本文選題：溫度傳感器 + ICP刻蝕　； 參考：《合肥工業(yè)大學(xué)》2015年碩士論文

【摘要】：隨著MEMS傳感器應(yīng)用越來(lái)越普及,在對(duì)其加工工藝的要求也在不斷提高。作為MEMS器件加工的一項(xiàng)關(guān)鍵技術(shù)——ICP刻蝕技術(shù),因其刻蝕過(guò)程自動(dòng)化程度高、刻蝕側(cè)壁垂直度好、大面積刻蝕均勻性好及污染少等優(yōu)點(diǎn),目前被廣泛應(yīng)用于體硅MEMS工藝中的高深寬比刻蝕。但是由于ICP刻蝕技術(shù)的機(jī)理比較復(fù)雜,影響刻蝕結(jié)果的工藝參數(shù)較多,所以ICP刻蝕技術(shù)總體上還不夠成熟,具體表現(xiàn)在沒(méi)有具體的ICP刻蝕仿真工具軟件,刻蝕工藝參數(shù)不易調(diào)整,對(duì)刻蝕結(jié)果的預(yù)測(cè)不夠準(zhǔn)確等,所以現(xiàn)在工藝上主要通過(guò)大量的實(shí)驗(yàn)來(lái)對(duì)參數(shù)進(jìn)行調(diào)整、驗(yàn)證及改進(jìn),已達(dá)到刻蝕的要求。本論文是在本課題組前期對(duì)不同形貌結(jié)構(gòu)的刻蝕工藝進(jìn)行研究的基礎(chǔ)上,在設(shè)計(jì)溫度傳感器梳齒結(jié)構(gòu)的加工過(guò)程中,確立的ICP刻蝕工藝實(shí)驗(yàn)?zāi)康募肮に噮?shù)調(diào)整的方向。實(shí)驗(yàn)首先研究ICP刻蝕的各參數(shù)對(duì)其刻蝕結(jié)果的影響,重點(diǎn)研究刻蝕／鈍化周期、氣體流量、極板功率和偏置電壓等條件因素對(duì)刻蝕結(jié)果產(chǎn)生的影響,最后采用正交實(shí)驗(yàn)法設(shè)計(jì)實(shí)驗(yàn)方案。分別優(yōu)化得到了三種尺寸槽寬刻蝕到所需深度時(shí),其側(cè)壁垂直度達(dá)到最優(yōu)的刻蝕參數(shù)。再將最優(yōu)工藝參數(shù)應(yīng)用于某陀螺儀的實(shí)際制備中,得到了較為理想的刻蝕形貌,陀螺儀的各項(xiàng)性能指標(biāo)滿足了傳感器的實(shí)用化需求。另外,ICP刻蝕技術(shù)在對(duì)硅、二氧化硅材料以及Ⅲ-V族化合物等材料刻蝕方面的應(yīng)用越來(lái)越多,并獲得了很好的效果。MEMS的未來(lái)無(wú)可限量,ICP刻蝕技術(shù)必將越發(fā)成熟,在微納電子器件的加工中發(fā)揮應(yīng)有的作用。
[Abstract]:With the application of MEMS sensors becoming more and more popular, the requirements of its processing technology are also increasing.As a key technology of MEMS device processing, MEMS etching technology has many advantages, such as high degree of automatization of etching process, good vertical degree of etching sidewall, good uniformity of large area etching and less pollution, etc.At present, it is widely used in bulk silicon MEMS process with high aspect ratio etching.However, because of the complex mechanism of ICP etching technology and the large number of technological parameters that affect the etching results, the ICP etching technology is not mature enough on the whole. The concrete manifestation is that there is no specific ICP etching simulation tool software.The parameters of etching process are not easy to adjust and the prediction of etching results is not accurate. So the process mainly adjusts, verifies and improves the parameters through a large number of experiments, which has met the requirements of etching.This paper is based on the study of etching technology of different morphology and structure in our group, and establishes the experimental purpose of ICP etching process and the adjustment direction of process parameters in the process of designing the comb structure of temperature sensor.In the experiment, the influence of various parameters of ICP etching on the etching results is studied. The effects of etching / passivation period, gas flow rate, plate power and bias voltage on the etching results are studied.Finally, the orthogonal experiment method is used to design the experimental scheme.The optimum etching parameters are obtained when the width of the three sizes etched to the desired depth.The optimum process parameters are applied to the practical preparation of a gyroscope, and the better etching morphology is obtained. The performance of the gyroscope meets the practical needs of the sensor.In addition, ICP etching technology has been used more and more in etching silicon, silica and 鈪，

本文編號(hào)：1772380