本文選題：共振隧穿二極管 + GaAs/AlGa��； 參考：《杭州電子科技大學(xué)》2015年碩士論文

【摘要】：RTD(Resonant Tunneling Diode)是一種具有微分負(fù)阻效應(yīng)的納米器件,具有負(fù)阻、雙穩(wěn)自鎖、高頻高速、低壓低功耗等特性。目前關(guān)于RTD在集成電路領(lǐng)域應(yīng)用已投入了大量的研究,并已經(jīng)取得了一些應(yīng)用成果。隨著MBE(分子束外延)、MOCVD(金屬有機(jī)物化學(xué)氣相淀積)等精密生長(zhǎng)技術(shù)的發(fā)展,RTD已經(jīng)成為了率先投入生產(chǎn)的納米量子器件之一。但由于國(guó)內(nèi)對(duì)RTD理論和應(yīng)用的研究還比較欠缺,工藝上原子級(jí)精度的集成外延控制技術(shù)還有待改善,使得制造出的RTD性能不是很理想。本文以GaAs基RTD為研究對(duì)象,首先概述了RTD的國(guó)內(nèi)外研究現(xiàn)狀,比較詳細(xì)的探討了其電流傳輸機(jī)理,并建立了GaAs基器件結(jié)構(gòu)和物理機(jī)理的電學(xué)特性數(shù)學(xué)模型;在此基礎(chǔ)上初步設(shè)計(jì)了比較合理的GaAs基RTD器件結(jié)構(gòu);使用SILVACO公司的器件仿真軟件Atlas對(duì)此結(jié)構(gòu)進(jìn)行了器件的電學(xué)特性仿真,研究透射系數(shù)與外加偏壓以及材料結(jié)構(gòu)參數(shù)之間的關(guān)系,NDR(微分負(fù)阻特性)隨材料結(jié)構(gòu)參數(shù)(主要包括勢(shì)壘寬度、勢(shì)阱寬度以及集電極和發(fā)射極摻雜濃度等)以及勢(shì)壘高度等的變化規(guī)律。通過理論計(jì)算和仿真優(yōu)化,初步總結(jié)了對(duì)稱DBS(雙勢(shì)壘單勢(shì)阱)RTD中適合低壓低功耗的多值邏輯電路應(yīng)用的比較的合理的材料結(jié)構(gòu)參數(shù)。為了降低RTD的峰、谷值電壓和非共振隧穿電流,更好的應(yīng)用于多值邏輯電路中,本文提出了一種改進(jìn)方法,主要是采用非對(duì)稱雙勢(shì)壘RTD結(jié)構(gòu),通過改變非對(duì)稱RTD勢(shì)壘高度和勢(shì)壘寬度,在反向偏壓下實(shí)現(xiàn)提高透射系數(shù),進(jìn)一步降低峰值電壓和非共振隧穿電流。并最終提出采用GaAs/AlGa As基雙勢(shì)壘RTD實(shí)現(xiàn)多值邏輯電路設(shè)計(jì)所需的材料參數(shù)。
[Abstract]:RTD(Resonant Tunneling Diode is a kind of nano-device with differential negative resistance effect. It has the characteristics of negative resistance, bistable self-locking, high frequency and high speed, low power consumption and so on.At present, a lot of researches have been devoted to the application of RTD in the field of integrated circuits, and some application results have been obtained.With the development of MBE (Molecular Beam Epitaxy (MBE) MOCVD (Metal Organic Chemical Vapor deposition) and other precise growth techniques, RTD has become one of the first nanoscale quantum devices in production.However, due to the lack of domestic research on the theory and application of RTD, the integrated epitaxial control technology of atom-level precision still needs to be improved, which makes the RTD performance not ideal.In this paper, GaAs based RTD is taken as the research object. Firstly, the research status of RTD at home and abroad is summarized, the mechanism of current transmission is discussed in detail, and the mathematical model of electrical characteristics of GaAs based device structure and physical mechanism is established.On this basis, a reasonable GaAs based RTD device structure is designed preliminarily, and the electrical characteristics of the structure are simulated by using the device simulation software Atlas of SILVACO Company.The relationship between transmission coefficient, applied bias voltage and structural parameters of materials is studied. NDR (differential negative resistance characteristic) depends on the structural parameters of materials (including the width of potential barrier).The variation of potential well width, collector and emitter doping concentration, and barrier height.Through theoretical calculation and simulation optimization, reasonable material structure parameters of symmetrical DBS (double barrier single well RTD) for low voltage and low power consumption multivalued logic circuits are preliminarily summarized.In order to reduce the peak and valley voltage and non-resonant tunneling current of RTD, and to be better applied in multi-valued logic circuits, an improved method is proposed in this paper, which mainly adopts asymmetric double-barrier RTD structure.By changing the height and width of asymmetric RTD barrier, the transmission coefficient can be increased under reverse bias voltage, and the peak voltage and non-resonant tunneling current can be further reduced.Finally, the material parameters needed for the design of multivalued logic circuits using GaAs/AlGa as base double barrier RTD are proposed.
【學(xué)位授予單位】：杭州電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.1;TN304

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