本文選題：有機(jī)場(chǎng)效應(yīng)晶體管　切入點(diǎn)：界面修飾　出處：《南京郵電大學(xué)》2015年碩士論文

【摘要】：隨著電子信息時(shí)代的迅猛發(fā)展,有機(jī)場(chǎng)效應(yīng)晶體管(OFET)作為有機(jī)電子元器件的重要組成部分,其發(fā)展速度也不容小覷。它可以被廣泛應(yīng)用于存儲(chǔ)器、電子開關(guān)、射頻標(biāo)簽、電子書等領(lǐng)域,因此對(duì)于有機(jī)場(chǎng)效應(yīng)晶體管的性能需求越來越高。為了滿足對(duì)高性能有機(jī)場(chǎng)效應(yīng)晶體管的需要,制備高質(zhì)量的OFET將成為一項(xiàng)長(zhǎng)期并且必要的任務(wù)。本文研究了其器件結(jié)構(gòu)與工作原理以及電學(xué)特性的表征方法,決定根據(jù)器件結(jié)構(gòu),針對(duì)場(chǎng)效應(yīng)晶體管的兩個(gè)重要界面進(jìn)行優(yōu)化,設(shè)計(jì)了多種修飾方案,制備器件,通過測(cè)量其電學(xué)性質(zhì)驗(yàn)證修飾效果,具體研究?jī)?nèi)容為:首先,我們采用了十八烷基硅烷(OTS)對(duì)二氧化硅絕緣層進(jìn)行自組裝單層修飾,還有聚甲基丙烯酸甲酯(PMMA)修飾二氧化硅表面,兩者都取得了較好的修飾效果,器件遷移率提高了一個(gè)數(shù)量級(jí)。除此之外,還利用組內(nèi)自己合成的硫醇材料修飾器件的源漏電極(金電極),器件的電學(xué)性質(zhì)也有了一定的提高,通過測(cè)算電極與半導(dǎo)體間的接觸電阻,驗(yàn)證了加入修飾材料后有效降低了接觸電阻從而提高了器件性能。其次,我們探究了不同的退火方式對(duì)器件性能的影響。采用了幾種較為常用的修飾材料同時(shí)進(jìn)行快速退火與慢速退火的對(duì)比,得出普遍快速退火更有助于載流子的傳輸?shù)慕Y(jié)論,并且通過原子力顯微鏡圖像(AFM)、X-射線衍射(XRD)、接觸角測(cè)量的方法進(jìn)行具體分析,發(fā)現(xiàn)快速退火更有助于半導(dǎo)體層并五苯的結(jié)晶以及粒子的分布,這是導(dǎo)致其性能較高的本質(zhì)原因。最后,我們還設(shè)計(jì)了一種雙層聚合物修飾絕緣層的結(jié)構(gòu),采用PMMA與交聯(lián)聚(4-乙基苯酚)(PVP)兩種不同的聚合物修飾二氧化硅(SiO2)絕緣層,從而使其遷移率達(dá)到1cm2/Vs。除了高遷移率之外,這一器件還具備較好的空氣穩(wěn)定性。我們通過對(duì)結(jié)構(gòu)的進(jìn)一步優(yōu)化,找到了最佳匹配濃度,同樣通過AFM、XRD、接觸角測(cè)量的方法分析,探究最佳濃度與結(jié)構(gòu)上并五苯的生長(zhǎng)形貌與結(jié)晶度,得出在這一條件下粒子最大,結(jié)晶度也相對(duì)最高,較低表面能的介電層更有助于并五苯生長(zhǎng)以及器件在空氣中的穩(wěn)定存在。
[Abstract]:With the rapid development of the electronic information age, the airport effect transistor (OFET) as an important part of organic electronic components, its development speed can not be underestimated.It can be widely used in memory, electronic switches, radio frequency tags, e-books and so on.In order to meet the needs of high performance airfield effect transistors, the preparation of high quality OFET will become a long-term and necessary task.In this paper, the structure and working principle of the device and the characterization method of the electrical properties are studied. According to the structure of the device and the optimization of the two important interfaces of the FET, a variety of modification schemes are designed to fabricate the device.The effect of the modification was verified by measuring its electrical properties. Firstly, we used octadecyl silane (OTS) to modify the insulating layer of silica by self-assembled monolayer, and polymethyl methacrylate (PMMA) was used to modify the surface of silica.Both of them achieved good modification effect and the mobility of the device increased by an order of magnitude.In addition, the source and leakage electrodes (gold electrodes, electrical properties of the devices) modified by thiol materials in the group have also been improved, and the contact resistance between the electrodes and semiconductors has been measured.It is verified that the contact resistance is reduced effectively and the performance of the device is improved by adding the modified material.Secondly, we investigate the effect of different annealing methods on the device performance.The comparison of rapid annealing and slow annealing with several common modified materials is carried out. It is concluded that universal rapid annealing is more helpful to carrier transport.By AFM image and contact angle measurement, it is found that rapid annealing is more helpful to the crystallization of semiconductor layer and the distribution of particles, which is the essential reason for its high performance.Finally, we have designed a double-layer polymer modified insulating layer, which is modified with PMMA and cross-linked poly (4-ethylphenol) as the insulator of SiO2 / SiO2. The mobility of the insulator is up to 1 cm ~ 2 / V _ (2).In addition to high mobility, this device also has good air stability.Through further optimization of the structure, we find the best matching concentration. Also, by means of AFMX RD and contact angle measurement, we find out the growth morphology and crystallinity of pentabenzene in the optimum concentration and structure, and get the maximum particle size under this condition.The crystallinity is also relatively high, and the dielectric layer with lower surface energy is more conducive to the growth of pentabenzene and the stable existence of the device in air.
【學(xué)位授予單位】：南京郵電大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN386

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