本文選題：總劑量輻射效應 + 熱載流子注入效應��； 參考：《西安電子科技大學》2015年碩士論文

【摘要】：空間站、人造衛(wèi)星等航天設備在空間環(huán)境中,會長期受到可靠性效應和總劑量輻射效應的影響。本文針對宇航環(huán)境中存在的可靠性效應和輻射效應以及兩者之間相互的影響進行了分析。重點研究了納米尺寸工藝下NMOS器件的總劑量輻射效應和熱載流子效應的關聯(lián)性。使用Sentaurus-TCAD軟件分別仿真分析了兩種效應對器件電學參數(shù)的影響,并在此基礎上對二者的關聯(lián)性做了仿真嘗試。具體工作內(nèi)容如下:(1)研究了總劑量輻射效應對MOS納米尺寸器件的作用機理。使用Sentaurus TCAD軟件建立了65nm NMOS器件模型,仿真了在不同的劑量條件下,器件的泄露電流的變化。仿真分析結果顯示,當劑量達到500krad的條件下,器件的泄露電流從1.68E-09A增加至8.76E-07A,增加了兩個數(shù)量級。(2)研究了熱載流子注入效應對MOS納米尺寸器件的作用機理以及熱載流子效應預估壽命的模型。使用Sentaurus TCAD軟件仿真了65nm NMOS器件在熱載流子注入效應下參數(shù)隨時間的變化情況。仿真結果顯示,在應力偏置為Vgs=Vds=2V的條件下,加速應力時間為105s之后,該器件的飽和漏電流增加了6%。根據(jù)器件的參數(shù)變化與時間呈冪率關系,推算出其與時間的冪率指數(shù)為0.39。(3)研究了兩種效應之間可能存在的關聯(lián)性,由于總劑量效應導致了溝道中電子濃度的增加,而在納米器件下,溝道濃度的增加會引起溝道中出現(xiàn)大量的電子電子散射現(xiàn)象,散射幾率與溝道的電子濃度呈現(xiàn)正相關,從而加劇了溝道熱載流子現(xiàn)象。所以二者的結果不會是簡單疊加的結果。
[Abstract]:Space station, satellite and other spaceflight equipments will be affected by reliability effect and total dose radiation effect for a long time in space environment.In this paper, the reliability effect, radiation effect and the interaction between them are analyzed.The relationship between the total dose radiation effect and the hot carrier effect of NMOS devices in nanoscale process is studied.The effects of the two effects on the electrical parameters of the devices are simulated by using Sentaurus-TCAD software, and the correlation between the two effects is simulated.The main work is as follows: (1) the mechanism of total dose radiation effect on MOS nanoscale devices is studied.The 65nm NMOS device model is established by using Sentaurus TCAD software, and the variation of leakage current is simulated under different dosages.The simulation results show that when the dose reaches 500krad,The leakage current of the device was increased from 1.68E-09A to 8.76E-07A by two orders of magnitude.) the mechanism of hot carrier injection effect on MOS nanoscale devices and the model of predicting lifetime of hot carrier effect were studied.The variation of the parameters of 65nm NMOS devices with time under the hot carrier injection effect is simulated by using Sentaurus TCAD software.The simulation results show that when the stress bias is Vgs=Vds=2V and the acceleration stress time is 105 s, the saturation leakage current of the device increases by 6 parts.According to the power relation between the parameters of the device and the time, the power exponent of the device and the time is calculated to be 0.39. 3) the possible correlation between the two effects is studied. The total dose effect leads to the increase of electron concentration in the channel.In nanodevices, the increase of channel concentration will lead to a large number of electron scattering phenomenon in the channel. The scattering probability is positively correlated with the channel electron concentration, thus exacerbating the channel hot carrier phenomenon.So the result of the two will not be the result of simple superposition.
【學位授予單位】：西安電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN386.1

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本文編號：1760606