發(fā)布時(shí)間：2018-04-11 04:20

  本文選題：吡咯并吡咯二酮 + 有機(jī)場效應(yīng)晶體管　； 參考：《延邊大學(xué)》2015年碩士論文

【摘要】：DPP(2,5-dihydropyrrolo [3,4-c] pyrrole-1,4-dione,咯并吡咯二酮)是構(gòu)建OFETs(有機(jī)場效應(yīng)晶體管)有機(jī)半導(dǎo)體材料的優(yōu)選骨架,尤其是基于DPP(Th)2的高性能半導(dǎo)體材料越來越受到人們的關(guān)注。本文選擇在DPP(Th)2外并入苯甲醛作為關(guān)鍵中間體,合成了兩類新型D-A型DPP衍生物。希望苯和雙鍵的引入能夠有效地延長共軛,在不破壞分子平面性的前提下增強(qiáng)分子間的相互作用；另外,為了增強(qiáng)化合物的溶解度,連接了烷基側(cè)鏈。我們依次進(jìn)行了熱穩(wěn)定性、光物理性質(zhì)、電化學(xué)性質(zhì)的研究,并對(duì)兩種材料的OFETs性質(zhì)進(jìn)行了測試,最后利用XRD和AFM測試對(duì)電荷傳輸行為進(jìn)行了驗(yàn)證。論文的主要工作分為以下兩個(gè)方面：一、首先我們引入二腈基乙烯基合成了化合物TM1。計(jì)算得到了它的HOMO/LUMO能級(jí)和能隙分別為-5.36 eV、-3.81 eV和1.55 eV。OFETs性質(zhì)測試發(fā)現(xiàn),半導(dǎo)體TMl表現(xiàn)出了很好的雙極型傳輸行為并具有良好的環(huán)境穩(wěn)定性,電子遷移率(μe)和空穴遷移率(μh)在120℃退火后達(dá)到最大,分別為0.1680cm2V-1s-1和0.0154 cm2V-1s-1。XRD測試發(fā)現(xiàn),化合物TM1呈層狀堆積,根據(jù)第一個(gè)衍射峰計(jì)算得到層間距為22.1A。 AFM的測試中,90℃退火后化合物TM1薄膜呈現(xiàn)出連續(xù)的晶區(qū),120℃退火后薄膜有序度和形貌都沒有明顯的變化。另外,考慮到烷基鏈與OTS的兼容性,化合物分子可能更加趨向于沿著烷基鏈方向采取edge-on的排列方式。二、我們引入連有不同取代基的二硫富瓦烯基團(tuán),合成了化合物TM2-TM4。計(jì)算得到它們的能級(jí)和能隙,其中化合物TM3具有最低的分子能級(jí)(HOMO-4.99 eV; LUMO=-3.77 eV; EgCV=1.22 eV),化合物TM4在三者之中最大(HOMO=-4.92 eV; LUMO=-3.63 eV; EgCB=1.29 eV)。OFETs性質(zhì)測試中,三個(gè)化合物都只表現(xiàn)出p型半導(dǎo)體材料的性質(zhì),并在100℃退火后達(dá)到最好。其中表現(xiàn)出最高空穴遷移率(μh)的是化合物TM3,為7.9×10-4cm2V-1s-1;化合物TM4的性能最差,為9.3×10-5cm2V-1s-1。最后利用XRD和AFM對(duì)三個(gè)化合物薄膜的堆積結(jié)構(gòu)和形貌進(jìn)行了表征,發(fā)現(xiàn)化合物TM3的排列更加緊密,而且在100℃退火后薄膜表面變得更為平整。
[Abstract]:Dihydropyrrolo [3ON4-c] pyrrole-1 + 4-dione, pyrrole-1, pyrrolidinone) is an excellent framework for the construction of organic semiconductor materials with field effect transistors (OFETs), especially the high performance semiconductor materials based on DPP(Th)2.In this paper, two new D-A derivatives of DPP were synthesized by incorporation of benzaldehyde outside DPP(Th)2 as the key intermediates.It is hoped that the introduction of benzene and double bonds can effectively prolong the conjugation and enhance the intermolecular interaction without destroying the molecular planarity. In addition, in order to enhance the solubility of the compounds, alkyl side chains are connected.The thermal stability, photophysical and electrochemical properties of the two materials were studied in turn, and the OFETs properties of the two materials were tested. Finally, the charge-transport behavior was verified by XRD and AFM tests.The main work of this paper is as follows: firstly, we introduce dinitrile vinyl group to synthesize TM1.The HOMO/LUMO energy level and energy gap of the semiconductor TMl are -5.36 EV ~ 3.81 EV and 1.55 eV.OFETs, respectively. It is found that the semiconductor TMl has a good bipolar transport behavior and good environmental stability.The electron mobility (渭 e) and hole mobility (渭 h) were the highest after annealing at 120 鈩，

本文編號(hào)：1734409