本文選題：總劑量輻射效應(yīng) + 熱載流子注入效應(yīng)��； 參考：《西安電子科技大學(xué)》2015年碩士論文

【摘要】：空間站、人造衛(wèi)星等航天設(shè)備在空間環(huán)境中,會長期受到可靠性效應(yīng)和總劑量輻射效應(yīng)的影響。本文針對宇航環(huán)境中存在的可靠性效應(yīng)和輻射效應(yīng)以及兩者之間相互的影響進行了分析。重點研究了納米尺寸工藝下NMOS器件的總劑量輻射效應(yīng)和熱載流子效應(yīng)的關(guān)聯(lián)性。使用Sentaurus-TCAD軟件分別仿真分析了兩種效應(yīng)對器件電學(xué)參數(shù)的影響,并在此基礎(chǔ)上對二者的關(guān)聯(lián)性做了仿真嘗試。具體工作內(nèi)容如下:(1)研究了總劑量輻射效應(yīng)對MOS納米尺寸器件的作用機理。使用Sentaurus TCAD軟件建立了65nm NMOS器件模型,仿真了在不同的劑量條件下,器件的泄露電流的變化。仿真分析結(jié)果顯示,當劑量達到500krad的條件下,器件的泄露電流從1.68E-09A增加至8.76E-07A,增加了兩個數(shù)量級。(2)研究了熱載流子注入效應(yīng)對MOS納米尺寸器件的作用機理以及熱載流子效應(yīng)預(yù)估壽命的模型。使用Sentaurus TCAD軟件仿真了65nm NMOS器件在熱載流子注入效應(yīng)下參數(shù)隨時間的變化情況。仿真結(jié)果顯示,在應(yīng)力偏置為Vgs=Vds=2V的條件下,加速應(yīng)力時間為105s之后,該器件的飽和漏電流增加了6%。根據(jù)器件的參數(shù)變化與時間呈冪率關(guān)系,推算出其與時間的冪率指數(shù)為0.39。(3)研究了兩種效應(yīng)之間可能存在的關(guān)聯(lián)性,由于總劑量效應(yīng)導(dǎo)致了溝道中電子濃度的增加,而在納米器件下,溝道濃度的增加會引起溝道中出現(xiàn)大量的電子電子散射現(xiàn)象,散射幾率與溝道的電子濃度呈現(xiàn)正相關(guān),從而加劇了溝道熱載流子現(xiàn)象。所以二者的結(jié)果不會是簡單疊加的結(jié)果。
[Abstract]:Space station, satellite and other spaceflight equipments will be affected by reliability effect and total dose radiation effect for a long time in space environment.In this paper, the reliability effect, radiation effect and the interaction between them are analyzed.The relationship between the total dose radiation effect and the hot carrier effect of NMOS devices in nanoscale process is studied.The effects of the two effects on the electrical parameters of the devices are simulated by using Sentaurus-TCAD software, and the correlation between the two effects is simulated.The main work is as follows: (1) the mechanism of total dose radiation effect on MOS nanoscale devices is studied.The 65nm NMOS device model is established by using Sentaurus TCAD software, and the variation of leakage current is simulated under different dosages.The simulation results show that when the dose reaches 500krad,The leakage current of the device was increased from 1.68E-09A to 8.76E-07A by two orders of magnitude.) the mechanism of hot carrier injection effect on MOS nanoscale devices and the model of predicting lifetime of hot carrier effect were studied.The variation of the parameters of 65nm NMOS devices with time under the hot carrier injection effect is simulated by using Sentaurus TCAD software.The simulation results show that when the stress bias is Vgs=Vds=2V and the acceleration stress time is 105 s, the saturation leakage current of the device increases by 6 parts.According to the power relation between the parameters of the device and the time, the power exponent of the device and the time is calculated to be 0.39. 3) the possible correlation between the two effects is studied. The total dose effect leads to the increase of electron concentration in the channel.In nanodevices, the increase of channel concentration will lead to a large number of electron scattering phenomenon in the channel. The scattering probability is positively correlated with the channel electron concentration, thus exacerbating the channel hot carrier phenomenon.So the result of the two will not be the result of simple superposition.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN386.1

【參考文獻】

相關(guān)期刊論文 前5條

1 楊變霞;李平;劉洋;;NMOS晶體管的總劑量輻射效應(yīng)仿真[J];固體電子學(xué)研究與進展;2015年02期

2 吳雪;陸嫵;王信;郭旗;張興堯;于新;;0.18μm MOS差分對管總劑量失配效應(yīng)研究[J];原子能科學(xué)技術(shù);2014年10期

3 陳偉華;杜磊;莊奕琪;包軍林;何亮;張?zhí)旄?張雪;;MOS結(jié)構(gòu)電離輻射效應(yīng)模型研究[J];物理學(xué)報;2009年06期

4 李桃生;陳軍;王志強;;空間輻射環(huán)境概述[J];輻射防護通訊;2008年02期

5 郭紅霞,張義門,陳雨生,周輝,龔仁喜,何寶平,關(guān)穎,韓福斌,龔建成;MOS器件輻照引入的界面態(tài)陷阱性質(zhì)[J];固體電子學(xué)研究與進展;2003年02期

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