發(fā)布時間：2018-04-16 20:57

  本文選題：氮化鎵 + 紫外探測器��； 參考：《江南大學(xué)》2015年碩士論文

【摘要】：III族氮化物半導(dǎo)體氮化鎵(Ga N)具有寬禁帶、直接帶隙、熱穩(wěn)定性和化學(xué)穩(wěn)定性高等優(yōu)勢,是制備紫外探測器的理想材料。Ga N基紫外探測器具有能耗低、體積小、抗輻射能力強等優(yōu)點,在軍民領(lǐng)域都具有重要的應(yīng)用價值,已成為Ga N基光電器件研究的一個熱點方向。但是,由于Ga N材料缺乏高質(zhì)量的同質(zhì)單晶襯底,而異質(zhì)外延的Ga N中又常常存在高密度位錯等結(jié)構(gòu)缺陷,嚴重限制了高性能Ga N基紫外探測器的開發(fā)和應(yīng)用。尋找能有效降低Ga N外延層缺陷密度的方法,對提高器件的性能有重要的意義。論文首先回顧了Ga N基紫外探測器的研究現(xiàn)狀,指出了存在的問題,然后介紹了Ga N材料的基本性質(zhì)和制備方法,詳細描述了幾種常用Ga N基紫外探測器的結(jié)構(gòu)和工作原理,以及表征探測器性能的主要參數(shù)。在此基礎(chǔ)上,開展了下述三部分的研究工作。1、為了降低Ga N材料中的缺陷密度,提高外延層的質(zhì)量,在圖形化藍寶石襯底(patterned sapphire substrate,PSS)上制備了薄p型層厚度(60 nm)的Ga N基p-i-n型紫外探測器。X光衍射結(jié)果表明,與生長在標(biāo)準(zhǔn)藍寶石襯底上的外延層相比,生長在PSS上的外延層具有更低的缺陷密度。另外,為方便比較探測器的性能,還在PSS上制備了Ga N基的肖特基型紫外探測器。2、為了評價探測器的性能,設(shè)計并搭建了一套光譜響應(yīng)測試系統(tǒng)。為滿足測試精度的要求,對系統(tǒng)存在的噪聲問題進行了分析、排除,包括將環(huán)形燈的開關(guān)移至屏蔽箱外,替換源表與探針之間的連接線,將探針臺、屏蔽箱與源表接同一個地,優(yōu)化后整個系統(tǒng)的噪聲降到10-12數(shù)量級,可滿足測試的需求。另外,還研究了光譜系統(tǒng)的光功率問題,即當(dāng)光傳至測試器件時,光衰減嚴重、器件的光響應(yīng)不明顯的問題。通過使用紫外光纖,并采用萬向磁力座使光纖盡可能地靠近器件,有效降低了光功率的衰減,為探測器的性能分析提供了滿意的測試平臺。3、對制備的Ga N基紫外探測器進行了性能測試和分析。結(jié)果表明,PSS上薄p型層的p-i-n型探測器具有較低的暗電流,在深紫外波段也保持著良好的量子效率。將其與肖特基型探測器進行比較,發(fā)現(xiàn)兩者的性能基本相當(dāng)。但是,肖特基型探測器的器件面積較大,所以其暗電流比p-i-n型的高。在實際應(yīng)用中,肖特基型紫外探測器容易受耗盡區(qū)寬度和勢壘高度的限制,p-i-n型紫外探測器在抑制暗電流方面更有優(yōu)勢。
[Abstract]:III nitride semiconductor gallium nitride (gan) has the advantages of wide band gap, direct band gap, high thermal and chemical stability, etc. It is an ideal material for preparing UV detector with low energy consumption and small volume.Because of its strong anti-radiation ability, it has important application value in military and civilian fields, and has become a hot research direction in the research of gan based optoelectronic devices.However, due to the lack of high quality homogeneous single crystal substrates in gan materials, and the structural defects such as high density dislocations in heteroepitaxial gan, the development and application of high performance gan based UV detectors are seriously restricted.It is very important to find a method to reduce the defect density of gan epitaxial layer.Firstly, this paper reviews the research status of gan based UV detectors, points out the existing problems, then introduces the basic properties and preparation methods of gan materials, and describes in detail the structure and working principle of several commonly used gan based UV detectors.And the main parameters to characterize the performance of the detector.In order to reduce the defect density in gan material and improve the quality of epitaxial layer, the following three parts of research work have been carried out in order to reduce the defect density and improve the quality of the epitaxial layer.Gan based p-i-n UV detectors were fabricated on patterned sapphire substratePSS on patterned sapphire substrates. The results of X-ray diffraction show that compared with the epitaxial layers grown on standard sapphire substrates, gan based p-i-n UV detectors with a thickness of 60 nm have been prepared.The epitaxial layer grown on PSS has lower defect density.In addition, in order to compare the performance of the detector, the Schottky type UV detector of gan base was fabricated on PSS. In order to evaluate the performance of the detector, a spectrum response testing system was designed and built.In order to meet the requirements of testing accuracy, the noise problems in the system are analyzed and eliminated, including moving the switch of the ring lamp outside the shield box, replacing the connection line between the source table and the probe, connecting the probe table, shielding box and source meter to the same place.After optimization, the noise of the whole system is reduced to 10-12 order of magnitude, which can meet the requirements of the test.In addition, the optical power problem of the spectral system is studied, that is, when the light is transmitted to the test device, the optical attenuation is serious and the optical response of the device is not obvious.By using ultraviolet fiber and universal magnetic pedestal to make the optical fiber as close as possible to the device, the attenuation of optical power is effectively reduced.A satisfactory testing platform. 3 is provided for the performance analysis of the detector. The performance of the prepared gan based UV detector is tested and analyzed.The results show that the thin p-type p-i-n detector has low dark current and good quantum efficiency in the deep ultraviolet band.Compared with Schottky detector, it is found that the performance of the two is basically the same.However, the Schottky detector has a larger area, so its dark current is higher than that of p-i-n.In practical application, Schottky type UV detector is easy to be limited by depletion zone width and barrier height. The p-i-n type UV detector has more advantages in suppressing dark current.
【學(xué)位授予單位】：江南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN23

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