倍。此外,進一步研究了不同取向?qū)ζ骷䴕饷籼匦缘挠绊?結(jié)果表明,平行于源漏電極摩擦的器件具有最優(yōu)的氣敏性能,在2 ppm的NO2氣氛下,響應度和響應時間分別達到1.3%和約70 s。3.有源層摩擦取向?qū)赑MMA/PS雙介電層的并五苯OFET器件氣敏特性的影響。在制備了高性能的PMMA/PS雙層介電層器件的基礎上,使用尼龍刷對OFET器件的有源層進行摩擦取向,摩擦方向包括垂直、斜向以及平行于源漏電極。垂直于源漏電極摩擦的器件的遷移率達到0.46 cm2/Vs,開態(tài)電流達到60.4μA,這比未經(jīng)處理的器件分別提高了2倍和1.5倍。此外,平行于源漏電極摩擦的器件具有最優(yōu)的氣敏性能,在2 ppm的NO2氣氛下,響應度和響應時間分別達到1.1%和約50 s。與PS單介電層的器件相比,無論是否經(jīng)過摩擦處理,PMMA/PS雙介電層的器件都具有更優(yōu)異的電學及氣敏性能。最后,結(jié)合氣敏機理和載流子傳輸理論,分析不同方向的摩擦取向?qū)FET器件氣敏性能產(chǎn)生不同影響的原因。
[Abstract]:Since the first organic Field-Effect transistor (Organic Field-Effect Transistor) came out in the 1980s, it has attracted wide attention in the fields of chemistry, physics, materials and microelectronics. At the same time, multifunctional devices based on OFET devices have become the focus of research because of their potential commercial value. On the basis of optimizing the thickness of dielectric layer, the influence of friction orientation of active layer on the electrical and gas sensing properties of OFET devices is studied in this paper. The research is as follows: 1. Performance optimization of OFET devices based on PMMA/PS double dielectric layer structure. The effects of different thickness of PMMA and PS on the properties of OFET devices were investigated by using polymethyl methacrylate (PMMA) and polystyrene (PS) as dielectric layer and pentabenzene as organic semiconductor layer. Two groups of OFET devices have been designed in the experiment. One set of fixed PMMA thickness is 280 nm / s PS thickness is 140 nm / s 170 nm / s 220nm and 290nm / s respectively. In the other group, the thickness of fixed PS was 200 nm and the thickness of PMMA was 140 nm, 180 nm, 220 nm and 250 nm, respectively. The experimental results show that when the thickness of PMMA is 280nm and PS thickness is 220nm, the device has the best performance, the mobility reaches 0.15 cm ~ 2 / V _ s and the current-switching ratio is 2.8 nm / 105.2. Effect of tribological orientation of active layer on gas sensing characteristics of pentaben OFET devices based on PS single dielectric layer. The active layer of OFET device is tribalized by ordinary nylon brush. The friction direction includes vertical, oblique and parallel to the source leakage electrode. The effects of different orientations on the electrical properties of the devices are studied. The results show that the mobility of the devices perpendicular to the source leakage electrode friction is 0.17 cm ~ 2 / V _ s, and the on-state current is 0.45 渭 A, which is two times higher than that of the untreated devices. Furthermore, the effects of different orientations on the gas sensing characteristics of the devices are further investigated. The results show that the devices parallel to the source leakage electrode friction have the optimal gas sensing performance. The responsivity and response time of the devices are 1.3% and 70 s.3respectively in the NO2 atmosphere of 2 ppm. Effect of tribological orientation of active layer on gas sensing characteristics of pentaben OFET devices based on PMMA/PS double dielectric layer. Based on the preparation of high performance PMMA/PS double-layer dielectric layer devices, the active layer of OFET devices is tribalized by nylon brushes. The friction directions include vertical, oblique and parallel to the source and leakage electrodes. The mobility of the devices perpendicular to the source leakage electrode friction is 0.46 cm ~ 2 / V _ s, and the on-state current is 60.4 渭 A, which is 2 times and 1.5 times higher than that of the untreated devices, respectively. In addition, the devices parallel to the source leakage electrode friction have the optimal gas sensing performance, the responsivity and the response time reach 1.1% and about 50 s in the NO2 atmosphere of 2 ppm, respectively. Compared with PS single dielectric layer devices, PMMA / PS double dielectric layer devices with or without tribological treatment have better electrical and gas sensing properties. Finally, based on the gas sensing mechanism and carrier transport theory, the causes of different effects of friction orientation on the gas sensing performance of OFET devices are analyzed.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN386

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