本文選題：雪崩紫外探測(cè)器 + SAM結(jié)構(gòu)��； 參考：《西安電子科技大學(xué)》2015年碩士論文

【摘要】：紫外探測(cè)技術(shù)被廣泛應(yīng)用于生化檢測(cè)、可燃性氣體尾焰探測(cè)及導(dǎo)彈羽煙探測(cè)等紫外輻射探測(cè)等領(lǐng)域。由于4H-SiC具有寬帶隙的特點(diǎn),用其制備的紫外光電探測(cè)器具有日盲特性。在紫外探測(cè)器領(lǐng)域,常規(guī)的劑量型紫外探測(cè)器已經(jīng)趨于成熟,目前的難點(diǎn)是如何探測(cè)弱紫外以及單光子探測(cè)。在弱光探測(cè)中,探測(cè)器的內(nèi)部增益十分重要,固體紫外探測(cè)器依靠雪崩倍增來實(shí)現(xiàn)對(duì)弱紫外信號(hào)的放大,工作在蓋格模式的碳化硅雪崩紫外探測(cè)器增益可以達(dá)到106,達(dá)到與光電倍增管相當(dāng)?shù)脑鲆嫠健Ｌ蓟璺蛛x吸收倍增層雪崩紫外探測(cè)器具有暗電流低,增益高,工作電壓低的優(yōu)點(diǎn)。本文研究了4H-SiC分離吸收倍增雪崩紫外探測(cè)器的工作機(jī)理,建立了兩種不同吸收倍增層的SAM結(jié)構(gòu)雪崩紫外探測(cè)器,通過仿真,研究了兩種不同結(jié)構(gòu)的SAM結(jié)構(gòu)雪崩紫外探測(cè)器的反偏I(xiàn)V特性,研究n型吸收倍增層結(jié)構(gòu)分離吸收倍增層雪崩紫外探測(cè)器在不同偏壓下雪崩紫外探測(cè)器的光譜響應(yīng)曲線,分析了不同偏壓下的量子效率隨波長(zhǎng)的變化,仿真研究了器件的瞬態(tài)特性。建立了兩種斜角臺(tái)面結(jié)構(gòu):正斜角臺(tái)面和負(fù)斜角臺(tái)面結(jié)構(gòu),在此基礎(chǔ)上,仿真分析了正臺(tái)面和負(fù)臺(tái)面對(duì)器件特性的影響。并得出如下結(jié)論:n型吸收倍增層要優(yōu)于p型吸收倍增層。4H-SiC分離吸收倍增紫外探測(cè)器具有極低的暗電流和明顯的光電流響應(yīng);偏置電壓對(duì)雪崩紫外探測(cè)器的響應(yīng)度影響很大,響應(yīng)度隨偏壓一開始線性增加,隨后在到達(dá)雪崩擊穿電壓附近,響應(yīng)度劇增;負(fù)臺(tái)面會(huì)在器件邊緣形成一個(gè)峰值電場(chǎng),該峰值電場(chǎng)會(huì)造成擊穿電壓的降低,擊穿電壓隨臺(tái)面角度的減小是先減小后增大的關(guān)系;正臺(tái)面可以降低器件的暗電流,但降低程度有限,不會(huì)超過一個(gè)量級(jí),并且當(dāng)臺(tái)面角度很極端時(shí),暗電流的降低才會(huì)明顯。此外,本文還給出了斜角臺(tái)面的實(shí)現(xiàn)方法。本文研究了分離吸收倍增層紫外探測(cè)器的工作機(jī)理,建立了n型吸收倍增層和p型吸收倍增層結(jié)構(gòu),仿真比較了n型吸收倍增層和p型吸收倍增層的暗電流特性。仿真研究了n型吸收倍增層的光暗電流以及不同偏壓下的光譜響應(yīng)曲線和量子效率曲線和瞬態(tài)特性。介紹了正斜角臺(tái)面和負(fù)斜角臺(tái)面,通過仿真分析研究了正斜角臺(tái)面結(jié)構(gòu)和負(fù)斜角臺(tái)面對(duì)器件暗電流以及擊穿電壓的影響,給出了斜角臺(tái)面的實(shí)現(xiàn)方法。這為以后雪崩紫外探測(cè)器的研制提供理論指導(dǎo),為器件結(jié)構(gòu)的設(shè)計(jì)提供借鑒。
[Abstract]:Ultraviolet detection technology is widely used in biochemical detection, combustible gas tail flame detection, missile plume detection and other areas of ultraviolet radiation detection.Because of the wide band gap of 4H-SiC, the UV photodetector prepared by 4H-SiC has the characteristics of solar blindness.In the field of ultraviolet detectors, the conventional dose type ultraviolet detectors have become mature. At present, the difficulty is how to detect weak ultraviolet and single photon detection.In weak light detection, the internal gain of the detector is very important. The solid ultraviolet detector relies on avalanche multiplication to amplify the weak ultraviolet signal.The gain of silicon carbide avalanche UV detector working in Gage mode can reach 106, which is equivalent to the gain level of photomultiplier tube.Silicon carbide separated absorption layer avalanche UV detector has the advantages of low dark current, high gain and low operating voltage.In this paper, the working mechanism of 4H-SiC separation and absorption double avalanche ultraviolet detector is studied. Two kinds of SAM structure ultraviolet detectors with different absorption and multiplication layers are established.The inverse bias IV characteristics of two different structures of SAM structure avalanche UV detectors are studied. The spectral response curves of n-type absorption-multiplicative layer structure separated absorption multiplication layer avalanche ultraviolet detectors under different bias voltages are studied.The variation of quantum efficiency with wavelength at different bias voltages is analyzed and the transient characteristics of the devices are simulated.Two kinds of diagonal Mesa structures, positive and negative, are established. Based on these, the effects of positive and negative countertops on the device characteristics are simulated and analyzed.It is concluded that: n absorption multiplication layer is superior to p type absorption multiplication layer. 4H-SiC separation absorption multiplication ultraviolet detector has very low dark current and obvious photocurrent response, and bias voltage has great influence on the response of avalanche ultraviolet detector.The responsivity increases linearly with the bias voltage, then increases dramatically near the avalanche breakdown voltage, and a peak electric field is formed at the edge of the device, which causes the breakdown voltage to decrease.The breakdown voltage decreases first and then increases with the decrease of the angle of the Mesa, and the reduction of the dark current of the device is limited to a limited extent, which is not more than one order of magnitude, and the decrease of the dark current is obvious when the angle of the Mesa is very extreme.In addition, the realization method of diagonal table is also given in this paper.In this paper, the working mechanism of UV detector with separated absorption and multiplication layer is studied. The structure of n-type absorption multiplication layer and p-type absorption multiplication layer are established, and the dark current characteristics of n-type absorption multiplier layer and p-type absorption multiplication layer are simulated and compared.The spectral response curves, quantum efficiency curves and transient characteristics of n-type absorption and multiplication layers under different bias voltages are studied by simulation.The positive and negative angle table are introduced. The structure of the positive diagonal table and the influence of the negative diagonal table on the device dark current and breakdown voltage are studied by simulation, and the realization method of the oblique angle table is given.This provides theoretical guidance for the future development of avalanche UV detector and provides reference for the design of device structure.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN23

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本文編號(hào)：1740831