本文選題：憶阻器 + MATLAB　； 參考：《寧夏大學(xué)》2015年碩士論文

【摘要】：1971年,美籍華人科學(xué)家Leon.Chua教授,根據(jù)事物的完整性原理,世界上首次提出了憶阻器和憶阻系統(tǒng)。它是一種全新的電子元器件,能夠把電荷量q與磁通量φ這兩個(gè)電學(xué)中基本物理量聯(lián)系起來(lái),證明兩者之間存在一定的數(shù)學(xué)關(guān)系。憶阻器被稱(chēng)為繼電阻、電容、電感之后的第四種基本無(wú)源電子元器件。在此理論提出很長(zhǎng)一段時(shí)間,并沒(méi)有引起科學(xué)家們的關(guān)注,直到2008年HP工作室的科研工作者在研究非易失性存儲(chǔ)器材料時(shí),意外的制備了具有憶阻特性的器件,第一次用物理實(shí)物證明了憶阻器存在,契合了Leon.Chua教授的理論,這才引起國(guó)內(nèi)外科學(xué)家的廣泛關(guān)注。本篇論文首先闡述了憶阻器的研究背景,概括論述了憶阻器國(guó)內(nèi)外研究現(xiàn)狀以及主要研究領(lǐng)域和方向。隨后詳細(xì)的對(duì)HP工作室研制成功的兩層TiO2薄膜憶阻器的原理、機(jī)理進(jìn)行分析敘述,并且利Matlab仿真軟件對(duì)流控憶阻器模型和壓控憶阻器模型中主要電路特征和性能進(jìn)行仿真分析,并且對(duì)每一個(gè)參數(shù)對(duì)其電路特性的影響進(jìn)行仿真分析,觀察參數(shù)對(duì)其特性的影響。此外,依據(jù)憶阻器的非線(xiàn)性特性,利用多項(xiàng)式擬合方法構(gòu)造窗函數(shù),進(jìn)行對(duì)憶阻器模型的進(jìn)一步完善。本篇論文在憶阻器應(yīng)用方面,針對(duì)先進(jìn)濾波器電路截止頻率不易調(diào)節(jié)等因素,采用段宗勝老師研制的一種新型憶阻器模型,應(yīng)用到一階低通濾波電路和二階低通濾波電路,對(duì)其特性進(jìn)行仿真驗(yàn)證,判斷是否能夠?qū)崿F(xiàn)濾波功能。新型憶阻器模型,主要改進(jìn)之處在于增加了一個(gè)參數(shù)變量,即臨界電壓值Vr,當(dāng)施加在憶阻器上的電壓比臨界電壓VT小的時(shí)候,憶阻器的狀態(tài)基本保持在特定狀態(tài)下不變；當(dāng)施加在憶阻器上的電壓比臨界電VT大的時(shí)候,憶阻器狀態(tài)開(kāi)始發(fā)生變化。
[Abstract]:In 1971, Chinese American scientist Professor Leon.Chua, according to the integrity of things, the world for the first time proposed a resistive device and amnesia system.It is a new kind of electronic component, which can relate the charge quantity Q with the basic physical quantity of magnetic flux 蠁, and prove that there is a certain mathematical relation between them.A resistor is called the fourth basic passive electronic component after resistor, capacitance and inductance.This theory was put forward for a long time and did not attract the attention of scientists until 2008 when researchers at HP Studio accidentally fabricated devices with memory characteristics while studying nonvolatile memory materials.The existence of amnesia is proved by physical objects for the first time, which accords with Professor Leon.Chua 's theory, which has attracted wide attention of scientists at home and abroad.In this paper, firstly, the background of the research is described, and the research status, the main research fields and the direction of the research at home and abroad are summarized.Then the principle and mechanism of the two-layer TiO2 film resistor developed by HP studio are analyzed and described in detail. The main circuit characteristics and performance of the Matlab simulation software in the convection controlled resistor model and the voltage-controlled resistive model are simulated and analyzed.The effects of each parameter on the circuit characteristics are simulated and analyzed.In addition, according to the nonlinear characteristics of the resistor, the window function is constructed by polynomial fitting method, and the model of the resistor is further improved.In this paper, aiming at the difficulty of adjusting the cutoff frequency of the advanced filter circuit, a new type of memory model developed by Duan Zongsheng is adopted, which is applied to the first-order low-pass filter circuit and the second-order low-pass filter circuit.The characteristics of the filter are verified by simulation to determine whether the filtering function can be realized.The main improvement of the new model is the addition of a parameter variable, that is, the critical voltage Vr. when the voltage applied on the resistor is smaller than the critical voltage VT, the state of the resistor remains basically unchanged in a specific state.When the voltage applied on the resistor is larger than the critical voltage VT, the state of the resistor begins to change.
【學(xué)位授予單位】：寧夏大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN601

【參考文獻(xiàn)】

相關(guān)博士學(xué)位論文 前1條

1 柏曉輝;基于Pt/TiO_(2-x)/TiO_2/TiO_(2+x)/Pt雙擴(kuò)展憶阻器研究[D];黑龍江大學(xué);2014年

相關(guān)碩士學(xué)位論文 前2條

1 段宗勝;基于憶阻器的濾波器設(shè)計(jì)與仿真[D];武漢科技大學(xué);2012年

2 蔡發(fā)君;憶阻器在濾波器設(shè)計(jì)中的應(yīng)用研究[D];武漢科技大學(xué);2014年

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本文編號(hào)：1766665