本文選題：膠體量子點 + 微盤��； 參考：《中國科學院大學(中國科學院物理研究所)》2017年碩士論文

【摘要】：硅量子點是一種準零維的半導體納米材料,由于量子限制作用,發(fā)光效率高,明顯不同于幾乎不發(fā)光的硅體材料。此外,硅量子點還具有不含重金屬元素、儲量豐富、加工工藝成熟等優(yōu)點,引起了研究者的廣泛關注,有望在光電、光伏、生物標記、單光子源等領域發(fā)揮重要作用。我們研究了不同環(huán)境下的硅量子點的熒光光譜,并將量子點與微盤耦合,研究了微盤對量子點熒光光譜的增強作用,得到以下研究成果:1、我們研究了硅量子點熒光光譜對功率的響應曲線,通過高斯擬合,得到硅量子點熒光光譜的峰值能量和線寬,發(fā)現峰值能量隨激光功率的增加發(fā)生藍移,這是由于量子點的能態(tài)填充效應;線寬隨功率增加而變窄,這是因為硅量子點存在兩種發(fā)光機制,它們對激光功率響應不同導致的。2、我們利用低溫微區(qū)共聚焦熒光顯微掃描系統分析了與微盤耦合的量子點的熒光光譜,耦合后的量子點發(fā)光得到了明顯的增強。熒光積分光譜的強度增強約35倍。通過分析我們認為增強的主要原因是微盤增強了量子點的收集效率。3、研究了硅量子點熒光光譜的動力學衰減過程。通過比較不同條件下衰減速率、峰值移動和線寬變化分析了硅量子點熒光衰減的原因。我們發(fā)現由于光氧化和光漂白作用,空氣中的光衰減現象非常嚴重,真空中光漂白現象得到有效抑制,低溫環(huán)境下光氧化和光漂白幾乎完全抑制。
[Abstract]:Silicon quantum dots (QDs) are quasi-zero dimensional semiconductor nanomaterials. Due to the quantum limitation, the luminescence efficiency is high, which is obviously different from that of almost no luminescent silicon materials.In addition, silicon quantum dots (QDs) have many advantages, such as no heavy metal elements, abundant reserves, mature processing technology and so on, which have attracted wide attention of researchers and are expected to play an important role in photovoltaic, photovoltaic, biomarker, single photon source and other fields.We have studied the fluorescence spectra of silicon quantum dots in different environments, coupled the quantum dots with the microdisk, and studied the enhancement effect of the microdisk on the fluorescence spectra of the quantum dots.We obtained the following research result: 1, we studied the response curve of fluorescence spectrum of silicon quantum dot to power. By Gao Si fitting, we got the peak energy and linewidth of fluorescence spectrum of silicon quantum dot, and found that the peak energy of silicon quantum dot blue shifted with the increase of laser power.This is due to the filling effect of the energy states of quantum dots; the linewidth narrows with the increase of power, which is due to the existence of two luminescence mechanisms in silicon quantum dots.Due to their different response to laser power, the fluorescence spectra of quantum dots coupled with microdisk were analyzed by using a low temperature confocal fluorescence scanning system, and the luminescence of quantum dots was obviously enhanced.The intensity of the fluorescence integral spectrum is increased about 35 times.We consider that the main reason for the enhancement is that the microdisk enhances the collection efficiency of quantum dots, and the kinetic decay process of the fluorescence spectra of silicon quantum dots is studied.The reason of fluorescence decay of silicon quantum dots was analyzed by comparing the attenuation rate, peak shift and linewidth variation under different conditions.It is found that the phenomenon of light decay in air is very serious due to photooxidation and photobleaching, the phenomenon of photobleaching in vacuum is effectively suppressed, and photooxidation and photobleaching are almost completely inhibited at low temperature.
【學位授予單位】：中國科學院大學(中國科學院物理研究所)
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：O471.1

【參考文獻】

相關博士學位論文 前1條

1 肖云峰;固態(tài)光學腔量子電動力學—原理與實現[D];中國科學技術大學;2007年

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本文編號：1772044