本文選題：硅微通道陣列 + 厚層氧化��； 參考：《長(zhǎng)春理工大學(xué)》2015年碩士論文

【摘要】：基于硅微通道陣列厚層氧化機(jī)理,對(duì)n型100晶向硅微通道陣列進(jìn)行了不同時(shí)間的濕氧氧化,用掃描電子顯微鏡進(jìn)行觀察濕氧過(guò)后通道的形貌,通道壁厚由氧化前的1.82μm變成了2.87μm,通道直徑也隨之縮小。利用Deal-Grove模型分析氧化厚度隨時(shí)間的變化關(guān)系,從中得出了氧化厚度隨時(shí)間變化的關(guān)系曲線。二維結(jié)構(gòu)下,氧化過(guò)程中發(fā)生了體積膨脹,伴隨著熱應(yīng)力的產(chǎn)生,通道外角邊明顯往外凸出,加快了氧化反應(yīng)的速率。外角區(qū)域出現(xiàn)了尖狀,外角邊變得圓滑。內(nèi)角邊由于體積膨脹向內(nèi)收縮并且變得圓滑,由于內(nèi)角邊向內(nèi)收縮阻礙了內(nèi)角的生長(zhǎng),從而減慢了內(nèi)角處氧化層的生長(zhǎng)速率,氧化過(guò)后內(nèi)角處也出現(xiàn)了尖狀。利用Abaqus有限元仿真軟件模擬單孔硅微通道結(jié)構(gòu)熱應(yīng)力分布,從熱應(yīng)力云圖中直觀的反應(yīng)出了內(nèi)角和外角的熱應(yīng)力大小以及位移。外角的最大熱應(yīng)力達(dá)到了1036N/m2,內(nèi)角的最大熱應(yīng)力為941N/m2,隨著溫度的升高熱應(yīng)力逐漸增大,外角應(yīng)力大小為負(fù)值表現(xiàn)形式為壓應(yīng)力。外角邊應(yīng)力的變化比內(nèi)角邊應(yīng)力的變化大,內(nèi)角邊熱應(yīng)力恒定為941 N/m2。整個(gè)通道外角位移最大,達(dá)到了5.4nm,內(nèi)角位移稍小,大小為5.063nm。與內(nèi)角相比外角氧化層生長(zhǎng)的較快。外角邊位移量變化比內(nèi)角邊位移量的變化大,內(nèi)角邊位移大小恒定為5.063nm。但是外角邊和內(nèi)角邊表現(xiàn)形式不同,外角邊向外凸呈弧狀,內(nèi)角邊稍向內(nèi)凹呈弓狀。由于微通道特殊的孔型陣列結(jié)構(gòu),經(jīng)過(guò)厚層絕緣氧化后Si-MCP會(huì)出現(xiàn)翹曲現(xiàn)象,用高溫整形來(lái)使得硅片平整。在溫度1250℃,重量達(dá)到450g,高溫整形4h時(shí)平整度達(dá)到0.1,整形效果最佳。
[Abstract]:Based on the thick layer oxidation mechanism of silicon microchannel array, wet oxygen oxidation of n-type 100 crystalline silicon microchannel array was carried out at different times. The morphology of the channel after wet oxygen was observed by scanning electron microscope.The wall thickness of the channel changed from 1.82 渭 m to 2.87 渭 m, and the diameter of the channel decreased.The relationship between oxidation thickness and time was analyzed by Deal-Grove model, and the curve of oxidation thickness with time was obtained.In the two dimensional structure, the volume expansion occurs in the oxidation process, and with the thermal stress, the outer corner of the channel protrudes out obviously, which accelerates the oxidation reaction rate.The outer corner area appears sharp and the outer corner edge becomes smooth.The inner corner shrinks inward because of volume expansion and becomes smooth, and the inner corner shrinks the growth of the inner angle, which slows down the growth rate of the oxide layer at the inner corner. After oxidation, the inner angle also appears sharp.The thermal stress distribution of single-hole silicon microchannel structure was simulated by Abaqus finite element simulation software. The thermal stress and displacement of the inner and outer angles were directly reflected from the thermal stress cloud diagram.The maximum thermal stress of the outer angle is 1036 N / m ~ (2) and the maximum thermal stress of the inner angle is 941 N / m ~ (2). With the increase of the temperature, the thermal stress increases gradually, and the stress of the outer angle is negative in the form of compressive stress.The variation of stress in the outer corner is larger than that in the inner edge, and the thermal stress of the inner corner is constant at 941 N / m ~ (2).The external angular displacement of the whole channel is the largest, reaching 5.4 nm, and the internal angular displacement is slightly smaller, with the size of 5.063 nm.Compared with the inner angle, the outer oxide layer grows faster.The displacement of the outer corner edge is larger than that of the inner angle edge displacement, and the displacement of the inner corner edge is constant to 5.063 nm.However, the outer corner edge and the inner corner edge are different in form, the outer corner edge is convex and the inner corner edge is slightly concave.Due to the special porous array structure of microchannel, the Si-MCP will warp after thick layer insulation oxidation, and the silicon wafer is leveled by high temperature shaping.When the temperature is 1250 鈩，

本文編號(hào)：1766595