發(fā)布時(shí)間：2018-04-19 06:56

  本文選題：膠體量子點(diǎn) + 微盤��； 參考：《中國科學(xué)院大學(xué)(中國科學(xué)院物理研究所)》2017年碩士論文

【摘要】：硅量子點(diǎn)是一種準(zhǔn)零維的半導(dǎo)體納米材料,由于量子限制作用,發(fā)光效率高,明顯不同于幾乎不發(fā)光的硅體材料。此外,硅量子點(diǎn)還具有不含重金屬元素、儲(chǔ)量豐富、加工工藝成熟等優(yōu)點(diǎn),引起了研究者的廣泛關(guān)注,有望在光電、光伏、生物標(biāo)記、單光子源等領(lǐng)域發(fā)揮重要作用。我們研究了不同環(huán)境下的硅量子點(diǎn)的熒光光譜,并將量子點(diǎn)與微盤耦合,研究了微盤對(duì)量子點(diǎn)熒光光譜的增強(qiáng)作用,得到以下研究成果:1、我們研究了硅量子點(diǎn)熒光光譜對(duì)功率的響應(yīng)曲線,通過高斯擬合,得到硅量子點(diǎn)熒光光譜的峰值能量和線寬,發(fā)現(xiàn)峰值能量隨激光功率的增加發(fā)生藍(lán)移,這是由于量子點(diǎn)的能態(tài)填充效應(yīng);線寬隨功率增加而變窄,這是因?yàn)楣枇孔狱c(diǎn)存在兩種發(fā)光機(jī)制,它們對(duì)激光功率響應(yīng)不同導(dǎo)致的。2、我們利用低溫微區(qū)共聚焦熒光顯微掃描系統(tǒng)分析了與微盤耦合的量子點(diǎn)的熒光光譜,耦合后的量子點(diǎn)發(fā)光得到了明顯的增強(qiáng)。熒光積分光譜的強(qiáng)度增強(qiáng)約35倍。通過分析我們認(rèn)為增強(qiáng)的主要原因是微盤增強(qiáng)了量子點(diǎn)的收集效率。3、研究了硅量子點(diǎn)熒光光譜的動(dòng)力學(xué)衰減過程。通過比較不同條件下衰減速率、峰值移動(dòng)和線寬變化分析了硅量子點(diǎn)熒光衰減的原因。我們發(fā)現(xiàn)由于光氧化和光漂白作用,空氣中的光衰減現(xiàn)象非常嚴(yán)重,真空中光漂白現(xiàn)象得到有效抑制,低溫環(huán)境下光氧化和光漂白幾乎完全抑制。
[Abstract]:Silicon quantum dots (QDs) are quasi-zero dimensional semiconductor nanomaterials. Due to the quantum limitation, the luminescence efficiency is high, which is obviously different from that of almost no luminescent silicon materials.In addition, silicon quantum dots (QDs) have many advantages, such as no heavy metal elements, abundant reserves, mature processing technology and so on, which have attracted wide attention of researchers and are expected to play an important role in photovoltaic, photovoltaic, biomarker, single photon source and other fields.We have studied the fluorescence spectra of silicon quantum dots in different environments, coupled the quantum dots with the microdisk, and studied the enhancement effect of the microdisk on the fluorescence spectra of the quantum dots.We obtained the following research result: 1, we studied the response curve of fluorescence spectrum of silicon quantum dot to power. By Gao Si fitting, we got the peak energy and linewidth of fluorescence spectrum of silicon quantum dot, and found that the peak energy of silicon quantum dot blue shifted with the increase of laser power.This is due to the filling effect of the energy states of quantum dots; the linewidth narrows with the increase of power, which is due to the existence of two luminescence mechanisms in silicon quantum dots.Due to their different response to laser power, the fluorescence spectra of quantum dots coupled with microdisk were analyzed by using a low temperature confocal fluorescence scanning system, and the luminescence of quantum dots was obviously enhanced.The intensity of the fluorescence integral spectrum is increased about 35 times.We consider that the main reason for the enhancement is that the microdisk enhances the collection efficiency of quantum dots, and the kinetic decay process of the fluorescence spectra of silicon quantum dots is studied.The reason of fluorescence decay of silicon quantum dots was analyzed by comparing the attenuation rate, peak shift and linewidth variation under different conditions.It is found that the phenomenon of light decay in air is very serious due to photooxidation and photobleaching, the phenomenon of photobleaching in vacuum is effectively suppressed, and photooxidation and photobleaching are almost completely inhibited at low temperature.
【學(xué)位授予單位】：中國科學(xué)院大學(xué)(中國科學(xué)院物理研究所)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O471.1

【參考文獻(xiàn)】

相關(guān)博士學(xué)位論文 前1條

1 肖云峰;固態(tài)光學(xué)腔量子電動(dòng)力學(xué)—原理與實(shí)現(xiàn)[D];中國科學(xué)技術(shù)大學(xué);2007年

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本文編號(hào)：1772044